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Area-Selective Atomic Layer Deposition of In 2 O 3 :H Using a μ -Plasma Printer for Local AreaActivation

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It was also verified that the area-selective processing does not of the In2O3:H ALD process is stemming from interactions were also accounted for on an empirical basis... Additional computational details can be found corresponding energies obtained by the DFT calculations... The results surfaces of H-terminated silicon materials... In conclusion, a surfaces of silicon materials by a μ-plasma printer and AS-ALD both the μ-plasma printing and the AS-ALD process are scalable... on flexible substrates combined with spatial ALD processes will be investigations using a focused electron beam have yielded promising results with respect to the extension of the current direct-write ALD process of In2O3:H toward nanoscale dimensions.

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Energy profilescomputed by DFT method (PBE-D3) for the chemisorptionof InCp on (a) hydrogenated silicon (Si–H termination) and(b) on hydroxylated silicon oxide (Si–OH termination).
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fig5: Energy profilescomputed by DFT method (PBE-D3) for the chemisorptionof InCp on (a) hydrogenated silicon (Si–H termination) and(b) on hydroxylated silicon oxide (Si–OH termination).

Mentions: Figure 5 showsthecorresponding energies obtained by the DFT calculations. The resultsreveal that Reaction 1 is endothermic and requires an energy input of 0.31 eV to proceed,with associated activation energy of 0.36 eV. For Reaction 2, the activation energy of0.28 eV is slightly lower, and in contrast to Reaction 1, the overall process is exothermic.


Area-Selective Atomic Layer Deposition of In 2 O 3 :H Using a μ -Plasma Printer for Local AreaActivation
Energy profilescomputed by DFT method (PBE-D3) for the chemisorptionof InCp on (a) hydrogenated silicon (Si–H termination) and(b) on hydroxylated silicon oxide (Si–OH termination).
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC5384477&req=5

fig5: Energy profilescomputed by DFT method (PBE-D3) for the chemisorptionof InCp on (a) hydrogenated silicon (Si–H termination) and(b) on hydroxylated silicon oxide (Si–OH termination).
Mentions: Figure 5 showsthecorresponding energies obtained by the DFT calculations. The resultsreveal that Reaction 1 is endothermic and requires an energy input of 0.31 eV to proceed,with associated activation energy of 0.36 eV. For Reaction 2, the activation energy of0.28 eV is slightly lower, and in contrast to Reaction 1, the overall process is exothermic.

View Article: PubMed Central - PubMed

AUTOMATICALLY GENERATED EXCERPT
Please rate it.

It was also verified that the area-selective processing does not of the In2O3:H ALD process is stemming from interactions were also accounted for on an empirical basis... Additional computational details can be found corresponding energies obtained by the DFT calculations... The results surfaces of H-terminated silicon materials... In conclusion, a surfaces of silicon materials by a μ-plasma printer and AS-ALD both the μ-plasma printing and the AS-ALD process are scalable... on flexible substrates combined with spatial ALD processes will be investigations using a focused electron beam have yielded promising results with respect to the extension of the current direct-write ALD process of In2O3:H toward nanoscale dimensions.

No MeSH data available.