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Area-Selective Atomic Layer Deposition of In 2 O 3 :H Using a μ -Plasma Printer for Local AreaActivation

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It was also verified that the area-selective processing does not of the In2O3:H ALD process is stemming from interactions were also accounted for on an empirical basis... Additional computational details can be found corresponding energies obtained by the DFT calculations... The results surfaces of H-terminated silicon materials... In conclusion, a surfaces of silicon materials by a μ-plasma printer and AS-ALD both the μ-plasma printing and the AS-ALD process are scalable... on flexible substrates combined with spatial ALD processes will be investigations using a focused electron beam have yielded promising results with respect to the extension of the current direct-write ALD process of In2O3:H toward nanoscale dimensions.

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Film thickness measured by in situ SE as a functionof the In2O3:H ALD cycles on SiO2 (open triangles)and on a-Si:H (open circles). Ex situ SE measurements were taken onlyfor 600 and 780 ALD cycles on a-Si:H. Above 600 ALD cycles the selectivityof the process appears to degrade.
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fig4: Film thickness measured by in situ SE as a functionof the In2O3:H ALD cycles on SiO2 (open triangles)and on a-Si:H (open circles). Ex situ SE measurements were taken onlyfor 600 and 780 ALD cycles on a-Si:H. Above 600 ALD cycles the selectivityof the process appears to degrade.

Mentions: As mentioned at thebeginning of this communication, the selectivityof the In2O3:H ALD process is stemming fromthe fact that very long nucleation delays are obtained on H-terminatedsurfaces of silicon materials whereas the nucleation delay on oxidesurfaces is considerably shorter as shown in Figure 4.25 To elucidatethe role of the surface groups during ALD of In2O3:H, first-principle calculations have been carried out using densityfunctional theory (DFT)29,30 with the Perdew–Burke–Ernzerhof(PBE) exchange correlation functional.31,32 van der Waalsinteractions were also accounted for on an empirical basis.33 Additional computational details can be foundin the Supporting Information Section 1.4.The structures and associated relative energies have been calculatedfor the stationary points along the anticipated reaction pathwaysfor the chemisorption of the InCp precursor and proton transfer fromthe substrate to the Cp ligand of the precursor. This was done for(1) hydrogenated silicon and (2) hydroxylated silicon oxide surfaces,as these are expected to represent the H-terminated and plasma activatedsurfaces to a good approximation. The reactions considered are therefore12where the asterisksindicate the surface speciesinvolved in the reactions.


Area-Selective Atomic Layer Deposition of In 2 O 3 :H Using a μ -Plasma Printer for Local AreaActivation
Film thickness measured by in situ SE as a functionof the In2O3:H ALD cycles on SiO2 (open triangles)and on a-Si:H (open circles). Ex situ SE measurements were taken onlyfor 600 and 780 ALD cycles on a-Si:H. Above 600 ALD cycles the selectivityof the process appears to degrade.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC5384477&req=5

fig4: Film thickness measured by in situ SE as a functionof the In2O3:H ALD cycles on SiO2 (open triangles)and on a-Si:H (open circles). Ex situ SE measurements were taken onlyfor 600 and 780 ALD cycles on a-Si:H. Above 600 ALD cycles the selectivityof the process appears to degrade.
Mentions: As mentioned at thebeginning of this communication, the selectivityof the In2O3:H ALD process is stemming fromthe fact that very long nucleation delays are obtained on H-terminatedsurfaces of silicon materials whereas the nucleation delay on oxidesurfaces is considerably shorter as shown in Figure 4.25 To elucidatethe role of the surface groups during ALD of In2O3:H, first-principle calculations have been carried out using densityfunctional theory (DFT)29,30 with the Perdew–Burke–Ernzerhof(PBE) exchange correlation functional.31,32 van der Waalsinteractions were also accounted for on an empirical basis.33 Additional computational details can be foundin the Supporting Information Section 1.4.The structures and associated relative energies have been calculatedfor the stationary points along the anticipated reaction pathwaysfor the chemisorption of the InCp precursor and proton transfer fromthe substrate to the Cp ligand of the precursor. This was done for(1) hydrogenated silicon and (2) hydroxylated silicon oxide surfaces,as these are expected to represent the H-terminated and plasma activatedsurfaces to a good approximation. The reactions considered are therefore12where the asterisksindicate the surface speciesinvolved in the reactions.

View Article: PubMed Central - PubMed

AUTOMATICALLY GENERATED EXCERPT
Please rate it.

It was also verified that the area-selective processing does not of the In2O3:H ALD process is stemming from interactions were also accounted for on an empirical basis... Additional computational details can be found corresponding energies obtained by the DFT calculations... The results surfaces of H-terminated silicon materials... In conclusion, a surfaces of silicon materials by a μ-plasma printer and AS-ALD both the μ-plasma printing and the AS-ALD process are scalable... on flexible substrates combined with spatial ALD processes will be investigations using a focused electron beam have yielded promising results with respect to the extension of the current direct-write ALD process of In2O3:H toward nanoscale dimensions.

No MeSH data available.