Limits...
Area-Selective Atomic Layer Deposition of In 2 O 3 :H Using a μ -Plasma Printer for Local AreaActivation

View Article: PubMed Central - PubMed

AUTOMATICALLY GENERATED EXCERPT
Please rate it.

It was also verified that the area-selective processing does not of the In2O3:H ALD process is stemming from interactions were also accounted for on an empirical basis... Additional computational details can be found corresponding energies obtained by the DFT calculations... The results surfaces of H-terminated silicon materials... In conclusion, a surfaces of silicon materials by a μ-plasma printer and AS-ALD both the μ-plasma printing and the AS-ALD process are scalable... on flexible substrates combined with spatial ALD processes will be investigations using a focused electron beam have yielded promising results with respect to the extension of the current direct-write ALD process of In2O3:H toward nanoscale dimensions.

No MeSH data available.


Schematic representation of the area-selective ALD processof In2O3:H on H-terminated silicon materials.In thefirst step (1), microscale patterns are defined by activating thesurface with a μ-plasma operated in air or O2. Inthe second step (2), the In2O3:H is depositedselectively on the activated areas in a building step. The ALD processconsists of two alternating half reactions: InCp precursor dosingin pulse A and a mixture of O2 and H2O dosingin pulse B. Note that in the case that conductive substrates are used,a thin dielectric membrane (Al2O3) is positionedbetween the needles and the substrate, as shown in Figure S1a.
© Copyright Policy
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC5384477&req=5

fig1: Schematic representation of the area-selective ALD processof In2O3:H on H-terminated silicon materials.In thefirst step (1), microscale patterns are defined by activating thesurface with a μ-plasma operated in air or O2. Inthe second step (2), the In2O3:H is depositedselectively on the activated areas in a building step. The ALD processconsists of two alternating half reactions: InCp precursor dosingin pulse A and a mixture of O2 and H2O dosingin pulse B. Note that in the case that conductive substrates are used,a thin dielectric membrane (Al2O3) is positionedbetween the needles and the substrate, as shown in Figure S1a.

Mentions: In this work, we present a novel methodfor AS-ALD which targetsthe preparation of microscale features relevant in large-area electronics.It is a direct-write ALD process of In2O3:H, a highly promising and relevant TCO material,23 which makes use of printing technology for surfaceactivation. As schematically depicted in Figure 1, first the surface of H-terminated siliconmaterials is locally activated by a μ-plasma printer in airor O2,24 and subsequently In2O3:H is deposited selectively on the activatedareas. The selectivity stems from the fact that ALD In2O3:H leads to very long nucleation delays on H-terminatedsilicon materials.25 In this work it isdemonstrated that this method allows for preparing microscale In2O3:H features in a true bottom-up approach on surfacesof H-terminated Si(100), a-Si:H or a-SiNx:H with the In2O3:H material quality beingas high as for blanket films.26 This novelapproach for direct-write ALD of In2O3:H holds therefore potential for applications in large-areaelectronics which make use of patterned TCOs such as displays andsolar cells.


Area-Selective Atomic Layer Deposition of In 2 O 3 :H Using a μ -Plasma Printer for Local AreaActivation
Schematic representation of the area-selective ALD processof In2O3:H on H-terminated silicon materials.In thefirst step (1), microscale patterns are defined by activating thesurface with a μ-plasma operated in air or O2. Inthe second step (2), the In2O3:H is depositedselectively on the activated areas in a building step. The ALD processconsists of two alternating half reactions: InCp precursor dosingin pulse A and a mixture of O2 and H2O dosingin pulse B. Note that in the case that conductive substrates are used,a thin dielectric membrane (Al2O3) is positionedbetween the needles and the substrate, as shown in Figure S1a.
© Copyright Policy
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC5384477&req=5

fig1: Schematic representation of the area-selective ALD processof In2O3:H on H-terminated silicon materials.In thefirst step (1), microscale patterns are defined by activating thesurface with a μ-plasma operated in air or O2. Inthe second step (2), the In2O3:H is depositedselectively on the activated areas in a building step. The ALD processconsists of two alternating half reactions: InCp precursor dosingin pulse A and a mixture of O2 and H2O dosingin pulse B. Note that in the case that conductive substrates are used,a thin dielectric membrane (Al2O3) is positionedbetween the needles and the substrate, as shown in Figure S1a.
Mentions: In this work, we present a novel methodfor AS-ALD which targetsthe preparation of microscale features relevant in large-area electronics.It is a direct-write ALD process of In2O3:H, a highly promising and relevant TCO material,23 which makes use of printing technology for surfaceactivation. As schematically depicted in Figure 1, first the surface of H-terminated siliconmaterials is locally activated by a μ-plasma printer in airor O2,24 and subsequently In2O3:H is deposited selectively on the activatedareas. The selectivity stems from the fact that ALD In2O3:H leads to very long nucleation delays on H-terminatedsilicon materials.25 In this work it isdemonstrated that this method allows for preparing microscale In2O3:H features in a true bottom-up approach on surfacesof H-terminated Si(100), a-Si:H or a-SiNx:H with the In2O3:H material quality beingas high as for blanket films.26 This novelapproach for direct-write ALD of In2O3:H holds therefore potential for applications in large-areaelectronics which make use of patterned TCOs such as displays andsolar cells.

View Article: PubMed Central - PubMed

AUTOMATICALLY GENERATED EXCERPT
Please rate it.

It was also verified that the area-selective processing does not of the In2O3:H ALD process is stemming from interactions were also accounted for on an empirical basis... Additional computational details can be found corresponding energies obtained by the DFT calculations... The results surfaces of H-terminated silicon materials... In conclusion, a surfaces of silicon materials by a μ-plasma printer and AS-ALD both the μ-plasma printing and the AS-ALD process are scalable... on flexible substrates combined with spatial ALD processes will be investigations using a focused electron beam have yielded promising results with respect to the extension of the current direct-write ALD process of In2O3:H toward nanoscale dimensions.

No MeSH data available.