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Transverse Domain Wall Profile for Spin Logic Applications

View Article: PubMed Central - PubMed

ABSTRACT

Domain wall (DW) based logic and memory devices require precise control and manipulation of DW in nanowire conduits. The topological defects of Transverse DWs (TDW) are of paramount importance as regards to the deterministic pinning and movement of DW within complex networks of conduits. In-situ control of the DW topological defects in nanowire conduits may pave the way for novel DW logic applications. In this work, we present a geometrical modulation along a nanowire conduit, which allows for the topological rectification/inversion of TDW in nanowires. This is achieved by exploiting the controlled relaxation of the TDW within an angled rectangle. Direct evidence of the logical operation is obtained via magnetic force microscopy measurement.

No MeSH data available.


Spin state evolution as a TDW traverses through the rectifier for (a) TT TDW with DOWN chirality (+½ ∼ −½ edge defects), which undergoes a controlled reversal from TDW to vortex DW and back to TDW with opposite edge defects, (b) TT TDW with UP chirality (−½ ∼ +½ edge defects) traverses through the structure without any topological rectification.
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f2: Spin state evolution as a TDW traverses through the rectifier for (a) TT TDW with DOWN chirality (+½ ∼ −½ edge defects), which undergoes a controlled reversal from TDW to vortex DW and back to TDW with opposite edge defects, (b) TT TDW with UP chirality (−½ ∼ +½ edge defects) traverses through the structure without any topological rectification.

Mentions: The spin state evolution, obtained via micromagnetic simulation, as a TTDW is driven through rectifier is shown in Fig. 2. From our simulations, we noted that for rectification, α needs to be in the range of 10° to 15°. The topological defect for a TT TDW with transverse component along +y direction (TTU), is −½ ∼ +½, whereas for a TTDW with transverse component along −y direction (TTD) is +½ ∼ −½. For a TTD DW, as seen in Fig. 2(a), the DW undergoes a transformation from TTD to vortex and subsequently to TTU as the wall moves through the structure. At the entrance of rectifier, the transverse component of the TTD DW is in the opposite direction to the spins at the left hand edge of the angled rectangle.


Transverse Domain Wall Profile for Spin Logic Applications
Spin state evolution as a TDW traverses through the rectifier for (a) TT TDW with DOWN chirality (+½ ∼ −½ edge defects), which undergoes a controlled reversal from TDW to vortex DW and back to TDW with opposite edge defects, (b) TT TDW with UP chirality (−½ ∼ +½ edge defects) traverses through the structure without any topological rectification.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC5384327&req=5

f2: Spin state evolution as a TDW traverses through the rectifier for (a) TT TDW with DOWN chirality (+½ ∼ −½ edge defects), which undergoes a controlled reversal from TDW to vortex DW and back to TDW with opposite edge defects, (b) TT TDW with UP chirality (−½ ∼ +½ edge defects) traverses through the structure without any topological rectification.
Mentions: The spin state evolution, obtained via micromagnetic simulation, as a TTDW is driven through rectifier is shown in Fig. 2. From our simulations, we noted that for rectification, α needs to be in the range of 10° to 15°. The topological defect for a TT TDW with transverse component along +y direction (TTU), is −½ ∼ +½, whereas for a TTDW with transverse component along −y direction (TTD) is +½ ∼ −½. For a TTD DW, as seen in Fig. 2(a), the DW undergoes a transformation from TTD to vortex and subsequently to TTU as the wall moves through the structure. At the entrance of rectifier, the transverse component of the TTD DW is in the opposite direction to the spins at the left hand edge of the angled rectangle.

View Article: PubMed Central - PubMed

ABSTRACT

Domain wall (DW) based logic and memory devices require precise control and manipulation of DW in nanowire conduits. The topological defects of Transverse DWs (TDW) are of paramount importance as regards to the deterministic pinning and movement of DW within complex networks of conduits. In-situ control of the DW topological defects in nanowire conduits may pave the way for novel DW logic applications. In this work, we present a geometrical modulation along a nanowire conduit, which allows for the topological rectification/inversion of TDW in nanowires. This is achieved by exploiting the controlled relaxation of the TDW within an angled rectangle. Direct evidence of the logical operation is obtained via magnetic force microscopy measurement.

No MeSH data available.