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Transverse Domain Wall Profile for Spin Logic Applications

View Article: PubMed Central - PubMed

ABSTRACT

Domain wall (DW) based logic and memory devices require precise control and manipulation of DW in nanowire conduits. The topological defects of Transverse DWs (TDW) are of paramount importance as regards to the deterministic pinning and movement of DW within complex networks of conduits. In-situ control of the DW topological defects in nanowire conduits may pave the way for novel DW logic applications. In this work, we present a geometrical modulation along a nanowire conduit, which allows for the topological rectification/inversion of TDW in nanowires. This is achieved by exploiting the controlled relaxation of the TDW within an angled rectangle. Direct evidence of the logical operation is obtained via magnetic force microscopy measurement.

No MeSH data available.


Schematic representation of the topological rectification and inversion of transverse domain wall.The output from the rectifier has a −½ ∼ +½ edge defect irrespective of the topological edge defects at the input while inverter outputs an opposite edge defect as the input.
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f1: Schematic representation of the topological rectification and inversion of transverse domain wall.The output from the rectifier has a −½ ∼ +½ edge defect irrespective of the topological edge defects at the input while inverter outputs an opposite edge defect as the input.

Mentions: In thin film narrow magnetic nanowires, the transverse DW (TDW) is the stable configuration. TDWs are characterized by a magnetostatic charge; positive for head-to head (HH) DWs where the magnetizations are pointing towards each other and negative for tail to tail (TT) DWs when magnetizations are pointing away. The transverse component of the TDW gives the sense of rotation of the spins within the wall, leading to the TDW chirality. The chirality of the wall can be defined as either “UP” or “DOWN”, reflecting the orientation of the transverse component of the wall. Another approach to describing TDW is to view it as a composite object of elementary topological defects19. The edge defects have half-integer winding numbers, either +½ or −½, representing the spin configuration of the DW at the edges of the nanowire, as illustrated in Figure 1.


Transverse Domain Wall Profile for Spin Logic Applications
Schematic representation of the topological rectification and inversion of transverse domain wall.The output from the rectifier has a −½ ∼ +½ edge defect irrespective of the topological edge defects at the input while inverter outputs an opposite edge defect as the input.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC5384327&req=5

f1: Schematic representation of the topological rectification and inversion of transverse domain wall.The output from the rectifier has a −½ ∼ +½ edge defect irrespective of the topological edge defects at the input while inverter outputs an opposite edge defect as the input.
Mentions: In thin film narrow magnetic nanowires, the transverse DW (TDW) is the stable configuration. TDWs are characterized by a magnetostatic charge; positive for head-to head (HH) DWs where the magnetizations are pointing towards each other and negative for tail to tail (TT) DWs when magnetizations are pointing away. The transverse component of the TDW gives the sense of rotation of the spins within the wall, leading to the TDW chirality. The chirality of the wall can be defined as either “UP” or “DOWN”, reflecting the orientation of the transverse component of the wall. Another approach to describing TDW is to view it as a composite object of elementary topological defects19. The edge defects have half-integer winding numbers, either +½ or −½, representing the spin configuration of the DW at the edges of the nanowire, as illustrated in Figure 1.

View Article: PubMed Central - PubMed

ABSTRACT

Domain wall (DW) based logic and memory devices require precise control and manipulation of DW in nanowire conduits. The topological defects of Transverse DWs (TDW) are of paramount importance as regards to the deterministic pinning and movement of DW within complex networks of conduits. In-situ control of the DW topological defects in nanowire conduits may pave the way for novel DW logic applications. In this work, we present a geometrical modulation along a nanowire conduit, which allows for the topological rectification/inversion of TDW in nanowires. This is achieved by exploiting the controlled relaxation of the TDW within an angled rectangle. Direct evidence of the logical operation is obtained via magnetic force microscopy measurement.

No MeSH data available.