Limits...
Probing Defects in Nitrogen-Doped Cu 2 O

View Article: PubMed Central - PubMed

ABSTRACT

Nitrogen doping is a promising method of engineering the electronic structure of a metal oxide to modify its optical and electrical properties; however, the doping effect strongly depends on the types of defects introduced. Herein, we report a comparative study of nitrogen-doping-induced defects in Cu2O. Even in the lightly doped samples, a considerable number of nitrogen interstitials (Ni) formed, accompanied by nitrogen substitutions (NO) and oxygen vacancies (VO). In the course of high-temperature annealing, these Ni atoms interacted with VO, resulting in an increase in NO and decreases in Ni and VO. The properties of the annealed sample were significantly modified as a result. Our results suggest that Ni is a significant defect type in nitrogen-doped Cu2O.

No MeSH data available.


Photoluminescence spectra of (a) Cu2O samples, (b) Cu2O:N samples doped at 200 W, and (c) enlarged portion of (b) in the vicinity of the exciton emission.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC5384195&req=5

f4: Photoluminescence spectra of (a) Cu2O samples, (b) Cu2O:N samples doped at 200 W, and (c) enlarged portion of (b) in the vicinity of the exciton emission.

Mentions: Figure 4(a) presents the PL spectra of the Cu2O samples, with arrows indicating positions related to the excitons, VO and VCu. The presence of VO is due to the oxygen-lean growth conditions. After high-temperature annealing, the exciton luminescence was remarkably enhanced, whereas the intensity of the VO signature did not change significantly, suggesting an improvement in crystal quality after annealing. Notably, the formation of VCu was suppressed because of the oxygen-lean conditions during growth, enabling a strong exciton luminescence2526. The shape of the exciton luminescence peak can be well interpreted in terms of phonon-assisted transitions, as discussed in Ref. 26.


Probing Defects in Nitrogen-Doped Cu 2 O
Photoluminescence spectra of (a) Cu2O samples, (b) Cu2O:N samples doped at 200 W, and (c) enlarged portion of (b) in the vicinity of the exciton emission.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC5384195&req=5

f4: Photoluminescence spectra of (a) Cu2O samples, (b) Cu2O:N samples doped at 200 W, and (c) enlarged portion of (b) in the vicinity of the exciton emission.
Mentions: Figure 4(a) presents the PL spectra of the Cu2O samples, with arrows indicating positions related to the excitons, VO and VCu. The presence of VO is due to the oxygen-lean growth conditions. After high-temperature annealing, the exciton luminescence was remarkably enhanced, whereas the intensity of the VO signature did not change significantly, suggesting an improvement in crystal quality after annealing. Notably, the formation of VCu was suppressed because of the oxygen-lean conditions during growth, enabling a strong exciton luminescence2526. The shape of the exciton luminescence peak can be well interpreted in terms of phonon-assisted transitions, as discussed in Ref. 26.

View Article: PubMed Central - PubMed

ABSTRACT

Nitrogen doping is a promising method of engineering the electronic structure of a metal oxide to modify its optical and electrical properties; however, the doping effect strongly depends on the types of defects introduced. Herein, we report a comparative study of nitrogen-doping-induced defects in Cu2O. Even in the lightly doped samples, a considerable number of nitrogen interstitials (Ni) formed, accompanied by nitrogen substitutions (NO) and oxygen vacancies (VO). In the course of high-temperature annealing, these Ni atoms interacted with VO, resulting in an increase in NO and decreases in Ni and VO. The properties of the annealed sample were significantly modified as a result. Our results suggest that Ni is a significant defect type in nitrogen-doped Cu2O.

No MeSH data available.