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Negative differential resistance and bias-modulated metal-to-insulator transition in zigzag C 2 N- h 2D nanoribbon

View Article: PubMed Central - PubMed

ABSTRACT

Motivated by the fabrication of layered two-dimensional material C2N-h2D [Nat. Commun. 6, 6486 (2015)], we cut the single-layer C2N-h2D into a zigzag nanoribbon and perform a theoretical study. The results indicate that the band structure changes from semiconducting to metallic and a negative differential resistance effect occurs in the I-V curve. Interestingly, the current can be reduced to zero and this insulator-like state can be maintained as the bias increases. We find this unique property is originated from a peculiar band morphology, with only two subbands appearing around the Fermi level while others being far away. Furthermore the width and symmetry of the zigzag C2N-h2D nanoribbon can be used to tune the transport properties, such as cut-off bias and the maximum current. We also explore the electron transport property of an aperiodic model composed of two nanoribbons with different widths and obtain the same conclusion. This mechanism can be extended to other systems, e.g., hybrid BCN nanoribbons. Our discoveries suggest that the zigzag C2N-h2D nanoribbon has great potential in nanoelectronics applications.

No MeSH data available.


The current-voltage curve of zigzag C2N-h2D nanoribbon in the bias range from 0.0 to 1.0 V.(a) W = 1.0; (b) W = 1.5.
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f2: The current-voltage curve of zigzag C2N-h2D nanoribbon in the bias range from 0.0 to 1.0 V.(a) W = 1.0; (b) W = 1.5.

Mentions: Figure 2(a) presents the current-voltage (I-V) characteristic of the two-probe system with W = 1.0. Apparently, a NDR peak appears in our model. The current firstly increases as the bias increases and reaches the maximum when the bias is 0.2 V and then smoothly decreases to zero as the bias increases to 0.5 V. We define 0.5 V as the cut-off bias. Interestingly, as the bias continues to increase, the current maintains at zero. It indicates that the system is in an insulator-like state. This is contrary to its metallic state under a low bias. As far as we know, this phenomenon has not been reported in periodic systems with widths of several nanometers. A similar I-V characteristic can be seen in W = 1.5 model as shown in Fig. 2(b), but the cut-off bias and the maximum current decrease due to the increased width.


Negative differential resistance and bias-modulated metal-to-insulator transition in zigzag C 2 N- h 2D nanoribbon
The current-voltage curve of zigzag C2N-h2D nanoribbon in the bias range from 0.0 to 1.0 V.(a) W = 1.0; (b) W = 1.5.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC5382534&req=5

f2: The current-voltage curve of zigzag C2N-h2D nanoribbon in the bias range from 0.0 to 1.0 V.(a) W = 1.0; (b) W = 1.5.
Mentions: Figure 2(a) presents the current-voltage (I-V) characteristic of the two-probe system with W = 1.0. Apparently, a NDR peak appears in our model. The current firstly increases as the bias increases and reaches the maximum when the bias is 0.2 V and then smoothly decreases to zero as the bias increases to 0.5 V. We define 0.5 V as the cut-off bias. Interestingly, as the bias continues to increase, the current maintains at zero. It indicates that the system is in an insulator-like state. This is contrary to its metallic state under a low bias. As far as we know, this phenomenon has not been reported in periodic systems with widths of several nanometers. A similar I-V characteristic can be seen in W = 1.5 model as shown in Fig. 2(b), but the cut-off bias and the maximum current decrease due to the increased width.

View Article: PubMed Central - PubMed

ABSTRACT

Motivated by the fabrication of layered two-dimensional material C2N-h2D [Nat. Commun. 6, 6486 (2015)], we cut the single-layer C2N-h2D into a zigzag nanoribbon and perform a theoretical study. The results indicate that the band structure changes from semiconducting to metallic and a negative differential resistance effect occurs in the I-V curve. Interestingly, the current can be reduced to zero and this insulator-like state can be maintained as the bias increases. We find this unique property is originated from a peculiar band morphology, with only two subbands appearing around the Fermi level while others being far away. Furthermore the width and symmetry of the zigzag C2N-h2D nanoribbon can be used to tune the transport properties, such as cut-off bias and the maximum current. We also explore the electron transport property of an aperiodic model composed of two nanoribbons with different widths and obtain the same conclusion. This mechanism can be extended to other systems, e.g., hybrid BCN nanoribbons. Our discoveries suggest that the zigzag C2N-h2D nanoribbon has great potential in nanoelectronics applications.

No MeSH data available.