Limits...
Patterned transparent electrode with a continuous distribution of silver nanowires produced by an etching-free patterning method

View Article: PubMed Central - PubMed

ABSTRACT

The outstanding electrical, optical, and mechanical properties of silver nanowire transparent electrodes are attractive for use in many optoelectronic devices, and the recent developments related to these electrodes have led to their commercialization. To more fully utilize the advantages of this technology, developing new process technologies in addition to performance improvements is important. In this report, we propose a novel ultra-simple patterning technology to generate a silver nanowire transparent layer and a unique patterned structure with continuously distributed silver nanowires without any etched areas. The patterning is conducted by exposure to ultraviolet light and rinsing. The exposed and unexposed regions of the resulting layer have dramatically different electrical conductivities, which produces an electrical pathway without using any etching or lift-off processes. The unique patterned structure produced by this etching-free method creates hardly any optical difference between the two regions and results in excellent visibility of the patterned transparent electrode layer.

No MeSH data available.


The AFM images of the boundary between the exposed and unexposed regions.(a) The image captured in the height mode. (b) The image captured in the current mode. The white line in (b) shows the electrical current pathways.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC5304198&req=5

f3: The AFM images of the boundary between the exposed and unexposed regions.(a) The image captured in the height mode. (b) The image captured in the current mode. The white line in (b) shows the electrical current pathways.

Mentions: Figure 3 displays the atomic force microscopy (AFM) topographies (height mode, conducting mode) of the boundary. As shown in the height-mode topographic image, the AgNWs were located all over the surface and boundary. However, in conducting mode, the current mapping of each region revealed a different electrical connectivity in each region. The unexposed region had a high current density, in accordance with the distributed AgNWs. However, there was no electrical conductivity in the exposed region, and the AgNWs themselves did not have a remarkable current density because they were nearly all buried in the middle of the cross-linked sbq-PVA. The applied voltage difference between the AFM tip and substrate was 4 V in current mode.


Patterned transparent electrode with a continuous distribution of silver nanowires produced by an etching-free patterning method
The AFM images of the boundary between the exposed and unexposed regions.(a) The image captured in the height mode. (b) The image captured in the current mode. The white line in (b) shows the electrical current pathways.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC5304198&req=5

f3: The AFM images of the boundary between the exposed and unexposed regions.(a) The image captured in the height mode. (b) The image captured in the current mode. The white line in (b) shows the electrical current pathways.
Mentions: Figure 3 displays the atomic force microscopy (AFM) topographies (height mode, conducting mode) of the boundary. As shown in the height-mode topographic image, the AgNWs were located all over the surface and boundary. However, in conducting mode, the current mapping of each region revealed a different electrical connectivity in each region. The unexposed region had a high current density, in accordance with the distributed AgNWs. However, there was no electrical conductivity in the exposed region, and the AgNWs themselves did not have a remarkable current density because they were nearly all buried in the middle of the cross-linked sbq-PVA. The applied voltage difference between the AFM tip and substrate was 4 V in current mode.

View Article: PubMed Central - PubMed

ABSTRACT

The outstanding electrical, optical, and mechanical properties of silver nanowire transparent electrodes are attractive for use in many optoelectronic devices, and the recent developments related to these electrodes have led to their commercialization. To more fully utilize the advantages of this technology, developing new process technologies in addition to performance improvements is important. In this report, we propose a novel ultra-simple patterning technology to generate a silver nanowire transparent layer and a unique patterned structure with continuously distributed silver nanowires without any etched areas. The patterning is conducted by exposure to ultraviolet light and rinsing. The exposed and unexposed regions of the resulting layer have dramatically different electrical conductivities, which produces an electrical pathway without using any etching or lift-off processes. The unique patterned structure produced by this etching-free method creates hardly any optical difference between the two regions and results in excellent visibility of the patterned transparent electrode layer.

No MeSH data available.