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Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer

View Article: PubMed Central - PubMed

ABSTRACT

Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O2 gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm2/Vs, a threshold voltage of 6.4 V and an on/off current ratio of 4.5 × 105. Further, high mechanical stability was achieved by the use of organic/inorganic stacking of dielectric and channel layers. Thus, the IGZO transistor endured unprecedented bending strain up to 3.33% at a bending radius of 1.5 mm with no significant degradation in transistor performances along with a superior reliability up to 1000 cycles.

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Transfer characteristics of IGZO TFT after different bending cycles along the channel width direction at a bending radius of (a) 3 mm and (b) 1.5 mm as well as along the channel length direction at a bending radius of (c) 3 mm and (d) 1.5 mm. (e) Comparison of the mobility and threshold voltage with the bending cycles in the four cases. The bending was performed in ambient conditions, and the measurements were performed after releasing the bending stress.
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f6: Transfer characteristics of IGZO TFT after different bending cycles along the channel width direction at a bending radius of (a) 3 mm and (b) 1.5 mm as well as along the channel length direction at a bending radius of (c) 3 mm and (d) 1.5 mm. (e) Comparison of the mobility and threshold voltage with the bending cycles in the four cases. The bending was performed in ambient conditions, and the measurements were performed after releasing the bending stress.

Mentions: The surfaces of TFTs at pristine state, and while being bent at 3 mm and 1.5 mm radius were observed using an optical microscope (SI, S9, S10). There are no visible cracks along the channel with 100 × magnification while being bent at the 3 mm bending radius in both directions. However, when the device was bent along the channel width at a bending radius of 1.5 mm, nanoscale cracks were visible running along the channel width direction (SI, S9c). Once the bending stress was released, those nanoscale cracks were no longer visible with a microscope (SI, S9d). These nanoscale cracks, which were running perpendicular to the channel length, were responsible for the decrease in the Ion current. The mobility was also seriously reduced to 3.83 cm2/Vs after the first bending, but it remained constant for the following bending cycles, as shown in Fig. 6e. In comparison, when the device was bent along the channel length, the cracks ran parallel to the channel length direction (SI, S10c). In this case, the TFT demonstrated reliable transfer characteristics even at a 1.5 mm bending radius without any performance degradation in terms of mobility and threshold voltage.


Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer
Transfer characteristics of IGZO TFT after different bending cycles along the channel width direction at a bending radius of (a) 3 mm and (b) 1.5 mm as well as along the channel length direction at a bending radius of (c) 3 mm and (d) 1.5 mm. (e) Comparison of the mobility and threshold voltage with the bending cycles in the four cases. The bending was performed in ambient conditions, and the measurements were performed after releasing the bending stress.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC5120347&req=5

f6: Transfer characteristics of IGZO TFT after different bending cycles along the channel width direction at a bending radius of (a) 3 mm and (b) 1.5 mm as well as along the channel length direction at a bending radius of (c) 3 mm and (d) 1.5 mm. (e) Comparison of the mobility and threshold voltage with the bending cycles in the four cases. The bending was performed in ambient conditions, and the measurements were performed after releasing the bending stress.
Mentions: The surfaces of TFTs at pristine state, and while being bent at 3 mm and 1.5 mm radius were observed using an optical microscope (SI, S9, S10). There are no visible cracks along the channel with 100 × magnification while being bent at the 3 mm bending radius in both directions. However, when the device was bent along the channel width at a bending radius of 1.5 mm, nanoscale cracks were visible running along the channel width direction (SI, S9c). Once the bending stress was released, those nanoscale cracks were no longer visible with a microscope (SI, S9d). These nanoscale cracks, which were running perpendicular to the channel length, were responsible for the decrease in the Ion current. The mobility was also seriously reduced to 3.83 cm2/Vs after the first bending, but it remained constant for the following bending cycles, as shown in Fig. 6e. In comparison, when the device was bent along the channel length, the cracks ran parallel to the channel length direction (SI, S10c). In this case, the TFT demonstrated reliable transfer characteristics even at a 1.5 mm bending radius without any performance degradation in terms of mobility and threshold voltage.

View Article: PubMed Central - PubMed

ABSTRACT

Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O2 gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm2/Vs, a threshold voltage of 6.4 V and an on/off current ratio of 4.5 × 105. Further, high mechanical stability was achieved by the use of organic/inorganic stacking of dielectric and channel layers. Thus, the IGZO transistor endured unprecedented bending strain up to 3.33% at a bending radius of 1.5 mm with no significant degradation in transistor performances along with a superior reliability up to 1000 cycles.

No MeSH data available.


Related in: MedlinePlus