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Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices

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ABSTRACT

Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.

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Electrical control of transport properties.(a) The conventional I-V curve measured by using Keithley 2400 and 2182A is marked as DC, while the I-V curves measured under different fixed AC amplitudes is marked as DC+AC x μA, where x represents the applied AC amplitude. Inset shows the schematic measurement configuration, where magnetic field is applied parallel to the current flow in the Ge substrate. (b) The AC amplitude dependence of the voltage intercept deduced from Fig. 1a. The top inset shows the real time voltage obtained by using oscilloscope when a small DC current of 1 nA was supplied by Keithley 2400, while the bottom inset shows the real time voltage obtained when a sinusoidal AC of 0.1 mA with constant DC offset of 1 μA was supplied by Keithley 6221. (c) The magnetic field dependence of the detected DC voltage measured for variable DC offset at a fixed AC = 0.1 mA. (d) The DC offset dependence of the deduced rectification MR from Fig. 1c.
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f1: Electrical control of transport properties.(a) The conventional I-V curve measured by using Keithley 2400 and 2182A is marked as DC, while the I-V curves measured under different fixed AC amplitudes is marked as DC+AC x μA, where x represents the applied AC amplitude. Inset shows the schematic measurement configuration, where magnetic field is applied parallel to the current flow in the Ge substrate. (b) The AC amplitude dependence of the voltage intercept deduced from Fig. 1a. The top inset shows the real time voltage obtained by using oscilloscope when a small DC current of 1 nA was supplied by Keithley 2400, while the bottom inset shows the real time voltage obtained when a sinusoidal AC of 0.1 mA with constant DC offset of 1 μA was supplied by Keithley 6221. (c) The magnetic field dependence of the detected DC voltage measured for variable DC offset at a fixed AC = 0.1 mA. (d) The DC offset dependence of the deduced rectification MR from Fig. 1c.

Mentions: Figure 1 summarizes the most intriguing results of current investigation, i.e., great manipulation on the magneto-transport properties by the simultaneous application of DC and AC. First of all, a significant modification on the I-V curves by the application of AC is clearly revealed in Fig. 1a and b, where the voltage intercept (IDC = 0) increases with increasing AC amplitude. This remarkable modification can be understood as a consequence of the conventional AC rectification effect by the Al/Ge Schottky device.


Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices
Electrical control of transport properties.(a) The conventional I-V curve measured by using Keithley 2400 and 2182A is marked as DC, while the I-V curves measured under different fixed AC amplitudes is marked as DC+AC x μA, where x represents the applied AC amplitude. Inset shows the schematic measurement configuration, where magnetic field is applied parallel to the current flow in the Ge substrate. (b) The AC amplitude dependence of the voltage intercept deduced from Fig. 1a. The top inset shows the real time voltage obtained by using oscilloscope when a small DC current of 1 nA was supplied by Keithley 2400, while the bottom inset shows the real time voltage obtained when a sinusoidal AC of 0.1 mA with constant DC offset of 1 μA was supplied by Keithley 6221. (c) The magnetic field dependence of the detected DC voltage measured for variable DC offset at a fixed AC = 0.1 mA. (d) The DC offset dependence of the deduced rectification MR from Fig. 1c.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC5120293&req=5

f1: Electrical control of transport properties.(a) The conventional I-V curve measured by using Keithley 2400 and 2182A is marked as DC, while the I-V curves measured under different fixed AC amplitudes is marked as DC+AC x μA, where x represents the applied AC amplitude. Inset shows the schematic measurement configuration, where magnetic field is applied parallel to the current flow in the Ge substrate. (b) The AC amplitude dependence of the voltage intercept deduced from Fig. 1a. The top inset shows the real time voltage obtained by using oscilloscope when a small DC current of 1 nA was supplied by Keithley 2400, while the bottom inset shows the real time voltage obtained when a sinusoidal AC of 0.1 mA with constant DC offset of 1 μA was supplied by Keithley 6221. (c) The magnetic field dependence of the detected DC voltage measured for variable DC offset at a fixed AC = 0.1 mA. (d) The DC offset dependence of the deduced rectification MR from Fig. 1c.
Mentions: Figure 1 summarizes the most intriguing results of current investigation, i.e., great manipulation on the magneto-transport properties by the simultaneous application of DC and AC. First of all, a significant modification on the I-V curves by the application of AC is clearly revealed in Fig. 1a and b, where the voltage intercept (IDC = 0) increases with increasing AC amplitude. This remarkable modification can be understood as a consequence of the conventional AC rectification effect by the Al/Ge Schottky device.

View Article: PubMed Central - PubMed

ABSTRACT

Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.

No MeSH data available.


Related in: MedlinePlus