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Negative Magnetoresistance in Amorphous Indium Oxide Wires

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ABSTRACT

We study magneto-transport properties of several amorphous Indium oxide nanowires of different widths. The wires show superconducting transition at zero magnetic field, but, there exist a finite resistance at the lowest temperature. The R(T) broadening was explained by available phase slip models. At low field, and far below the superconducting critical temperature, the wires with diameter equal to or less than 100 nm, show negative magnetoresistance (nMR). The magnitude of nMR and the crossover field are found to be dependent on both temperature and the cross-sectional area. We find that this intriguing behavior originates from the interplay between two field dependent contributions.

No MeSH data available.


Related in: MedlinePlus

(a) The R vs B isotherms (in semi-log scale) for the film, showing B-driven SIT (Bc ≈ 4.05 T). At Bc, R is 6.5 kΩ, which is close to quantum resistance of Cooper pair. (b) The R(B) isotherms for w = 48 nm wire at the same Ts as of the film (see the color palette). The low-field magnetoresistance peak at B = 0 is clearly visible. The isotherms cross each other at B = 10 T, signifying SIT.
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f4: (a) The R vs B isotherms (in semi-log scale) for the film, showing B-driven SIT (Bc ≈ 4.05 T). At Bc, R is 6.5 kΩ, which is close to quantum resistance of Cooper pair. (b) The R(B) isotherms for w = 48 nm wire at the same Ts as of the film (see the color palette). The low-field magnetoresistance peak at B = 0 is clearly visible. The isotherms cross each other at B = 10 T, signifying SIT.

Mentions: For the rest, we will focus on the B dependence of R of the devices. We begin the presentation of our B-dependent data by plotting, in Fig. 4(a), the R(B) isotherms (in semi-log scale) obtained for the film, over our entire B range. The isotherms crossed each other at a particular B, (Bc ≅ 4.05 T), signifying SIT. At Bc, the sheet R (R□) is equal to 6.5 kΩ which is close to R [=6.47 kΩ], and is in accordance with the bosonic description of SIT38. The high- B phenomenology exhibited by this film was similar to our previously studied a:InO films2539404142. In Fig. 4(b) the R vs B isotherms for the 48 nm wide wire is shown. Although B is expected to increase R, we find, near zero B, the residual R was actually suppressed by the application of B, leading to nMR over a certain B range. After that, R increased with B. The B-driven SIT occurs as the isotherms crossed at 10 T. It is interesting to see that, although at zero B the wire has a higher R than the film, its R changed much slowly with B in comparison and did not reach to as high R as the film at low- T25. The appearance of low- B nMR in sub-100 nm wide wires is the main focus here.


Negative Magnetoresistance in Amorphous Indium Oxide Wires
(a) The R vs B isotherms (in semi-log scale) for the film, showing B-driven SIT (Bc ≈ 4.05 T). At Bc, R is 6.5 kΩ, which is close to quantum resistance of Cooper pair. (b) The R(B) isotherms for w = 48 nm wire at the same Ts as of the film (see the color palette). The low-field magnetoresistance peak at B = 0 is clearly visible. The isotherms cross each other at B = 10 T, signifying SIT.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC5120288&req=5

f4: (a) The R vs B isotherms (in semi-log scale) for the film, showing B-driven SIT (Bc ≈ 4.05 T). At Bc, R is 6.5 kΩ, which is close to quantum resistance of Cooper pair. (b) The R(B) isotherms for w = 48 nm wire at the same Ts as of the film (see the color palette). The low-field magnetoresistance peak at B = 0 is clearly visible. The isotherms cross each other at B = 10 T, signifying SIT.
Mentions: For the rest, we will focus on the B dependence of R of the devices. We begin the presentation of our B-dependent data by plotting, in Fig. 4(a), the R(B) isotherms (in semi-log scale) obtained for the film, over our entire B range. The isotherms crossed each other at a particular B, (Bc ≅ 4.05 T), signifying SIT. At Bc, the sheet R (R□) is equal to 6.5 kΩ which is close to R [=6.47 kΩ], and is in accordance with the bosonic description of SIT38. The high- B phenomenology exhibited by this film was similar to our previously studied a:InO films2539404142. In Fig. 4(b) the R vs B isotherms for the 48 nm wide wire is shown. Although B is expected to increase R, we find, near zero B, the residual R was actually suppressed by the application of B, leading to nMR over a certain B range. After that, R increased with B. The B-driven SIT occurs as the isotherms crossed at 10 T. It is interesting to see that, although at zero B the wire has a higher R than the film, its R changed much slowly with B in comparison and did not reach to as high R as the film at low- T25. The appearance of low- B nMR in sub-100 nm wide wires is the main focus here.

View Article: PubMed Central - PubMed

ABSTRACT

We study magneto-transport properties of several amorphous Indium oxide nanowires of different widths. The wires show superconducting transition at zero magnetic field, but, there exist a finite resistance at the lowest temperature. The R(T) broadening was explained by available phase slip models. At low field, and far below the superconducting critical temperature, the wires with diameter equal to or less than 100 nm, show negative magnetoresistance (nMR). The magnitude of nMR and the crossover field are found to be dependent on both temperature and the cross-sectional area. We find that this intriguing behavior originates from the interplay between two field dependent contributions.

No MeSH data available.


Related in: MedlinePlus