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Improving the Photoelectric Characteristics of MoS 2 Thin Films by Doping Rare Earth Element Erbium

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ABSTRACT

We investigated the surface morphologies, crystal structures, and optical characteristics of rare earth element erbium (Er)-doped MoS2 (Er: MoS2) thin films fabricated on Si substrates via chemical vapor deposition (CVD). The surface mopography, crystalline structure, light absorption property, and the photoelectronic characteristics of the Er: MoS2 films were studied. The results indicate that doping makes the crystallinity of MoS2 films better than that of the undoped film. Meanwhile, the electron mobility and conductivity of the Er-doped MoS2 films increase about one order of magnitude, and the current-voltage (I-V) and the photoelectric response characteristics of the Er:MoS2/Si heterojunction increase significantly. Moreover, Er-doped MoS2 films exhibit strong light absorption and photoluminescence in the visible light range at room temperature; the intensity is enhanced by about twice that of the undoped film. The results indicate that the doping of MoS2 with Er can significantly improve the photoelectric characteristics and can be used to fabricate highly efficient luminescence and optoelectronic devices.

No MeSH data available.


Photocurrent I-V curves of the doped and undoped MoS2/Si heterojunction
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Fig6: Photocurrent I-V curves of the doped and undoped MoS2/Si heterojunction

Mentions: The photocurrent I-V behavior of the MoS2-Si heterojunction was obtained while irradiating the surface of the films by a standard white light with a power of 100 mW/cm2, as shown in Fig. 6. For two samples, the current increases exponentially with an increase in the voltage. The short-circuit currents (ISC) of the MoS2 and Er: MoS2 film samples are 0.392 and 4.35 mA, respectively, and the open-circuit voltage (UOC) is 49.98 and 90.02 mV, respectively. Obviously, after Er doping the short-circuit current and open-circuit voltage both increase significantly. This is because the doped Er ions will increase light absorption, resulting in an increase in the number of photo-generated carriers and finally enhancing the photocurrent response.Fig. 6


Improving the Photoelectric Characteristics of MoS 2 Thin Films by Doping Rare Earth Element Erbium
Photocurrent I-V curves of the doped and undoped MoS2/Si heterojunction
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

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getmorefigures.php?uid=PMC5120134&req=5

Fig6: Photocurrent I-V curves of the doped and undoped MoS2/Si heterojunction
Mentions: The photocurrent I-V behavior of the MoS2-Si heterojunction was obtained while irradiating the surface of the films by a standard white light with a power of 100 mW/cm2, as shown in Fig. 6. For two samples, the current increases exponentially with an increase in the voltage. The short-circuit currents (ISC) of the MoS2 and Er: MoS2 film samples are 0.392 and 4.35 mA, respectively, and the open-circuit voltage (UOC) is 49.98 and 90.02 mV, respectively. Obviously, after Er doping the short-circuit current and open-circuit voltage both increase significantly. This is because the doped Er ions will increase light absorption, resulting in an increase in the number of photo-generated carriers and finally enhancing the photocurrent response.Fig. 6

View Article: PubMed Central - PubMed

ABSTRACT

We investigated the surface morphologies, crystal structures, and optical characteristics of rare earth element erbium (Er)-doped MoS2 (Er: MoS2) thin films fabricated on Si substrates via chemical vapor deposition (CVD). The surface mopography, crystalline structure, light absorption property, and the photoelectronic characteristics of the Er: MoS2 films were studied. The results indicate that doping makes the crystallinity of MoS2 films better than that of the undoped film. Meanwhile, the electron mobility and conductivity of the Er-doped MoS2 films increase about one order of magnitude, and the current-voltage (I-V) and the photoelectric response characteristics of the Er:MoS2/Si heterojunction increase significantly. Moreover, Er-doped MoS2 films exhibit strong light absorption and photoluminescence in the visible light range at room temperature; the intensity is enhanced by about twice that of the undoped film. The results indicate that the doping of MoS2 with Er can significantly improve the photoelectric characteristics and can be used to fabricate highly efficient luminescence and optoelectronic devices.

No MeSH data available.