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Improving the Photoelectric Characteristics of MoS 2 Thin Films by Doping Rare Earth Element Erbium

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ABSTRACT

We investigated the surface morphologies, crystal structures, and optical characteristics of rare earth element erbium (Er)-doped MoS2 (Er: MoS2) thin films fabricated on Si substrates via chemical vapor deposition (CVD). The surface mopography, crystalline structure, light absorption property, and the photoelectronic characteristics of the Er: MoS2 films were studied. The results indicate that doping makes the crystallinity of MoS2 films better than that of the undoped film. Meanwhile, the electron mobility and conductivity of the Er-doped MoS2 films increase about one order of magnitude, and the current-voltage (I-V) and the photoelectric response characteristics of the Er:MoS2/Si heterojunction increase significantly. Moreover, Er-doped MoS2 films exhibit strong light absorption and photoluminescence in the visible light range at room temperature; the intensity is enhanced by about twice that of the undoped film. The results indicate that the doping of MoS2 with Er can significantly improve the photoelectric characteristics and can be used to fabricate highly efficient luminescence and optoelectronic devices.

No MeSH data available.


AFM images of MoS2 samples. a The MoS2 film. b The Er:MoS2 film
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Fig1: AFM images of MoS2 samples. a The MoS2 film. b The Er:MoS2 film

Mentions: The AFM images of the pure MoS2 and Er: MoS2 thin films on the Si substrates are shown in Fig. 1. The surface of the pure MoS2 film in Fig. 1a is a continuous film with an average thickness about 25 nm, and some quantum dots around 20 nm are uniformly scattered on the Si substrate. The Er: MoS2 film shown in Fig. 1b is a large fluctuation film composed of compact quantum dots with a uniform color, and the average thickness is about 50 nm. For the same deposition conditions and time, the density and size of the quantum dots in Er: MoS2 film increase remarkably resulting from the catalytic action of Er3+ on the deposition course.Fig. 1


Improving the Photoelectric Characteristics of MoS 2 Thin Films by Doping Rare Earth Element Erbium
AFM images of MoS2 samples. a The MoS2 film. b The Er:MoS2 film
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC5120134&req=5

Fig1: AFM images of MoS2 samples. a The MoS2 film. b The Er:MoS2 film
Mentions: The AFM images of the pure MoS2 and Er: MoS2 thin films on the Si substrates are shown in Fig. 1. The surface of the pure MoS2 film in Fig. 1a is a continuous film with an average thickness about 25 nm, and some quantum dots around 20 nm are uniformly scattered on the Si substrate. The Er: MoS2 film shown in Fig. 1b is a large fluctuation film composed of compact quantum dots with a uniform color, and the average thickness is about 50 nm. For the same deposition conditions and time, the density and size of the quantum dots in Er: MoS2 film increase remarkably resulting from the catalytic action of Er3+ on the deposition course.Fig. 1

View Article: PubMed Central - PubMed

ABSTRACT

We investigated the surface morphologies, crystal structures, and optical characteristics of rare earth element erbium (Er)-doped MoS2 (Er: MoS2) thin films fabricated on Si substrates via chemical vapor deposition (CVD). The surface mopography, crystalline structure, light absorption property, and the photoelectronic characteristics of the Er: MoS2 films were studied. The results indicate that doping makes the crystallinity of MoS2 films better than that of the undoped film. Meanwhile, the electron mobility and conductivity of the Er-doped MoS2 films increase about one order of magnitude, and the current-voltage (I-V) and the photoelectric response characteristics of the Er:MoS2/Si heterojunction increase significantly. Moreover, Er-doped MoS2 films exhibit strong light absorption and photoluminescence in the visible light range at room temperature; the intensity is enhanced by about twice that of the undoped film. The results indicate that the doping of MoS2 with Er can significantly improve the photoelectric characteristics and can be used to fabricate highly efficient luminescence and optoelectronic devices.

No MeSH data available.