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Gate-Controlled WSe 2 Transistors Using a Buried Triple-Gate Structure

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ABSTRACT

In the present paper, we show tungsten diselenide (WSe2) devices that can be tuned to operate as n-type and p-type field-effect transistors (FETs) as well as band-to-band tunnel transistors on the same flake. Source, channel, and drain areas of the WSe2 flake are adjusted, using buried triple-gate substrates with three independently controllable gates. The device characteristics found in the tunnel transistor configuration are determined by the particular geometry of the buried triple-gate structure, consistent with a simple estimation of the expected off-state behavior.

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Fabrication process of WSe2 devices on the LOCOS BTG structure: a Exfoliation of WSe2 flakes on the structure, b visibility simulation, c fabrication of source/drain contacts, and d AFM surface profile to determine the thickness of the flake
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Fig2: Fabrication process of WSe2 devices on the LOCOS BTG structure: a Exfoliation of WSe2 flakes on the structure, b visibility simulation, c fabrication of source/drain contacts, and d AFM surface profile to determine the thickness of the flake

Mentions: For the fabrication of the WSe2 devices on the BTG structure, first, WSe2 is exfoliated from bulk material using a blue tack tape. Figure 2a shows a section of a BTG meander with additional electron-beam lithography markers. The sample is inspected using optical microscopy in order to identify thin flakes (<10 nm) lying across the aluminum gate, e.g., a flake as in location (I.). Thin flakes were found to exhibit a characteristic yellowish color on the gate region (Al2O3/Al) with a strong contrast to thicker flakes of ~15–25 nm, which appear distinctly blue-colored (cf. locations (II.) and (III.)). Interestingly, such a clear distinction is not present on the side-gate region (Al2O3/SiO2/Si/SiO2/Si). The characteristic swing from blue to yellowish colors identifying the thinnest flakes is also confirmed by our simulations, as shown in Fig. 2b [34].Fig. 2


Gate-Controlled WSe 2 Transistors Using a Buried Triple-Gate Structure
Fabrication process of WSe2 devices on the LOCOS BTG structure: a Exfoliation of WSe2 flakes on the structure, b visibility simulation, c fabrication of source/drain contacts, and d AFM surface profile to determine the thickness of the flake
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC5120059&req=5

Fig2: Fabrication process of WSe2 devices on the LOCOS BTG structure: a Exfoliation of WSe2 flakes on the structure, b visibility simulation, c fabrication of source/drain contacts, and d AFM surface profile to determine the thickness of the flake
Mentions: For the fabrication of the WSe2 devices on the BTG structure, first, WSe2 is exfoliated from bulk material using a blue tack tape. Figure 2a shows a section of a BTG meander with additional electron-beam lithography markers. The sample is inspected using optical microscopy in order to identify thin flakes (<10 nm) lying across the aluminum gate, e.g., a flake as in location (I.). Thin flakes were found to exhibit a characteristic yellowish color on the gate region (Al2O3/Al) with a strong contrast to thicker flakes of ~15–25 nm, which appear distinctly blue-colored (cf. locations (II.) and (III.)). Interestingly, such a clear distinction is not present on the side-gate region (Al2O3/SiO2/Si/SiO2/Si). The characteristic swing from blue to yellowish colors identifying the thinnest flakes is also confirmed by our simulations, as shown in Fig. 2b [34].Fig. 2

View Article: PubMed Central - PubMed

ABSTRACT

In the present paper, we show tungsten diselenide (WSe2) devices that can be tuned to operate as n-type and p-type field-effect transistors (FETs) as well as band-to-band tunnel transistors on the same flake. Source, channel, and drain areas of the WSe2 flake are adjusted, using buried triple-gate substrates with three independently controllable gates. The device characteristics found in the tunnel transistor configuration are determined by the particular geometry of the buried triple-gate structure, consistent with a simple estimation of the expected off-state behavior.

No MeSH data available.


Related in: MedlinePlus