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The Luminescent Inhomogeneity and the Distribution of Zinc Vacancy-Related Acceptor-Like Defects in N-Doped ZnO Microrods

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ABSTRACT

Vertically aligned N-doped ZnO microrods with a hexagonal symmetry were fabricated via the chemical vapor transport with abundant N2O as both O and N precursors. We have demonstrated the suppression of the zinc interstitial-related shallow donor defects and have identified the zinc vacancy-related shallow and deep acceptor states by temperature variable photoluminescence in O-rich growth environment. Through spatially resolved cathodoluminescence spectra, we found the luminescent inhomogeneity in the sample with a core-shell structure. The deep acceptor-isolated VZn and the shallow acceptor VZn-related complex or clusters mainly distribute in the shell region.

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The CL spectra taken at 100 K in spot mode at the center of the N-doped ZnO MR with five different acceleration voltages of 3, 6, 9, 12, and 15 kV. The inset shows the integrated intensity ratio of eA0/FX and GB/FX as a function of the accelerating voltage (i.e., detection depth)
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Fig7: The CL spectra taken at 100 K in spot mode at the center of the N-doped ZnO MR with five different acceleration voltages of 3, 6, 9, 12, and 15 kV. The inset shows the integrated intensity ratio of eA0/FX and GB/FX as a function of the accelerating voltage (i.e., detection depth)

Mentions: In fact, the inhomogeneous distribution of the acceptor-like defects occurs not only between the center and edge of the MRs but also between the top surface and the bulk underneath the surface. To attest this issue, depth-resolved CL measurement at 100 K has been carried out with various acceleration voltages at the center point. Figure 7 shows the CL spectra recorded at five different acceleration voltages of 3, 6, 9, 12, and 15 kV, which correspond to the respective average generation depths of 40, 110, 210, 340, and 500 nm in ZnO material, according to the calculation results through the Monte-Carlo simulation CASINO in literature [43]. As plotted in the inset of Fig. 7, the integrated intensity ratio of eA0/FX and GB/FX both decreases with increasing acceleration voltage due to the core of the N-doped ZnO MR has relatively less VZn-related acceptor-like complexes.Fig. 7


The Luminescent Inhomogeneity and the Distribution of Zinc Vacancy-Related Acceptor-Like Defects in N-Doped ZnO Microrods
The CL spectra taken at 100 K in spot mode at the center of the N-doped ZnO MR with five different acceleration voltages of 3, 6, 9, 12, and 15 kV. The inset shows the integrated intensity ratio of eA0/FX and GB/FX as a function of the accelerating voltage (i.e., detection depth)
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC5120051&req=5

Fig7: The CL spectra taken at 100 K in spot mode at the center of the N-doped ZnO MR with five different acceleration voltages of 3, 6, 9, 12, and 15 kV. The inset shows the integrated intensity ratio of eA0/FX and GB/FX as a function of the accelerating voltage (i.e., detection depth)
Mentions: In fact, the inhomogeneous distribution of the acceptor-like defects occurs not only between the center and edge of the MRs but also between the top surface and the bulk underneath the surface. To attest this issue, depth-resolved CL measurement at 100 K has been carried out with various acceleration voltages at the center point. Figure 7 shows the CL spectra recorded at five different acceleration voltages of 3, 6, 9, 12, and 15 kV, which correspond to the respective average generation depths of 40, 110, 210, 340, and 500 nm in ZnO material, according to the calculation results through the Monte-Carlo simulation CASINO in literature [43]. As plotted in the inset of Fig. 7, the integrated intensity ratio of eA0/FX and GB/FX both decreases with increasing acceleration voltage due to the core of the N-doped ZnO MR has relatively less VZn-related acceptor-like complexes.Fig. 7

View Article: PubMed Central - PubMed

ABSTRACT

Vertically aligned N-doped ZnO microrods with a hexagonal symmetry were fabricated via the chemical vapor transport with abundant N2O as both O and N precursors. We have demonstrated the suppression of the zinc interstitial-related shallow donor defects and have identified the zinc vacancy-related shallow and deep acceptor states by temperature variable photoluminescence in O-rich growth environment. Through spatially resolved cathodoluminescence spectra, we found the luminescent inhomogeneity in the sample with a core-shell structure. The deep acceptor-isolated VZn and the shallow acceptor VZn-related complex or clusters mainly distribute in the shell region.

No MeSH data available.


Related in: MedlinePlus