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Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

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ABSTRACT

Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

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(a) Temperature dependence of the total electrical conductivity of SDC and YSZ thin films grown on the MgO + BZO + STO template platform. The calculated activation energies are 0.69 and 1.02 eV for SDC and YSZ, respectively. (b) Comparison of the Nyquist plots of the YSZ film at the lowest measured temperature (the larger value of resistance) and the BZO/STO superlattice (20 bilayers) at the highest temperature (the smaller value of resistance).
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Figure 6: (a) Temperature dependence of the total electrical conductivity of SDC and YSZ thin films grown on the MgO + BZO + STO template platform. The calculated activation energies are 0.69 and 1.02 eV for SDC and YSZ, respectively. (b) Comparison of the Nyquist plots of the YSZ film at the lowest measured temperature (the larger value of resistance) and the BZO/STO superlattice (20 bilayers) at the highest temperature (the smaller value of resistance).

Mentions: Figure 6(a) shows the in-plane electrical conductivities of the SDC and YSZ films that were measured by EIS in the temperature range between 400 and 700 °C in air using two Pt electrodes at a distance of about 1 mm deposited onto the surface of the films. The SDC film showed activation energy of about 0.69 eV while for the YSZ film an activation energy of about 1.02 eV was measured.


Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering
(a) Temperature dependence of the total electrical conductivity of SDC and YSZ thin films grown on the MgO + BZO + STO template platform. The calculated activation energies are 0.69 and 1.02 eV for SDC and YSZ, respectively. (b) Comparison of the Nyquist plots of the YSZ film at the lowest measured temperature (the larger value of resistance) and the BZO/STO superlattice (20 bilayers) at the highest temperature (the smaller value of resistance).
© Copyright Policy - open-access
Related In: Results  -  Collection

License 1 - License 2
Show All Figures
getmorefigures.php?uid=PMC5036489&req=5

Figure 6: (a) Temperature dependence of the total electrical conductivity of SDC and YSZ thin films grown on the MgO + BZO + STO template platform. The calculated activation energies are 0.69 and 1.02 eV for SDC and YSZ, respectively. (b) Comparison of the Nyquist plots of the YSZ film at the lowest measured temperature (the larger value of resistance) and the BZO/STO superlattice (20 bilayers) at the highest temperature (the smaller value of resistance).
Mentions: Figure 6(a) shows the in-plane electrical conductivities of the SDC and YSZ films that were measured by EIS in the temperature range between 400 and 700 °C in air using two Pt electrodes at a distance of about 1 mm deposited onto the surface of the films. The SDC film showed activation energy of about 0.69 eV while for the YSZ film an activation energy of about 1.02 eV was measured.

View Article: PubMed Central - PubMed

ABSTRACT

Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

No MeSH data available.


Related in: MedlinePlus