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Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

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ABSTRACT

Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

No MeSH data available.


HR-TEM image of an SDC film grown on the MgO + BZO + STO template platform (a). The SDC layer can be used for the highly ordered growth of YSZ thin films (b).
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Figure 4: HR-TEM image of an SDC film grown on the MgO + BZO + STO template platform (a). The SDC layer can be used for the highly ordered growth of YSZ thin films (b).

Mentions: Highly ordered SDC films and SDC/YSZ heterostructures were grown on the MgO + BZO + STO template platform, as demonstrated by figure 4(a) showing the HR-TEM cross section image of an SDC/YSZ heterostructure in the region of the double buffer layer, and by figure 5(a) showing the XRD analysis of one of the SDC films, about 200 nm thick, used for the EIS characterization. The thicknesses of the BZO and STO buffer layers of the template platform used for the electrical characterizations were about 5 nm.


Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering
HR-TEM image of an SDC film grown on the MgO + BZO + STO template platform (a). The SDC layer can be used for the highly ordered growth of YSZ thin films (b).
© Copyright Policy - open-access
Related In: Results  -  Collection

License 1 - License 2
Show All Figures
getmorefigures.php?uid=PMC5036489&req=5

Figure 4: HR-TEM image of an SDC film grown on the MgO + BZO + STO template platform (a). The SDC layer can be used for the highly ordered growth of YSZ thin films (b).
Mentions: Highly ordered SDC films and SDC/YSZ heterostructures were grown on the MgO + BZO + STO template platform, as demonstrated by figure 4(a) showing the HR-TEM cross section image of an SDC/YSZ heterostructure in the region of the double buffer layer, and by figure 5(a) showing the XRD analysis of one of the SDC films, about 200 nm thick, used for the EIS characterization. The thicknesses of the BZO and STO buffer layers of the template platform used for the electrical characterizations were about 5 nm.

View Article: PubMed Central - PubMed

ABSTRACT

Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

No MeSH data available.