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Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering

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ABSTRACT

Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

No MeSH data available.


2θ/θ scan plot of a 250 Å thick film of BZO on MgO. The inset shows a magnification of the angular region around the (002) peak and the fit (red line) of the interference fringes calculated for a film thickness of 57 unit cells.
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Figure 2: 2θ/θ scan plot of a 250 Å thick film of BZO on MgO. The inset shows a magnification of the angular region around the (002) peak and the fit (red line) of the interference fringes calculated for a film thickness of 57 unit cells.

Mentions: Figure 2 shows the XRD plot of a BZO film grown on MgO. The film is about 250 Å thick, as measured by XRR. Size effect interference fringes are visible around the (002) reflection line of BZO/MgO indicating a good interface quality. The relative spacing between the interference fringes is consistent with a film thickness of about 57 unit cells (≈239 Å), in good agreement with the XRR estimation of the thickness.


Probing the bulk ionic conductivity by thin film hetero-epitaxial engineering
2θ/θ scan plot of a 250 Å thick film of BZO on MgO. The inset shows a magnification of the angular region around the (002) peak and the fit (red line) of the interference fringes calculated for a film thickness of 57 unit cells.
© Copyright Policy - open-access
Related In: Results  -  Collection

License 1 - License 2
Show All Figures
getmorefigures.php?uid=PMC5036489&req=5

Figure 2: 2θ/θ scan plot of a 250 Å thick film of BZO on MgO. The inset shows a magnification of the angular region around the (002) peak and the fit (red line) of the interference fringes calculated for a film thickness of 57 unit cells.
Mentions: Figure 2 shows the XRD plot of a BZO film grown on MgO. The film is about 250 Å thick, as measured by XRR. Size effect interference fringes are visible around the (002) reflection line of BZO/MgO indicating a good interface quality. The relative spacing between the interference fringes is consistent with a film thickness of about 57 unit cells (≈239 Å), in good agreement with the XRR estimation of the thickness.

View Article: PubMed Central - PubMed

ABSTRACT

Highly textured thin films with small grain boundary regions can be used as model systems to directly measure the bulk conductivity of oxygen ion conducting oxides. Ionic conducting thin films and epitaxial heterostructures are also widely used to probe the effect of strain on the oxygen ion migration in oxide materials. For the purpose of these investigations a good lattice matching between the film and the substrate is required to promote the ordered film growth. Moreover, the substrate should be a good electrical insulator at high temperature to allow a reliable electrical characterization of the deposited film. Here we report the fabrication of an epitaxial heterostructure made with a double buffer layer of BaZrO3 and SrTiO3 grown on MgO substrates that fulfills both requirements. Based on such template platform, highly ordered (001) epitaxially oriented thin films of 15% Sm-doped CeO2 and 8 mol% Y2O3 stabilized ZrO2 are grown. Bulk conductivities as well as activation energies are measured for both materials, confirming the success of the approach. The reported insulating template platform promises potential application also for the electrical characterization of other novel electrolyte materials that still need a thorough understanding of their ionic conductivity.

No MeSH data available.