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Planar silver nanowire, carbon nanotube and PEDOT:PSS nanocomposite transparent electrodes

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ABSTRACT

Highly conductive, transparent and flexible planar electrodes were fabricated using interwoven silver nanowires and single-walled carbon nanotubes (AgNW:SWCNT) in a PEDOT:PSS matrix via an epoxy transfer method from a silicon template. The planar electrodes achieved a sheet resistance of 6.6 ± 0.0 Ω/□ and an average transmission of 86% between 400 and 800 nm. A high figure of merit of 367 Ω−1 is reported for the electrodes, which is much higher than that measured for indium tin oxide and reported for other AgNW composites. The AgNW:SWCNT:PEDOT:PSS electrode was used to fabricate low temperature (annealing free) devices demonstrating their potential to function with a range of organic semiconducting polymer:fullerene bulk heterojunction blend systems.

No MeSH data available.


J–V characteristics of best OPV devices on planarized AgNW:SWCNT:PEDOT:PSS nanocomposite transparent electrodes and ITO with P3HT:PC60BM and PCDTBT:PC70BM active layers and performance parameters. Inset shows structure of an OPV device.
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Figure 6: J–V characteristics of best OPV devices on planarized AgNW:SWCNT:PEDOT:PSS nanocomposite transparent electrodes and ITO with P3HT:PC60BM and PCDTBT:PC70BM active layers and performance parameters. Inset shows structure of an OPV device.

Mentions: For testing the AgNW:SWCNT:PEDOT:PSS electrodes in devices, two types of cells were fabricated using two different organic semiconductor blends. The devices had the following structures: (1) glass/AgNW:SWCNT/MoOx/poly(3-n-hexylthiophene-2, 5-diyl) (P3HT):phenyl-C61-butyric acid methyl ester (PC60BM)/Al, and (2) glass/AgNW:SWCNT/MoOx/poly(N-9″-heptadecanyl-2, 7-carbazole-alt-5, 5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)) (PCDTBT):(6, 6)-phenyl C70-butyric acid methyl ester (PC70BM)/Al. The device structures are inset into figure 6. For comparison, devices of the same structure were also fabricated on commercial ITO.


Planar silver nanowire, carbon nanotube and PEDOT:PSS nanocomposite transparent electrodes
J–V characteristics of best OPV devices on planarized AgNW:SWCNT:PEDOT:PSS nanocomposite transparent electrodes and ITO with P3HT:PC60BM and PCDTBT:PC70BM active layers and performance parameters. Inset shows structure of an OPV device.
© Copyright Policy - open-access
Related In: Results  -  Collection

License 1 - License 2
Show All Figures
getmorefigures.php?uid=PMC5036479&req=5

Figure 6: J–V characteristics of best OPV devices on planarized AgNW:SWCNT:PEDOT:PSS nanocomposite transparent electrodes and ITO with P3HT:PC60BM and PCDTBT:PC70BM active layers and performance parameters. Inset shows structure of an OPV device.
Mentions: For testing the AgNW:SWCNT:PEDOT:PSS electrodes in devices, two types of cells were fabricated using two different organic semiconductor blends. The devices had the following structures: (1) glass/AgNW:SWCNT/MoOx/poly(3-n-hexylthiophene-2, 5-diyl) (P3HT):phenyl-C61-butyric acid methyl ester (PC60BM)/Al, and (2) glass/AgNW:SWCNT/MoOx/poly(N-9″-heptadecanyl-2, 7-carbazole-alt-5, 5-(4′,7′-di-2-thienyl-2′,1′,3′-benzothiadiazole)) (PCDTBT):(6, 6)-phenyl C70-butyric acid methyl ester (PC70BM)/Al. The device structures are inset into figure 6. For comparison, devices of the same structure were also fabricated on commercial ITO.

View Article: PubMed Central - PubMed

ABSTRACT

Highly conductive, transparent and flexible planar electrodes were fabricated using interwoven silver nanowires and single-walled carbon nanotubes (AgNW:SWCNT) in a PEDOT:PSS matrix via an epoxy transfer method from a silicon template. The planar electrodes achieved a sheet resistance of 6.6 ± 0.0 Ω/□ and an average transmission of 86% between 400 and 800 nm. A high figure of merit of 367 Ω−1 is reported for the electrodes, which is much higher than that measured for indium tin oxide and reported for other AgNW composites. The AgNW:SWCNT:PEDOT:PSS electrode was used to fabricate low temperature (annealing free) devices demonstrating their potential to function with a range of organic semiconducting polymer:fullerene bulk heterojunction blend systems.

No MeSH data available.