Limits...
Wurtzite-derived ternary I – III – O 2 semiconductors

View Article: PubMed Central - PubMed

ABSTRACT

Ternary zincblende-derived I–III–VI2 chalcogenide and II–IV–V2 pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I–III–O2 oxide semiconductors with a wurtzite-derived β-NaFeO2 structure are limited. Wurtzite-derived β-LiGaO2 and β-AgGaO2 form alloys with ZnO and the band gap of ZnO can be controlled to include the visible and ultraviolet regions. β-CuGaO2, which has a direct band gap of 1.47 eV, has been proposed for use as a light absorber in thin film solar cells. These ternary oxides may thus allow new applications for oxide semiconductors. However, information about wurtzite-derived ternary I–III–O2 semiconductors is still limited. In this paper we review previous studies on β-LiGaO2, β-AgGaO2 and β-CuGaO2 to determine guiding principles for the development of wurtzite-derived I–III–O2 semiconductors.

No MeSH data available.


Band gap versus pseudo-wurtzite lattice parameter, a0, for binary and ternary wurtzite-type oxide semiconductors.
© Copyright Policy - open-access
Related In: Results  -  Collection

License 1 - License 2
getmorefigures.php?uid=PMC5036475&req=5

Figure 8: Band gap versus pseudo-wurtzite lattice parameter, a0, for binary and ternary wurtzite-type oxide semiconductors.

Mentions: Wurtzite-derived ternary I–III–O2 semiconductors have expanded the energy range that oxide semiconductors cover as shown in figure 8. The included range is not only the UV region but also the visible and near-infrared regions. This is similar to II–VI chalcogenides and III–V pnictide semiconductors. The electronic transport properties of oxides are limited compared with chalcogenides and pnictides because of their ionic nature. However, oxides have some advantages over chalcogenides and pnictides, such as their abundance and the non-toxicity of oxygen. Additionally, oxides maintain excellent stability in air and water under ambient conditions. Consequently, oxide semiconductors are very attractive materials for optoelectronic applications that work in the visible to the near-infrared region in addition to the visible to UV region.


Wurtzite-derived ternary I – III – O 2 semiconductors
Band gap versus pseudo-wurtzite lattice parameter, a0, for binary and ternary wurtzite-type oxide semiconductors.
© Copyright Policy - open-access
Related In: Results  -  Collection

License 1 - License 2
Show All Figures
getmorefigures.php?uid=PMC5036475&req=5

Figure 8: Band gap versus pseudo-wurtzite lattice parameter, a0, for binary and ternary wurtzite-type oxide semiconductors.
Mentions: Wurtzite-derived ternary I–III–O2 semiconductors have expanded the energy range that oxide semiconductors cover as shown in figure 8. The included range is not only the UV region but also the visible and near-infrared regions. This is similar to II–VI chalcogenides and III–V pnictide semiconductors. The electronic transport properties of oxides are limited compared with chalcogenides and pnictides because of their ionic nature. However, oxides have some advantages over chalcogenides and pnictides, such as their abundance and the non-toxicity of oxygen. Additionally, oxides maintain excellent stability in air and water under ambient conditions. Consequently, oxide semiconductors are very attractive materials for optoelectronic applications that work in the visible to the near-infrared region in addition to the visible to UV region.

View Article: PubMed Central - PubMed

ABSTRACT

Ternary zincblende-derived I–III–VI2 chalcogenide and II–IV–V2 pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I–III–O2 oxide semiconductors with a wurtzite-derived β-NaFeO2 structure are limited. Wurtzite-derived β-LiGaO2 and β-AgGaO2 form alloys with ZnO and the band gap of ZnO can be controlled to include the visible and ultraviolet regions. β-CuGaO2, which has a direct band gap of 1.47 eV, has been proposed for use as a light absorber in thin film solar cells. These ternary oxides may thus allow new applications for oxide semiconductors. However, information about wurtzite-derived ternary I–III–O2 semiconductors is still limited. In this paper we review previous studies on β-LiGaO2, β-AgGaO2 and β-CuGaO2 to determine guiding principles for the development of wurtzite-derived I–III–O2 semiconductors.

No MeSH data available.