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Wurtzite-derived ternary I – III – O 2 semiconductors

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ABSTRACT

Ternary zincblende-derived I–III–VI2 chalcogenide and II–IV–V2 pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I–III–O2 oxide semiconductors with a wurtzite-derived β-NaFeO2 structure are limited. Wurtzite-derived β-LiGaO2 and β-AgGaO2 form alloys with ZnO and the band gap of ZnO can be controlled to include the visible and ultraviolet regions. β-CuGaO2, which has a direct band gap of 1.47 eV, has been proposed for use as a light absorber in thin film solar cells. These ternary oxides may thus allow new applications for oxide semiconductors. However, information about wurtzite-derived ternary I–III–O2 semiconductors is still limited. In this paper we review previous studies on β-LiGaO2, β-AgGaO2 and β-CuGaO2 to determine guiding principles for the development of wurtzite-derived I–III–O2 semiconductors.

No MeSH data available.


Optical absorption spectrum, F(Rd) of β-CuGaO2 obtained from the diffuse reflection, Rd, using the Kubelka–Munk function. Insets are a picture of powdered β-CuGaO2 and the theoretical conversion efficiency of a single-junction solar cell as a function of the band gap energy based on the Shockley–Queisser limit using the AM1.5G solar spectrum as the illumination source.
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Figure 6: Optical absorption spectrum, F(Rd) of β-CuGaO2 obtained from the diffuse reflection, Rd, using the Kubelka–Munk function. Insets are a picture of powdered β-CuGaO2 and the theoretical conversion efficiency of a single-junction solar cell as a function of the band gap energy based on the Shockley–Queisser limit using the AM1.5G solar spectrum as the illumination source.

Mentions: The solid state reaction at high temperatures between Cu2O and Ga2O3 results in delafossite α-CuGaO2. Wurtzite-derived β-CuGaO2 (the space group Pna21) can be obtained by an ion-exchange of Na+ ions in the precursor β-NaGaO2 with Cu+ ions in CuCl under an evacuated atmosphere to avoid the oxidation of Cu+ to Cu2+ [29, 62]. β-CuGaO2 is a black material and its absorption edge appears at 1.47 eV in the near-infrared region as shown in figure 6. Oxide semiconductors are mainly wide band gap materials, and this is an important feature for their use in oxide semiconductors. β-CuGaO2 is a rare oxide semiconductor with a narrow band gap in the near-infrared region unlike the common oxide semiconductors.


Wurtzite-derived ternary I – III – O 2 semiconductors
Optical absorption spectrum, F(Rd) of β-CuGaO2 obtained from the diffuse reflection, Rd, using the Kubelka–Munk function. Insets are a picture of powdered β-CuGaO2 and the theoretical conversion efficiency of a single-junction solar cell as a function of the band gap energy based on the Shockley–Queisser limit using the AM1.5G solar spectrum as the illumination source.
© Copyright Policy - open-access
Related In: Results  -  Collection

License 1 - License 2
Show All Figures
getmorefigures.php?uid=PMC5036475&req=5

Figure 6: Optical absorption spectrum, F(Rd) of β-CuGaO2 obtained from the diffuse reflection, Rd, using the Kubelka–Munk function. Insets are a picture of powdered β-CuGaO2 and the theoretical conversion efficiency of a single-junction solar cell as a function of the band gap energy based on the Shockley–Queisser limit using the AM1.5G solar spectrum as the illumination source.
Mentions: The solid state reaction at high temperatures between Cu2O and Ga2O3 results in delafossite α-CuGaO2. Wurtzite-derived β-CuGaO2 (the space group Pna21) can be obtained by an ion-exchange of Na+ ions in the precursor β-NaGaO2 with Cu+ ions in CuCl under an evacuated atmosphere to avoid the oxidation of Cu+ to Cu2+ [29, 62]. β-CuGaO2 is a black material and its absorption edge appears at 1.47 eV in the near-infrared region as shown in figure 6. Oxide semiconductors are mainly wide band gap materials, and this is an important feature for their use in oxide semiconductors. β-CuGaO2 is a rare oxide semiconductor with a narrow band gap in the near-infrared region unlike the common oxide semiconductors.

View Article: PubMed Central - PubMed

ABSTRACT

Ternary zincblende-derived I–III–VI2 chalcogenide and II–IV–V2 pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I–III–O2 oxide semiconductors with a wurtzite-derived β-NaFeO2 structure are limited. Wurtzite-derived β-LiGaO2 and β-AgGaO2 form alloys with ZnO and the band gap of ZnO can be controlled to include the visible and ultraviolet regions. β-CuGaO2, which has a direct band gap of 1.47 eV, has been proposed for use as a light absorber in thin film solar cells. These ternary oxides may thus allow new applications for oxide semiconductors. However, information about wurtzite-derived ternary I–III–O2 semiconductors is still limited. In this paper we review previous studies on β-LiGaO2, β-AgGaO2 and β-CuGaO2 to determine guiding principles for the development of wurtzite-derived I–III–O2 semiconductors.

No MeSH data available.