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Wurtzite-derived ternary I – III – O 2 semiconductors

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ABSTRACT

Ternary zincblende-derived I–III–VI2 chalcogenide and II–IV–V2 pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I–III–O2 oxide semiconductors with a wurtzite-derived β-NaFeO2 structure are limited. Wurtzite-derived β-LiGaO2 and β-AgGaO2 form alloys with ZnO and the band gap of ZnO can be controlled to include the visible and ultraviolet regions. β-CuGaO2, which has a direct band gap of 1.47 eV, has been proposed for use as a light absorber in thin film solar cells. These ternary oxides may thus allow new applications for oxide semiconductors. However, information about wurtzite-derived ternary I–III–O2 semiconductors is still limited. In this paper we review previous studies on β-LiGaO2, β-AgGaO2 and β-CuGaO2 to determine guiding principles for the development of wurtzite-derived I–III–O2 semiconductors.

No MeSH data available.


Schematic of (a) β-NaFeO2 and (b) wurtzite structures.
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Figure 1: Schematic of (a) β-NaFeO2 and (b) wurtzite structures.

Mentions: For chalcogenide semiconductors, ternary I–III–VI2 chalcopyrite semiconductors such as CuInS2 and CuGaSe2 have been extensively studied [12–14]. The band gap engineering of II–VI zincblende chalcogenides alloyed with I–III–VI2 chalcopyrite chalcogenides has also been studied [15–21]. The chalcopyrite structure is a binary zincblende superstructure [22] where two divalent cations in a II–VI zincblende material are replaced by a monovalent and a trivalent cations. A similar superstructure with a specific relationship between the zincblende and chalcopyrite structures is found in the wurtzite structure of wurtzite-derived β-NaFeO2 structure [23]. Here, monovalent and trivalent cations occupy the divalent cation site in the wurtzite structure, and both cations have a four-fold tetrahedral coordination to oxygen atoms in addition to an ordered arrangement, as schematically shown in figure 1. Based on the structural similarity between β-NaFeO2 and the wurtzite structure, the alloying of ZnO with ternary oxides possessing the β-NaFeO2 structure is expected to occur over a wide composition range. This is preferred over alloying with binary oxides that possess a rock-salt structure such as MgO and CdO. The possible energy range of the band gap engineering of ZnO is expected to increase upon alloying with the ternary oxides. Whereas research into the chalcogenide I–III–VI2 chalcopyrite semiconductors has been much active, and even ternary II–IV–N2 nitrides such as ZnGeN2 and ZnSnN2 have recently been studied extensively [24–26], ternary I–III–O2 semiconductors with a wurtzite-derived β-NaFeO2 structure have received little attention.


Wurtzite-derived ternary I – III – O 2 semiconductors
Schematic of (a) β-NaFeO2 and (b) wurtzite structures.
© Copyright Policy - open-access
Related In: Results  -  Collection

License 1 - License 2
Show All Figures
getmorefigures.php?uid=PMC5036475&req=5

Figure 1: Schematic of (a) β-NaFeO2 and (b) wurtzite structures.
Mentions: For chalcogenide semiconductors, ternary I–III–VI2 chalcopyrite semiconductors such as CuInS2 and CuGaSe2 have been extensively studied [12–14]. The band gap engineering of II–VI zincblende chalcogenides alloyed with I–III–VI2 chalcopyrite chalcogenides has also been studied [15–21]. The chalcopyrite structure is a binary zincblende superstructure [22] where two divalent cations in a II–VI zincblende material are replaced by a monovalent and a trivalent cations. A similar superstructure with a specific relationship between the zincblende and chalcopyrite structures is found in the wurtzite structure of wurtzite-derived β-NaFeO2 structure [23]. Here, monovalent and trivalent cations occupy the divalent cation site in the wurtzite structure, and both cations have a four-fold tetrahedral coordination to oxygen atoms in addition to an ordered arrangement, as schematically shown in figure 1. Based on the structural similarity between β-NaFeO2 and the wurtzite structure, the alloying of ZnO with ternary oxides possessing the β-NaFeO2 structure is expected to occur over a wide composition range. This is preferred over alloying with binary oxides that possess a rock-salt structure such as MgO and CdO. The possible energy range of the band gap engineering of ZnO is expected to increase upon alloying with the ternary oxides. Whereas research into the chalcogenide I–III–VI2 chalcopyrite semiconductors has been much active, and even ternary II–IV–N2 nitrides such as ZnGeN2 and ZnSnN2 have recently been studied extensively [24–26], ternary I–III–O2 semiconductors with a wurtzite-derived β-NaFeO2 structure have received little attention.

View Article: PubMed Central - PubMed

ABSTRACT

Ternary zincblende-derived I–III–VI2 chalcogenide and II–IV–V2 pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I–III–O2 oxide semiconductors with a wurtzite-derived β-NaFeO2 structure are limited. Wurtzite-derived β-LiGaO2 and β-AgGaO2 form alloys with ZnO and the band gap of ZnO can be controlled to include the visible and ultraviolet regions. β-CuGaO2, which has a direct band gap of 1.47 eV, has been proposed for use as a light absorber in thin film solar cells. These ternary oxides may thus allow new applications for oxide semiconductors. However, information about wurtzite-derived ternary I–III–O2 semiconductors is still limited. In this paper we review previous studies on β-LiGaO2, β-AgGaO2 and β-CuGaO2 to determine guiding principles for the development of wurtzite-derived I–III–O2 semiconductors.

No MeSH data available.