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Dissipation induced by phonon elastic scattering in crystals

View Article: PubMed Central - PubMed

ABSTRACT

We demonstrate that the phonon elastic scattering leads to a dominant dissipation in crystals at low temperature. The two-level systems (TLSs) should be responsible for the elastic scattering, whereas the dissipation induced by static-point defects (SPDs) can not be neglected. One purpose of this work is to show how the energy splitting distribution of the TLS ensemble affects the dissipation. Besides, this article displays the proportion of phonon-TLS elastic scattering to total phonon dissipation. The coupling coefficient of phonon-SPD scattering and the constant P0 of the TLS distribution are important that we estimate their magnitudes in this paper. Our results is useful to understand the phonon dissipation mechanism, and give some clues to improve the performance of mechanical resonators, apply the desired defects, or reveal the atom configuration in lattice structure of disordered crystals.

No MeSH data available.


The distribution constant P0 as a function of νi and Δν.The unit of P0 is 1050 J−1 m−3, while the units of νi and Δν are both GHz. The color indicates the magnitude of P0.
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f6: The distribution constant P0 as a function of νi and Δν.The unit of P0 is 1050 J−1 m−3, while the units of νi and Δν are both GHz. The color indicates the magnitude of P0.

Mentions: The Fig. 6 plots the magnitude of constant P0 and its dependence on both νi and Δν. If νi is low with narrow or wide range Δν, P0 is turned out to be suppressed highly, especially in wide range case. Despite all this, P0 still gets large with νi rising, and this increase is highly rapid for extremely narrow spectrums of transition frequency ν. On the other hand, as the density of the transition frequency, the constant P0 also tends to be larger in the case that the spectrum of transition frequency ν is narrower at a given νi, and this parameter increases more steeply as νi enter higher region. In general, the magnitude of P0 increases rapidly as the transition frequencies of the TLS ensemble turn to highly concentrate in high regime.


Dissipation induced by phonon elastic scattering in crystals
The distribution constant P0 as a function of νi and Δν.The unit of P0 is 1050 J−1 m−3, while the units of νi and Δν are both GHz. The color indicates the magnitude of P0.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC5036349&req=5

f6: The distribution constant P0 as a function of νi and Δν.The unit of P0 is 1050 J−1 m−3, while the units of νi and Δν are both GHz. The color indicates the magnitude of P0.
Mentions: The Fig. 6 plots the magnitude of constant P0 and its dependence on both νi and Δν. If νi is low with narrow or wide range Δν, P0 is turned out to be suppressed highly, especially in wide range case. Despite all this, P0 still gets large with νi rising, and this increase is highly rapid for extremely narrow spectrums of transition frequency ν. On the other hand, as the density of the transition frequency, the constant P0 also tends to be larger in the case that the spectrum of transition frequency ν is narrower at a given νi, and this parameter increases more steeply as νi enter higher region. In general, the magnitude of P0 increases rapidly as the transition frequencies of the TLS ensemble turn to highly concentrate in high regime.

View Article: PubMed Central - PubMed

ABSTRACT

We demonstrate that the phonon elastic scattering leads to a dominant dissipation in crystals at low temperature. The two-level systems (TLSs) should be responsible for the elastic scattering, whereas the dissipation induced by static-point defects (SPDs) can not be neglected. One purpose of this work is to show how the energy splitting distribution of the TLS ensemble affects the dissipation. Besides, this article displays the proportion of phonon-TLS elastic scattering to total phonon dissipation. The coupling coefficient of phonon-SPD scattering and the constant P0 of the TLS distribution are important that we estimate their magnitudes in this paper. Our results is useful to understand the phonon dissipation mechanism, and give some clues to improve the performance of mechanical resonators, apply the desired defects, or reveal the atom configuration in lattice structure of disordered crystals.

No MeSH data available.