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Conductance fluctuations in high mobility monolayer graphene: Nonergodicity, lack of determinism and chaotic behavior

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ABSTRACT

We have fabricated a high mobility device, composed of a monolayer graphene flake sandwiched between two sheets of hexagonal boron nitride. Conductance fluctuations as functions of a back gate voltage and magnetic field were obtained to check for ergodicity. Non-linear dynamics concepts were used to study the nature of these fluctuations. The distribution of eigenvalues was estimated from the conductance fluctuations with Gaussian kernels and it indicates that the carrier motion is chaotic at low temperatures. We argue that a two-phase dynamical fluid model best describes the transport in this system and can be used to explain the violation of the so-called ergodic hypothesis found in graphene.

No MeSH data available.


(a) Change in resistance with respect to the resistance at zero magnetic field (R0) for different distances from the charge neutrality point (VCNP). From top the bottom: −30.00 V, −20.00 V, −5.00 V, −2.55 V, 2.12 V, 5.00 V, 8.00 V, 14.16 V, 20.00 V and 30.00 V. Offsets were added for better visualization. (b) Maximum change in resistance for the central peak of the magnetoresistance curves for the P () and N () regions as a function of the VCNP.
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f7: (a) Change in resistance with respect to the resistance at zero magnetic field (R0) for different distances from the charge neutrality point (VCNP). From top the bottom: −30.00 V, −20.00 V, −5.00 V, −2.55 V, 2.12 V, 5.00 V, 8.00 V, 14.16 V, 20.00 V and 30.00 V. Offsets were added for better visualization. (b) Maximum change in resistance for the central peak of the magnetoresistance curves for the P () and N () regions as a function of the VCNP.

Mentions: Magnetoresistance curves were taken at different back gate voltages between −1 T and 1 T as shown in Fig. 7. The peaks at zero magnetic field were analyzed and the heights of the peaks are plotted as a function of the distance from the charge neutrality point for the P and N regions. This is not a pure weak localization peak, but rather it includes a geometrical effect given by the arrangement of the contacts.


Conductance fluctuations in high mobility monolayer graphene: Nonergodicity, lack of determinism and chaotic behavior
(a) Change in resistance with respect to the resistance at zero magnetic field (R0) for different distances from the charge neutrality point (VCNP). From top the bottom: −30.00 V, −20.00 V, −5.00 V, −2.55 V, 2.12 V, 5.00 V, 8.00 V, 14.16 V, 20.00 V and 30.00 V. Offsets were added for better visualization. (b) Maximum change in resistance for the central peak of the magnetoresistance curves for the P () and N () regions as a function of the VCNP.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC5016828&req=5

f7: (a) Change in resistance with respect to the resistance at zero magnetic field (R0) for different distances from the charge neutrality point (VCNP). From top the bottom: −30.00 V, −20.00 V, −5.00 V, −2.55 V, 2.12 V, 5.00 V, 8.00 V, 14.16 V, 20.00 V and 30.00 V. Offsets were added for better visualization. (b) Maximum change in resistance for the central peak of the magnetoresistance curves for the P () and N () regions as a function of the VCNP.
Mentions: Magnetoresistance curves were taken at different back gate voltages between −1 T and 1 T as shown in Fig. 7. The peaks at zero magnetic field were analyzed and the heights of the peaks are plotted as a function of the distance from the charge neutrality point for the P and N regions. This is not a pure weak localization peak, but rather it includes a geometrical effect given by the arrangement of the contacts.

View Article: PubMed Central - PubMed

ABSTRACT

We have fabricated a high mobility device, composed of a monolayer graphene flake sandwiched between two sheets of hexagonal boron nitride. Conductance fluctuations as functions of a back gate voltage and magnetic field were obtained to check for ergodicity. Non-linear dynamics concepts were used to study the nature of these fluctuations. The distribution of eigenvalues was estimated from the conductance fluctuations with Gaussian kernels and it indicates that the carrier motion is chaotic at low temperatures. We argue that a two-phase dynamical fluid model best describes the transport in this system and can be used to explain the violation of the so-called ergodic hypothesis found in graphene.

No MeSH data available.