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Novel Self-shrinking Mask for Sub-3 nm Pattern Fabrication.

Yang PS, Cheng PH, Kao CR, Chen MJ - Sci Rep (2016)

Bottom Line: It is very difficult to realize sub-3 nm patterns using conventional lithography for next-generation high-performance nanosensing, photonic, and computing devices.Here we propose a completely original and novel concept, termed self-shrinking dielectric mask (SDM), to fabricate sub-3 nm patterns.In addition, numerous patterns with assorted shapes can be fabricated simultaneously using the SDM technique, exhibiting a much higher throughput than conventional ion beam lithography.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science and Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei, 106, ROC Taiwan.

ABSTRACT
It is very difficult to realize sub-3 nm patterns using conventional lithography for next-generation high-performance nanosensing, photonic, and computing devices. Here we propose a completely original and novel concept, termed self-shrinking dielectric mask (SDM), to fabricate sub-3 nm patterns. Instead of focusing the electron and ion beams or light to an extreme scale, the SDM method relies on a hard dielectric mask which shrinks the critical dimension of nanopatterns during the ion irradiation. Based on the SDM method, a linewidth as low as 2.1 nm was achieved along with a high aspect ratio in the sub-10 nm scale. In addition, numerous patterns with assorted shapes can be fabricated simultaneously using the SDM technique, exhibiting a much higher throughput than conventional ion beam lithography. Therefore, the SDM method can be widely applied in the fields which need extreme nanoscale fabrication.

No MeSH data available.


Related in: MedlinePlus

SEM images of a large area of uniform ~5 nm patterns fabricated by the SDM method.(a) A large exposure area of ~3570 μm2 with the ion irradiation. (b) A magnified image from (a), revealing a uniform line array over a large area. (c) A magnified image from (b), revealing a narrow gap of only 5.1 nm in width.
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f5: SEM images of a large area of uniform ~5 nm patterns fabricated by the SDM method.(a) A large exposure area of ~3570 μm2 with the ion irradiation. (b) A magnified image from (a), revealing a uniform line array over a large area. (c) A magnified image from (b), revealing a narrow gap of only 5.1 nm in width.

Mentions: Another attractive point of SDM is its capability to fabricate a myriad of nanopatterns simultaneously as long as the initial patterns are within the exposure area of the ion source. In Fig. 5, its ability to fabricate a large area of a uniform sub-10 nm line array is shown. A large exposure area of 3570 μm2 irradiated by the Ga ions is illustrated in Fig. 5a. In fact, even a larger area can be achieved by SDM as long as the initial pattern is within the exposure region of the ion source. Figure 5b depicts the uniformly fabricated sub-10 nm line array after the ion irradiation, and a small linewidth of only 5.1 nm is clearly manifested in Fig. 5c.


Novel Self-shrinking Mask for Sub-3 nm Pattern Fabrication.

Yang PS, Cheng PH, Kao CR, Chen MJ - Sci Rep (2016)

SEM images of a large area of uniform ~5 nm patterns fabricated by the SDM method.(a) A large exposure area of ~3570 μm2 with the ion irradiation. (b) A magnified image from (a), revealing a uniform line array over a large area. (c) A magnified image from (b), revealing a narrow gap of only 5.1 nm in width.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4940743&req=5

f5: SEM images of a large area of uniform ~5 nm patterns fabricated by the SDM method.(a) A large exposure area of ~3570 μm2 with the ion irradiation. (b) A magnified image from (a), revealing a uniform line array over a large area. (c) A magnified image from (b), revealing a narrow gap of only 5.1 nm in width.
Mentions: Another attractive point of SDM is its capability to fabricate a myriad of nanopatterns simultaneously as long as the initial patterns are within the exposure area of the ion source. In Fig. 5, its ability to fabricate a large area of a uniform sub-10 nm line array is shown. A large exposure area of 3570 μm2 irradiated by the Ga ions is illustrated in Fig. 5a. In fact, even a larger area can be achieved by SDM as long as the initial pattern is within the exposure region of the ion source. Figure 5b depicts the uniformly fabricated sub-10 nm line array after the ion irradiation, and a small linewidth of only 5.1 nm is clearly manifested in Fig. 5c.

Bottom Line: It is very difficult to realize sub-3 nm patterns using conventional lithography for next-generation high-performance nanosensing, photonic, and computing devices.Here we propose a completely original and novel concept, termed self-shrinking dielectric mask (SDM), to fabricate sub-3 nm patterns.In addition, numerous patterns with assorted shapes can be fabricated simultaneously using the SDM technique, exhibiting a much higher throughput than conventional ion beam lithography.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science and Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei, 106, ROC Taiwan.

ABSTRACT
It is very difficult to realize sub-3 nm patterns using conventional lithography for next-generation high-performance nanosensing, photonic, and computing devices. Here we propose a completely original and novel concept, termed self-shrinking dielectric mask (SDM), to fabricate sub-3 nm patterns. Instead of focusing the electron and ion beams or light to an extreme scale, the SDM method relies on a hard dielectric mask which shrinks the critical dimension of nanopatterns during the ion irradiation. Based on the SDM method, a linewidth as low as 2.1 nm was achieved along with a high aspect ratio in the sub-10 nm scale. In addition, numerous patterns with assorted shapes can be fabricated simultaneously using the SDM technique, exhibiting a much higher throughput than conventional ion beam lithography. Therefore, the SDM method can be widely applied in the fields which need extreme nanoscale fabrication.

No MeSH data available.


Related in: MedlinePlus