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Novel Self-shrinking Mask for Sub-3 nm Pattern Fabrication.

Yang PS, Cheng PH, Kao CR, Chen MJ - Sci Rep (2016)

Bottom Line: It is very difficult to realize sub-3 nm patterns using conventional lithography for next-generation high-performance nanosensing, photonic, and computing devices.Here we propose a completely original and novel concept, termed self-shrinking dielectric mask (SDM), to fabricate sub-3 nm patterns.In addition, numerous patterns with assorted shapes can be fabricated simultaneously using the SDM technique, exhibiting a much higher throughput than conventional ion beam lithography.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science and Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei, 106, ROC Taiwan.

ABSTRACT
It is very difficult to realize sub-3 nm patterns using conventional lithography for next-generation high-performance nanosensing, photonic, and computing devices. Here we propose a completely original and novel concept, termed self-shrinking dielectric mask (SDM), to fabricate sub-3 nm patterns. Instead of focusing the electron and ion beams or light to an extreme scale, the SDM method relies on a hard dielectric mask which shrinks the critical dimension of nanopatterns during the ion irradiation. Based on the SDM method, a linewidth as low as 2.1 nm was achieved along with a high aspect ratio in the sub-10 nm scale. In addition, numerous patterns with assorted shapes can be fabricated simultaneously using the SDM technique, exhibiting a much higher throughput than conventional ion beam lithography. Therefore, the SDM method can be widely applied in the fields which need extreme nanoscale fabrication.

No MeSH data available.


Related in: MedlinePlus

Multiple shapes fabricated by SDM.(a) A circle ring array with ~100 nm gap width as the initial pattern prepared by the focused Ga ion beam. (b) The gap width of the circle ring was reduced to 4.3 nm after the ion irradiation. The inset shows the cross section of the circle ring, revealing a bottom linewidth down to 2.7 nm. (c) A nanohole array with a diameter of ~120 nm as the initial pattern prepared by the focused Ga ion beam. (d) The diameter of the nanohole array shrunk to 7 nm after the ion irradiation. (e) A square ring array with ~100 nm gap width as the initial pattern prepared by the focused Ga ion beam. (f) The gap width of the square ring was reduced to 4.1 nm after the ion irradiation.
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f4: Multiple shapes fabricated by SDM.(a) A circle ring array with ~100 nm gap width as the initial pattern prepared by the focused Ga ion beam. (b) The gap width of the circle ring was reduced to 4.3 nm after the ion irradiation. The inset shows the cross section of the circle ring, revealing a bottom linewidth down to 2.7 nm. (c) A nanohole array with a diameter of ~120 nm as the initial pattern prepared by the focused Ga ion beam. (d) The diameter of the nanohole array shrunk to 7 nm after the ion irradiation. (e) A square ring array with ~100 nm gap width as the initial pattern prepared by the focused Ga ion beam. (f) The gap width of the square ring was reduced to 4.1 nm after the ion irradiation.

Mentions: Nanopatterns with a variety of different shapes are also feasible to be fabricated by SDM. In Fig. 4a, a circle ring array with a ~100 nm gap width as the initial pattern was fabricated by focused Ga ion beam. A gap width down to 4.3 nm was achieved by SDM as depicted in Fig. 4b. The inset in Fig. 4b is the cross section of the nanogap of the circle ring, revealing that the bottom width of the nanogap is only 2.7 nm. Apart from the circle ring array, initial patterns including a nanohole array with a diameter of ~120 nm and a square ring array with a gap width of ~100 nm were also prepared as shown in Fig. 4c,e, respectively. Figure 4d,f show the diameter of the nanoholes and the gap width of the square ring dramatically shrunk to 7 nm and 4.1 nm, respectively, after the ion irradiation. The result clearly demonstrates that the SDM method is capable of creating nanopatterns with different shapes of a critical dimension down to sub-10 nm scale. It should be noted that the surface of Al2O3 inside the square become spherical (in Fig. 4e) after the ion irradiation of the square ring patterns.


Novel Self-shrinking Mask for Sub-3 nm Pattern Fabrication.

Yang PS, Cheng PH, Kao CR, Chen MJ - Sci Rep (2016)

Multiple shapes fabricated by SDM.(a) A circle ring array with ~100 nm gap width as the initial pattern prepared by the focused Ga ion beam. (b) The gap width of the circle ring was reduced to 4.3 nm after the ion irradiation. The inset shows the cross section of the circle ring, revealing a bottom linewidth down to 2.7 nm. (c) A nanohole array with a diameter of ~120 nm as the initial pattern prepared by the focused Ga ion beam. (d) The diameter of the nanohole array shrunk to 7 nm after the ion irradiation. (e) A square ring array with ~100 nm gap width as the initial pattern prepared by the focused Ga ion beam. (f) The gap width of the square ring was reduced to 4.1 nm after the ion irradiation.
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f4: Multiple shapes fabricated by SDM.(a) A circle ring array with ~100 nm gap width as the initial pattern prepared by the focused Ga ion beam. (b) The gap width of the circle ring was reduced to 4.3 nm after the ion irradiation. The inset shows the cross section of the circle ring, revealing a bottom linewidth down to 2.7 nm. (c) A nanohole array with a diameter of ~120 nm as the initial pattern prepared by the focused Ga ion beam. (d) The diameter of the nanohole array shrunk to 7 nm after the ion irradiation. (e) A square ring array with ~100 nm gap width as the initial pattern prepared by the focused Ga ion beam. (f) The gap width of the square ring was reduced to 4.1 nm after the ion irradiation.
Mentions: Nanopatterns with a variety of different shapes are also feasible to be fabricated by SDM. In Fig. 4a, a circle ring array with a ~100 nm gap width as the initial pattern was fabricated by focused Ga ion beam. A gap width down to 4.3 nm was achieved by SDM as depicted in Fig. 4b. The inset in Fig. 4b is the cross section of the nanogap of the circle ring, revealing that the bottom width of the nanogap is only 2.7 nm. Apart from the circle ring array, initial patterns including a nanohole array with a diameter of ~120 nm and a square ring array with a gap width of ~100 nm were also prepared as shown in Fig. 4c,e, respectively. Figure 4d,f show the diameter of the nanoholes and the gap width of the square ring dramatically shrunk to 7 nm and 4.1 nm, respectively, after the ion irradiation. The result clearly demonstrates that the SDM method is capable of creating nanopatterns with different shapes of a critical dimension down to sub-10 nm scale. It should be noted that the surface of Al2O3 inside the square become spherical (in Fig. 4e) after the ion irradiation of the square ring patterns.

Bottom Line: It is very difficult to realize sub-3 nm patterns using conventional lithography for next-generation high-performance nanosensing, photonic, and computing devices.Here we propose a completely original and novel concept, termed self-shrinking dielectric mask (SDM), to fabricate sub-3 nm patterns.In addition, numerous patterns with assorted shapes can be fabricated simultaneously using the SDM technique, exhibiting a much higher throughput than conventional ion beam lithography.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science and Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei, 106, ROC Taiwan.

ABSTRACT
It is very difficult to realize sub-3 nm patterns using conventional lithography for next-generation high-performance nanosensing, photonic, and computing devices. Here we propose a completely original and novel concept, termed self-shrinking dielectric mask (SDM), to fabricate sub-3 nm patterns. Instead of focusing the electron and ion beams or light to an extreme scale, the SDM method relies on a hard dielectric mask which shrinks the critical dimension of nanopatterns during the ion irradiation. Based on the SDM method, a linewidth as low as 2.1 nm was achieved along with a high aspect ratio in the sub-10 nm scale. In addition, numerous patterns with assorted shapes can be fabricated simultaneously using the SDM technique, exhibiting a much higher throughput than conventional ion beam lithography. Therefore, the SDM method can be widely applied in the fields which need extreme nanoscale fabrication.

No MeSH data available.


Related in: MedlinePlus