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Novel Self-shrinking Mask for Sub-3 nm Pattern Fabrication.

Yang PS, Cheng PH, Kao CR, Chen MJ - Sci Rep (2016)

Bottom Line: It is very difficult to realize sub-3 nm patterns using conventional lithography for next-generation high-performance nanosensing, photonic, and computing devices.Here we propose a completely original and novel concept, termed self-shrinking dielectric mask (SDM), to fabricate sub-3 nm patterns.In addition, numerous patterns with assorted shapes can be fabricated simultaneously using the SDM technique, exhibiting a much higher throughput than conventional ion beam lithography.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science and Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei, 106, ROC Taiwan.

ABSTRACT
It is very difficult to realize sub-3 nm patterns using conventional lithography for next-generation high-performance nanosensing, photonic, and computing devices. Here we propose a completely original and novel concept, termed self-shrinking dielectric mask (SDM), to fabricate sub-3 nm patterns. Instead of focusing the electron and ion beams or light to an extreme scale, the SDM method relies on a hard dielectric mask which shrinks the critical dimension of nanopatterns during the ion irradiation. Based on the SDM method, a linewidth as low as 2.1 nm was achieved along with a high aspect ratio in the sub-10 nm scale. In addition, numerous patterns with assorted shapes can be fabricated simultaneously using the SDM technique, exhibiting a much higher throughput than conventional ion beam lithography. Therefore, the SDM method can be widely applied in the fields which need extreme nanoscale fabrication.

No MeSH data available.


Related in: MedlinePlus

The SDM method.(a) The substrate is deposited with a hard dielectric mask such as Al2O3. (b) An initial pattern (e.g. a line array) is defined by the conventional lithography such as optical, ion and electron beam lithography, etc. (c) Scheme illustrates the self-shrinking process on the dielectric mask during the ion irradiation. (d) A hard mask with the target linewidth is obtained when the ion irradiation is stopped. (e) Then the patterns are transferred to the substrate by subsequent dry etching such as reactive ion etching or further ion exposure. (f) The dielectric mask is etched away and then the nanopatterns on the substrate are obtained.
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f1: The SDM method.(a) The substrate is deposited with a hard dielectric mask such as Al2O3. (b) An initial pattern (e.g. a line array) is defined by the conventional lithography such as optical, ion and electron beam lithography, etc. (c) Scheme illustrates the self-shrinking process on the dielectric mask during the ion irradiation. (d) A hard mask with the target linewidth is obtained when the ion irradiation is stopped. (e) Then the patterns are transferred to the substrate by subsequent dry etching such as reactive ion etching or further ion exposure. (f) The dielectric mask is etched away and then the nanopatterns on the substrate are obtained.

Mentions: Figure 1 depicts the SDM method schematically. First, a hard dielectric layer such as Al2O3 is deposited on the substrate (Fig. 1a), and then an initial pattern (e.g. a line array) is defined by conventional lithography (Fig. 1b). Afterwards, the sample is exposed to the ion irradiation for a couple of minutes, and the gap will shrink during the ion irradiation (Fig. 1c). The ion irradiation will be stopped once the target linewidth of nanogap is reached, and then a hard mask with the target linewidth is obtained (Fig. 1d). With this hard dielectric mask, we can transfer the patterns to the substrate by subsequent reactive ion etching or by further ion irradiation (Fig. 1e). Finally, the hard mask is removed away by etching after the patterns are transferred to the substrate (Fig. 1f).


Novel Self-shrinking Mask for Sub-3 nm Pattern Fabrication.

Yang PS, Cheng PH, Kao CR, Chen MJ - Sci Rep (2016)

The SDM method.(a) The substrate is deposited with a hard dielectric mask such as Al2O3. (b) An initial pattern (e.g. a line array) is defined by the conventional lithography such as optical, ion and electron beam lithography, etc. (c) Scheme illustrates the self-shrinking process on the dielectric mask during the ion irradiation. (d) A hard mask with the target linewidth is obtained when the ion irradiation is stopped. (e) Then the patterns are transferred to the substrate by subsequent dry etching such as reactive ion etching or further ion exposure. (f) The dielectric mask is etched away and then the nanopatterns on the substrate are obtained.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4940743&req=5

f1: The SDM method.(a) The substrate is deposited with a hard dielectric mask such as Al2O3. (b) An initial pattern (e.g. a line array) is defined by the conventional lithography such as optical, ion and electron beam lithography, etc. (c) Scheme illustrates the self-shrinking process on the dielectric mask during the ion irradiation. (d) A hard mask with the target linewidth is obtained when the ion irradiation is stopped. (e) Then the patterns are transferred to the substrate by subsequent dry etching such as reactive ion etching or further ion exposure. (f) The dielectric mask is etched away and then the nanopatterns on the substrate are obtained.
Mentions: Figure 1 depicts the SDM method schematically. First, a hard dielectric layer such as Al2O3 is deposited on the substrate (Fig. 1a), and then an initial pattern (e.g. a line array) is defined by conventional lithography (Fig. 1b). Afterwards, the sample is exposed to the ion irradiation for a couple of minutes, and the gap will shrink during the ion irradiation (Fig. 1c). The ion irradiation will be stopped once the target linewidth of nanogap is reached, and then a hard mask with the target linewidth is obtained (Fig. 1d). With this hard dielectric mask, we can transfer the patterns to the substrate by subsequent reactive ion etching or by further ion irradiation (Fig. 1e). Finally, the hard mask is removed away by etching after the patterns are transferred to the substrate (Fig. 1f).

Bottom Line: It is very difficult to realize sub-3 nm patterns using conventional lithography for next-generation high-performance nanosensing, photonic, and computing devices.Here we propose a completely original and novel concept, termed self-shrinking dielectric mask (SDM), to fabricate sub-3 nm patterns.In addition, numerous patterns with assorted shapes can be fabricated simultaneously using the SDM technique, exhibiting a much higher throughput than conventional ion beam lithography.

View Article: PubMed Central - PubMed

Affiliation: Department of Materials Science and Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei, 106, ROC Taiwan.

ABSTRACT
It is very difficult to realize sub-3 nm patterns using conventional lithography for next-generation high-performance nanosensing, photonic, and computing devices. Here we propose a completely original and novel concept, termed self-shrinking dielectric mask (SDM), to fabricate sub-3 nm patterns. Instead of focusing the electron and ion beams or light to an extreme scale, the SDM method relies on a hard dielectric mask which shrinks the critical dimension of nanopatterns during the ion irradiation. Based on the SDM method, a linewidth as low as 2.1 nm was achieved along with a high aspect ratio in the sub-10 nm scale. In addition, numerous patterns with assorted shapes can be fabricated simultaneously using the SDM technique, exhibiting a much higher throughput than conventional ion beam lithography. Therefore, the SDM method can be widely applied in the fields which need extreme nanoscale fabrication.

No MeSH data available.


Related in: MedlinePlus