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The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching.

Zhong H, Guo A, Guo G, Li W, Jiang Y - Nanoscale Res Lett (2016)

Bottom Line: These modified surfaces show higher light absorptance in the near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the variations in the absorption spectra of the nanostructured black silicon with different etching processes are obtained.The maximum light absorptance increases significantly up to 95 % in the wavelength range of 400 to 2500 nm.Our recent novel results clearly indicate that nanostructured black silicon made by MCE has potential application in near-infrared photoelectronic detectors.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.

ABSTRACT
We use metal-assisted chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of C-Si. The Si-PIN photoelectronic detector based on this type of black silicon shows excellent device performance with a responsivity of 0.57 A/W at 1060 nm. Silicon nanocone arrays can be created using MCE treatment. These modified surfaces show higher light absorptance in the near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the variations in the absorption spectra of the nanostructured black silicon with different etching processes are obtained. The maximum light absorptance increases significantly up to 95 % in the wavelength range of 400 to 2500 nm. Our recent novel results clearly indicate that nanostructured black silicon made by MCE has potential application in near-infrared photoelectronic detectors.

No MeSH data available.


Reflectance (a) and absorptance (b) of C-Si and black silicon fabricated for different etching time
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Fig4: Reflectance (a) and absorptance (b) of C-Si and black silicon fabricated for different etching time

Mentions: As shown in Fig. 4a, the light reflectance is obviously suppressed due to the silicon nanocone arrays existing on the surface of the samples. The reflectance of ordinary C-Si is much higher than that of the specific C-Si with nanostructured surface. It can be easily understood that the longer the etching time, the higher the silicon nanocone arrays. This is the reason why the reflectance of three kinds of samples is different.Fig. 4


The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching.

Zhong H, Guo A, Guo G, Li W, Jiang Y - Nanoscale Res Lett (2016)

Reflectance (a) and absorptance (b) of C-Si and black silicon fabricated for different etching time
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4930436&req=5

Fig4: Reflectance (a) and absorptance (b) of C-Si and black silicon fabricated for different etching time
Mentions: As shown in Fig. 4a, the light reflectance is obviously suppressed due to the silicon nanocone arrays existing on the surface of the samples. The reflectance of ordinary C-Si is much higher than that of the specific C-Si with nanostructured surface. It can be easily understood that the longer the etching time, the higher the silicon nanocone arrays. This is the reason why the reflectance of three kinds of samples is different.Fig. 4

Bottom Line: These modified surfaces show higher light absorptance in the near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the variations in the absorption spectra of the nanostructured black silicon with different etching processes are obtained.The maximum light absorptance increases significantly up to 95 % in the wavelength range of 400 to 2500 nm.Our recent novel results clearly indicate that nanostructured black silicon made by MCE has potential application in near-infrared photoelectronic detectors.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.

ABSTRACT
We use metal-assisted chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of C-Si. The Si-PIN photoelectronic detector based on this type of black silicon shows excellent device performance with a responsivity of 0.57 A/W at 1060 nm. Silicon nanocone arrays can be created using MCE treatment. These modified surfaces show higher light absorptance in the near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the variations in the absorption spectra of the nanostructured black silicon with different etching processes are obtained. The maximum light absorptance increases significantly up to 95 % in the wavelength range of 400 to 2500 nm. Our recent novel results clearly indicate that nanostructured black silicon made by MCE has potential application in near-infrared photoelectronic detectors.

No MeSH data available.