Limits...
The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching.

Zhong H, Guo A, Guo G, Li W, Jiang Y - Nanoscale Res Lett (2016)

Bottom Line: These modified surfaces show higher light absorptance in the near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the variations in the absorption spectra of the nanostructured black silicon with different etching processes are obtained.The maximum light absorptance increases significantly up to 95 % in the wavelength range of 400 to 2500 nm.Our recent novel results clearly indicate that nanostructured black silicon made by MCE has potential application in near-infrared photoelectronic detectors.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.

ABSTRACT
We use metal-assisted chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of C-Si. The Si-PIN photoelectronic detector based on this type of black silicon shows excellent device performance with a responsivity of 0.57 A/W at 1060 nm. Silicon nanocone arrays can be created using MCE treatment. These modified surfaces show higher light absorptance in the near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the variations in the absorption spectra of the nanostructured black silicon with different etching processes are obtained. The maximum light absorptance increases significantly up to 95 % in the wavelength range of 400 to 2500 nm. Our recent novel results clearly indicate that nanostructured black silicon made by MCE has potential application in near-infrared photoelectronic detectors.

No MeSH data available.


Two typical SEM images of silicon nanocone arrays made by MCE for different etching time: a 15 min and b 60 min
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC4930436&req=5

Fig3: Two typical SEM images of silicon nanocone arrays made by MCE for different etching time: a 15 min and b 60 min

Mentions: As a result, the etched surface of the silicon substrate will be covered with aligned silicon nanocone arrays which are perpendicular to the surface of substrate (as in Fig. 3). It can be seen from Fig. 3b that the sample etched for 60 min shows the best aspect ratio, in which the average diameter and length of silicon nanocone arrays are about 100 nm and 2.5 μm, respectively. Obviously, the morphology of these silicon nanocone arrays can be well controlled by varying Ag deposition and etching duration.Fig. 3


The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching.

Zhong H, Guo A, Guo G, Li W, Jiang Y - Nanoscale Res Lett (2016)

Two typical SEM images of silicon nanocone arrays made by MCE for different etching time: a 15 min and b 60 min
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4930436&req=5

Fig3: Two typical SEM images of silicon nanocone arrays made by MCE for different etching time: a 15 min and b 60 min
Mentions: As a result, the etched surface of the silicon substrate will be covered with aligned silicon nanocone arrays which are perpendicular to the surface of substrate (as in Fig. 3). It can be seen from Fig. 3b that the sample etched for 60 min shows the best aspect ratio, in which the average diameter and length of silicon nanocone arrays are about 100 nm and 2.5 μm, respectively. Obviously, the morphology of these silicon nanocone arrays can be well controlled by varying Ag deposition and etching duration.Fig. 3

Bottom Line: These modified surfaces show higher light absorptance in the near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the variations in the absorption spectra of the nanostructured black silicon with different etching processes are obtained.The maximum light absorptance increases significantly up to 95 % in the wavelength range of 400 to 2500 nm.Our recent novel results clearly indicate that nanostructured black silicon made by MCE has potential application in near-infrared photoelectronic detectors.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.

ABSTRACT
We use metal-assisted chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of C-Si. The Si-PIN photoelectronic detector based on this type of black silicon shows excellent device performance with a responsivity of 0.57 A/W at 1060 nm. Silicon nanocone arrays can be created using MCE treatment. These modified surfaces show higher light absorptance in the near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the variations in the absorption spectra of the nanostructured black silicon with different etching processes are obtained. The maximum light absorptance increases significantly up to 95 % in the wavelength range of 400 to 2500 nm. Our recent novel results clearly indicate that nanostructured black silicon made by MCE has potential application in near-infrared photoelectronic detectors.

No MeSH data available.