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The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching.

Zhong H, Guo A, Guo G, Li W, Jiang Y - Nanoscale Res Lett (2016)

Bottom Line: These modified surfaces show higher light absorptance in the near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the variations in the absorption spectra of the nanostructured black silicon with different etching processes are obtained.The maximum light absorptance increases significantly up to 95 % in the wavelength range of 400 to 2500 nm.Our recent novel results clearly indicate that nanostructured black silicon made by MCE has potential application in near-infrared photoelectronic detectors.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.

ABSTRACT
We use metal-assisted chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of C-Si. The Si-PIN photoelectronic detector based on this type of black silicon shows excellent device performance with a responsivity of 0.57 A/W at 1060 nm. Silicon nanocone arrays can be created using MCE treatment. These modified surfaces show higher light absorptance in the near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the variations in the absorption spectra of the nanostructured black silicon with different etching processes are obtained. The maximum light absorptance increases significantly up to 95 % in the wavelength range of 400 to 2500 nm. Our recent novel results clearly indicate that nanostructured black silicon made by MCE has potential application in near-infrared photoelectronic detectors.

No MeSH data available.


Real image of the detector (a) and structure (b) of Si-PIN detector based on nanostructured black silicon
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Fig1: Real image of the detector (a) and structure (b) of Si-PIN detector based on nanostructured black silicon

Mentions: Figure 1 shows the real device image (a) and structure of Si-PIN photoelectronic detector with nanostructured black silicon formed on the front surface (b), respectively. First, a p-type layer was fabricated by diffusing into a lightly doped n-type wafer on polished surface. Second, the wafer was grinded to a thickness of about 300 μm on the back side of the wafer. Third, a P-doped N+ layer was made on the grinded surface of the wafer, and then the nanostructured black silicon was formed on the top of N+ layer. Finally, ohmic contact was performed by the deposition of metal electrodes on both sides of the wafer. The photosensitive surface is square in shape with a side dimension of 3.6 mm (shown as in Fig. 1a).Fig. 1


The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching.

Zhong H, Guo A, Guo G, Li W, Jiang Y - Nanoscale Res Lett (2016)

Real image of the detector (a) and structure (b) of Si-PIN detector based on nanostructured black silicon
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4930436&req=5

Fig1: Real image of the detector (a) and structure (b) of Si-PIN detector based on nanostructured black silicon
Mentions: Figure 1 shows the real device image (a) and structure of Si-PIN photoelectronic detector with nanostructured black silicon formed on the front surface (b), respectively. First, a p-type layer was fabricated by diffusing into a lightly doped n-type wafer on polished surface. Second, the wafer was grinded to a thickness of about 300 μm on the back side of the wafer. Third, a P-doped N+ layer was made on the grinded surface of the wafer, and then the nanostructured black silicon was formed on the top of N+ layer. Finally, ohmic contact was performed by the deposition of metal electrodes on both sides of the wafer. The photosensitive surface is square in shape with a side dimension of 3.6 mm (shown as in Fig. 1a).Fig. 1

Bottom Line: These modified surfaces show higher light absorptance in the near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the variations in the absorption spectra of the nanostructured black silicon with different etching processes are obtained.The maximum light absorptance increases significantly up to 95 % in the wavelength range of 400 to 2500 nm.Our recent novel results clearly indicate that nanostructured black silicon made by MCE has potential application in near-infrared photoelectronic detectors.

View Article: PubMed Central - PubMed

Affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.

ABSTRACT
We use metal-assisted chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of C-Si. The Si-PIN photoelectronic detector based on this type of black silicon shows excellent device performance with a responsivity of 0.57 A/W at 1060 nm. Silicon nanocone arrays can be created using MCE treatment. These modified surfaces show higher light absorptance in the near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the variations in the absorption spectra of the nanostructured black silicon with different etching processes are obtained. The maximum light absorptance increases significantly up to 95 % in the wavelength range of 400 to 2500 nm. Our recent novel results clearly indicate that nanostructured black silicon made by MCE has potential application in near-infrared photoelectronic detectors.

No MeSH data available.