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Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors.

Lei Y, Deng P, Li J, Lin M, Zhu F, Ng TW, Lee CS, Ong BS - Sci Rep (2016)

Bottom Line: Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics.Conversely, the readily soluble, low-MW D-A polymers give low mobility.With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm(2)V(-1)s(-1)), on/off ratio (10(7)), and other desirable field-effect properties that meet impactful OFET application requirements.

View Article: PubMed Central - PubMed

Affiliation: Department of Physics and Institute of Advanced Materials, Hong Kong Baptist University, Hong Kong SAR, P. R. China.

ABSTRACT
Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics. Conjugated electron donor-acceptor (D-A) polymers have surfaced as ideal channel semiconductor candidates for OFETs. However, high-molecular weight (MW) D-A polymer semiconductors, which offer high field-effect mobility, generally suffer from processing complications due to limited solubility. Conversely, the readily soluble, low-MW D-A polymers give low mobility. We report herein a facile solution process which transformed a lower-MW, low-mobility diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (I) into a high crystalline order and high-mobility semiconductor for OFETs applications. The process involved solution fabrication of a channel semiconductor film from a lower-MW (I) and polystyrene blends. With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm(2)V(-1)s(-1)), on/off ratio (10(7)), and other desirable field-effect properties that meet impactful OFET application requirements.

No MeSH data available.


Related in: MedlinePlus

AFM topographic images of thermally annealed films of (I) with and without polystyrene.(a) Film of neat (I) displaying grainy nanodomain features; (b) (I)/polystyrene (80/20 wt%) film showing signs of aggregation of nanograins into nanowire-like structures; (c) formation of nanowire network in (I)/polystyrene (60/40 wt%) film; (d) optimal nanowire network formation in (I)/polystyrene (40/60 wt%) film; (e) degradation of nanowire domains in (I)/polystyrene (20/80 wt%) film; (f) well-defined nanowire network of thermally annealed (I)/polystyrene (40/60 wt%) film with the polystyrene removed.
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f2: AFM topographic images of thermally annealed films of (I) with and without polystyrene.(a) Film of neat (I) displaying grainy nanodomain features; (b) (I)/polystyrene (80/20 wt%) film showing signs of aggregation of nanograins into nanowire-like structures; (c) formation of nanowire network in (I)/polystyrene (60/40 wt%) film; (d) optimal nanowire network formation in (I)/polystyrene (40/60 wt%) film; (e) degradation of nanowire domains in (I)/polystyrene (20/80 wt%) film; (f) well-defined nanowire network of thermally annealed (I)/polystyrene (40/60 wt%) film with the polystyrene removed.

Mentions: To understand in greater detail the medium-assisted structural ordering and crystallization of (I), atomic force microscopic (AFM) studies of the semiconductor films were conducted. In AFM topographic images, the neat (I) film displayed mostly grainy, defused nanodomain features without any long-range orders (Fig. 2a). On the other hand, the polystyrene blended films showed progressive formation of larger, more defined, nanowire-like structures composed of aggregates of nanodomain features with diameter of 50–60 nm (Fig. 2b,c). Distinctive intertwined, long-ranged nanowire network structure with nanowire lengths of over 500 nm was observed at around 60 wt% polystyrene loading (Fig. 2d). Beyond 60 wt% polystyrene loading, degradation in crystalline domain structures occurred leading to decreased nanowire density (Fig. 2e).


Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors.

Lei Y, Deng P, Li J, Lin M, Zhu F, Ng TW, Lee CS, Ong BS - Sci Rep (2016)

AFM topographic images of thermally annealed films of (I) with and without polystyrene.(a) Film of neat (I) displaying grainy nanodomain features; (b) (I)/polystyrene (80/20 wt%) film showing signs of aggregation of nanograins into nanowire-like structures; (c) formation of nanowire network in (I)/polystyrene (60/40 wt%) film; (d) optimal nanowire network formation in (I)/polystyrene (40/60 wt%) film; (e) degradation of nanowire domains in (I)/polystyrene (20/80 wt%) film; (f) well-defined nanowire network of thermally annealed (I)/polystyrene (40/60 wt%) film with the polystyrene removed.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4835732&req=5

f2: AFM topographic images of thermally annealed films of (I) with and without polystyrene.(a) Film of neat (I) displaying grainy nanodomain features; (b) (I)/polystyrene (80/20 wt%) film showing signs of aggregation of nanograins into nanowire-like structures; (c) formation of nanowire network in (I)/polystyrene (60/40 wt%) film; (d) optimal nanowire network formation in (I)/polystyrene (40/60 wt%) film; (e) degradation of nanowire domains in (I)/polystyrene (20/80 wt%) film; (f) well-defined nanowire network of thermally annealed (I)/polystyrene (40/60 wt%) film with the polystyrene removed.
Mentions: To understand in greater detail the medium-assisted structural ordering and crystallization of (I), atomic force microscopic (AFM) studies of the semiconductor films were conducted. In AFM topographic images, the neat (I) film displayed mostly grainy, defused nanodomain features without any long-range orders (Fig. 2a). On the other hand, the polystyrene blended films showed progressive formation of larger, more defined, nanowire-like structures composed of aggregates of nanodomain features with diameter of 50–60 nm (Fig. 2b,c). Distinctive intertwined, long-ranged nanowire network structure with nanowire lengths of over 500 nm was observed at around 60 wt% polystyrene loading (Fig. 2d). Beyond 60 wt% polystyrene loading, degradation in crystalline domain structures occurred leading to decreased nanowire density (Fig. 2e).

Bottom Line: Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics.Conversely, the readily soluble, low-MW D-A polymers give low mobility.With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm(2)V(-1)s(-1)), on/off ratio (10(7)), and other desirable field-effect properties that meet impactful OFET application requirements.

View Article: PubMed Central - PubMed

Affiliation: Department of Physics and Institute of Advanced Materials, Hong Kong Baptist University, Hong Kong SAR, P. R. China.

ABSTRACT
Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics. Conjugated electron donor-acceptor (D-A) polymers have surfaced as ideal channel semiconductor candidates for OFETs. However, high-molecular weight (MW) D-A polymer semiconductors, which offer high field-effect mobility, generally suffer from processing complications due to limited solubility. Conversely, the readily soluble, low-MW D-A polymers give low mobility. We report herein a facile solution process which transformed a lower-MW, low-mobility diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (I) into a high crystalline order and high-mobility semiconductor for OFETs applications. The process involved solution fabrication of a channel semiconductor film from a lower-MW (I) and polystyrene blends. With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm(2)V(-1)s(-1)), on/off ratio (10(7)), and other desirable field-effect properties that meet impactful OFET application requirements.

No MeSH data available.


Related in: MedlinePlus