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Ternary SnS(2-x)Se(x) Alloys Nanosheets and Nanosheet Assemblies with Tunable Chemical Compositions and Band Gaps for Photodetector Applications.

Yu J, Xu CY, Li Y, Zhou F, Chen XS, Hu PA, Zhen L - Sci Rep (2015)

Bottom Line: The variation tendency of band gap was also confirmed by first-principles calculations.The photoelectrochemical measurements indicate that the performance of ternary SnS(2-x)Se(x) alloys depends on their band structures and morphology characteristics.Furthermore, SnS(2-x)Se(x) photodetectors present high photoresponsivity with a maximum of 35 mA W(-1) and good light stability in a wide range of spectral response from ultraviolet to visible light, which renders them promising candidates for a variety of optoelectronic applications.

View Article: PubMed Central - PubMed

Affiliation: School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.

ABSTRACT
Ternary metal dichalcogenides alloys exhibit compositionally tunable optical properties and electronic structure, and therefore, band gap engineering by controllable doping would provide a powerful approach to promote their physical and chemical properties. Herein we obtained ternary SnS(2-x)Se(x) alloys with tunable chemical compositions and optical properties via a simple one-step solvothermal process. Raman scattering and UV-vis-NIR absorption spectra reveal the composition-related optical features, and the band gaps can be discretely modulated from 2.23 to 1.29 eV with the increase of Se content. The variation tendency of band gap was also confirmed by first-principles calculations. The change of composition results in the difference of crystal structure as well as morphology for SnS(2-x)Se(x) solid solution, namely, nanosheets assemblies or nanosheet. The photoelectrochemical measurements indicate that the performance of ternary SnS(2-x)Se(x) alloys depends on their band structures and morphology characteristics. Furthermore, SnS(2-x)Se(x) photodetectors present high photoresponsivity with a maximum of 35 mA W(-1) and good light stability in a wide range of spectral response from ultraviolet to visible light, which renders them promising candidates for a variety of optoelectronic applications.

No MeSH data available.


(a) UV-vis-NIR absorption spectra and (b) composition-dependent band gaps and the corresponding fitting curve of SnS2−xSex alloys.
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f4: (a) UV-vis-NIR absorption spectra and (b) composition-dependent band gaps and the corresponding fitting curve of SnS2−xSex alloys.

Mentions: The band gaps could be tuned by controlling the chemical compositions of SnS2−xSex alloys. Figure 4a shows the UV-vis-NIR absorption spectra of SnS2−xSex with different Se contents. The absorption edge exhibits a red-shift with the increase of Se content, indicating enhanced optical absorption property. The band gap of semiconductor could be calculated by extrapolating straight line of the plot (αhν)1/2 vs. hν based on the equation: αhν = A(hν–Eg)n/2, and the estimated data were shown in Table 1. SnS2−xSex alloys own the band gap ranging from 2.23 eV for SnS2 to 1.92, 1.81, 1.74, 1.39 and 1.29 eV with increasing Se content. The empirical relation between band gap and composition ratio has been predicted according to the extended Vegard’s Law. Figure 4b presents the composition-dependent band gaps of SnS2−xSex alloys. The solid line represents the fitted values for the band gap relation of ternary semiconductor alloys according to the generalized equation93637:


Ternary SnS(2-x)Se(x) Alloys Nanosheets and Nanosheet Assemblies with Tunable Chemical Compositions and Band Gaps for Photodetector Applications.

Yu J, Xu CY, Li Y, Zhou F, Chen XS, Hu PA, Zhen L - Sci Rep (2015)

(a) UV-vis-NIR absorption spectra and (b) composition-dependent band gaps and the corresponding fitting curve of SnS2−xSex alloys.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4663750&req=5

f4: (a) UV-vis-NIR absorption spectra and (b) composition-dependent band gaps and the corresponding fitting curve of SnS2−xSex alloys.
Mentions: The band gaps could be tuned by controlling the chemical compositions of SnS2−xSex alloys. Figure 4a shows the UV-vis-NIR absorption spectra of SnS2−xSex with different Se contents. The absorption edge exhibits a red-shift with the increase of Se content, indicating enhanced optical absorption property. The band gap of semiconductor could be calculated by extrapolating straight line of the plot (αhν)1/2 vs. hν based on the equation: αhν = A(hν–Eg)n/2, and the estimated data were shown in Table 1. SnS2−xSex alloys own the band gap ranging from 2.23 eV for SnS2 to 1.92, 1.81, 1.74, 1.39 and 1.29 eV with increasing Se content. The empirical relation between band gap and composition ratio has been predicted according to the extended Vegard’s Law. Figure 4b presents the composition-dependent band gaps of SnS2−xSex alloys. The solid line represents the fitted values for the band gap relation of ternary semiconductor alloys according to the generalized equation93637:

Bottom Line: The variation tendency of band gap was also confirmed by first-principles calculations.The photoelectrochemical measurements indicate that the performance of ternary SnS(2-x)Se(x) alloys depends on their band structures and morphology characteristics.Furthermore, SnS(2-x)Se(x) photodetectors present high photoresponsivity with a maximum of 35 mA W(-1) and good light stability in a wide range of spectral response from ultraviolet to visible light, which renders them promising candidates for a variety of optoelectronic applications.

View Article: PubMed Central - PubMed

Affiliation: School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China.

ABSTRACT
Ternary metal dichalcogenides alloys exhibit compositionally tunable optical properties and electronic structure, and therefore, band gap engineering by controllable doping would provide a powerful approach to promote their physical and chemical properties. Herein we obtained ternary SnS(2-x)Se(x) alloys with tunable chemical compositions and optical properties via a simple one-step solvothermal process. Raman scattering and UV-vis-NIR absorption spectra reveal the composition-related optical features, and the band gaps can be discretely modulated from 2.23 to 1.29 eV with the increase of Se content. The variation tendency of band gap was also confirmed by first-principles calculations. The change of composition results in the difference of crystal structure as well as morphology for SnS(2-x)Se(x) solid solution, namely, nanosheets assemblies or nanosheet. The photoelectrochemical measurements indicate that the performance of ternary SnS(2-x)Se(x) alloys depends on their band structures and morphology characteristics. Furthermore, SnS(2-x)Se(x) photodetectors present high photoresponsivity with a maximum of 35 mA W(-1) and good light stability in a wide range of spectral response from ultraviolet to visible light, which renders them promising candidates for a variety of optoelectronic applications.

No MeSH data available.