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Novel, low-cost solid-liquid-solid process for the synthesis of α-Si3N4 nanowires at lower temperatures and their luminescence properties.

Liu H, Huang Z, Huang J, Fang M, Liu YG, Wu X, Hu X, Zhang S - Sci Rep (2015)

Bottom Line: The growth of the nanowires was governed by the solid-liquid-solid (SLS) mechanism.The room temperature photoluminescence (PL) and cathodoluminescence (CL) spectra showed that the optical properties of the α-Si3N4 nanowires can be changed along with the excitation wavelength or the excitation light source.This work can be useful, not only for simplifying the design and synthesis of Si-related nanostructures, but also for developing new generation nanodevices with changeable photoelectronic properties.

View Article: PubMed Central - PubMed

Affiliation: School of Materials Science and Technology, Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, China University of Geosciences (Beijing), 100083, P. R. China.

ABSTRACT
Ultra-long, single crystal, α-Si3N4 nanowires sheathed with amorphous silicon oxide were synthesised by an improved, simplified solid-liquid-solid (SLS) method at 1150 °C without using flowing gases (N2, CH4, Ar, NH3, etc.). Phases, chemical composition, and structural characterisation using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM/HRTEM), Fourier-transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS) showed that the nanowires had Si3N4@SiOx core-shell structures. The growth of the nanowires was governed by the solid-liquid-solid (SLS) mechanism. The room temperature photoluminescence (PL) and cathodoluminescence (CL) spectra showed that the optical properties of the α-Si3N4 nanowires can be changed along with the excitation wavelength or the excitation light source. This work can be useful, not only for simplifying the design and synthesis of Si-related nanostructures, but also for developing new generation nanodevices with changeable photoelectronic properties.

No MeSH data available.


Related in: MedlinePlus

(a,b) Representative lower magnification FESEM images of as-grown nanowires found on the substrate. The inset pattern in (a) is the EDS spectrum recorded from the marked area in (a). The inset image in (b) is a higher magnification FESEM image of the products. (c,d) X-ray diffraction pattern of the nanowire products covering the substrate.
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f1: (a,b) Representative lower magnification FESEM images of as-grown nanowires found on the substrate. The inset pattern in (a) is the EDS spectrum recorded from the marked area in (a). The inset image in (b) is a higher magnification FESEM image of the products. (c,d) X-ray diffraction pattern of the nanowire products covering the substrate.

Mentions: In this research, an improved, simplified SLS method, without using flowing gases (N2, CH4, Ar, NH3, etc.) was used to synthesise Si3N4 nanowires at a lower temperature. White coloured layers of fluffy materials, extending from the substrate surfaces up to a few microns in height (as shown in Fig. 1a), were visible to the naked eye on the substrates. Low resolution FESEM images showed the high degree of uniformity of the nanowires, which can be as long as several hundred microns. The best nanowire growth in terms of morphology and yield was observed for a substrate heated to 1150 °C. EDS spectroscopy analysis (see inset, Fig. 1a) indicated that the substrate was Si without detectable impurities therein. The inset to Fig. 1b shows a higher magnification FESEM image, revealing that the products were actually nanowires with diameters ranging from 80 to 150 nm. Figure 1c shows the X-ray diffraction (XRD) pattern of the nanowire products covering the substrate. The strong intensities and narrow widths of the peaks indicated that the substrate was well crystallised. The partial, enlarged, view (Fig. 1d) shows that the relatively weak peaks can be matched to those of the α-Si3N4. Together with the EDS results, and considering the crystallinity of the substrate and nanowires, it was expected that the as-formed nanowires were α-Si3N4.


Novel, low-cost solid-liquid-solid process for the synthesis of α-Si3N4 nanowires at lower temperatures and their luminescence properties.

Liu H, Huang Z, Huang J, Fang M, Liu YG, Wu X, Hu X, Zhang S - Sci Rep (2015)

(a,b) Representative lower magnification FESEM images of as-grown nanowires found on the substrate. The inset pattern in (a) is the EDS spectrum recorded from the marked area in (a). The inset image in (b) is a higher magnification FESEM image of the products. (c,d) X-ray diffraction pattern of the nanowire products covering the substrate.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4660443&req=5

f1: (a,b) Representative lower magnification FESEM images of as-grown nanowires found on the substrate. The inset pattern in (a) is the EDS spectrum recorded from the marked area in (a). The inset image in (b) is a higher magnification FESEM image of the products. (c,d) X-ray diffraction pattern of the nanowire products covering the substrate.
Mentions: In this research, an improved, simplified SLS method, without using flowing gases (N2, CH4, Ar, NH3, etc.) was used to synthesise Si3N4 nanowires at a lower temperature. White coloured layers of fluffy materials, extending from the substrate surfaces up to a few microns in height (as shown in Fig. 1a), were visible to the naked eye on the substrates. Low resolution FESEM images showed the high degree of uniformity of the nanowires, which can be as long as several hundred microns. The best nanowire growth in terms of morphology and yield was observed for a substrate heated to 1150 °C. EDS spectroscopy analysis (see inset, Fig. 1a) indicated that the substrate was Si without detectable impurities therein. The inset to Fig. 1b shows a higher magnification FESEM image, revealing that the products were actually nanowires with diameters ranging from 80 to 150 nm. Figure 1c shows the X-ray diffraction (XRD) pattern of the nanowire products covering the substrate. The strong intensities and narrow widths of the peaks indicated that the substrate was well crystallised. The partial, enlarged, view (Fig. 1d) shows that the relatively weak peaks can be matched to those of the α-Si3N4. Together with the EDS results, and considering the crystallinity of the substrate and nanowires, it was expected that the as-formed nanowires were α-Si3N4.

Bottom Line: The growth of the nanowires was governed by the solid-liquid-solid (SLS) mechanism.The room temperature photoluminescence (PL) and cathodoluminescence (CL) spectra showed that the optical properties of the α-Si3N4 nanowires can be changed along with the excitation wavelength or the excitation light source.This work can be useful, not only for simplifying the design and synthesis of Si-related nanostructures, but also for developing new generation nanodevices with changeable photoelectronic properties.

View Article: PubMed Central - PubMed

Affiliation: School of Materials Science and Technology, Beijing Key Laboratory of Materials Utilization of Nonmetallic Minerals and Solid Wastes, National Laboratory of Mineral Materials, China University of Geosciences (Beijing), 100083, P. R. China.

ABSTRACT
Ultra-long, single crystal, α-Si3N4 nanowires sheathed with amorphous silicon oxide were synthesised by an improved, simplified solid-liquid-solid (SLS) method at 1150 °C without using flowing gases (N2, CH4, Ar, NH3, etc.). Phases, chemical composition, and structural characterisation using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM/HRTEM), Fourier-transform infrared spectroscopy (FT-IR), and X-ray photoelectron spectroscopy (XPS) showed that the nanowires had Si3N4@SiOx core-shell structures. The growth of the nanowires was governed by the solid-liquid-solid (SLS) mechanism. The room temperature photoluminescence (PL) and cathodoluminescence (CL) spectra showed that the optical properties of the α-Si3N4 nanowires can be changed along with the excitation wavelength or the excitation light source. This work can be useful, not only for simplifying the design and synthesis of Si-related nanostructures, but also for developing new generation nanodevices with changeable photoelectronic properties.

No MeSH data available.


Related in: MedlinePlus