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Role of different scattering mechanisms on the temperature dependence of transport in graphene.

Sarkar S, Amin KR, Modak R, Singh A, Mukerjee S, Bid A - Sci Rep (2015)

Bottom Line: We find that for high mobility devices the transport properties are mainly governed by completely screened short range impurity scattering.On the other hand, for the low mobility devices transport properties are determined by both types of scattering potentials - long range due to ionized impurities and short range due to completely screened charged impurities.The results could be explained in the framework of Boltzmann transport equations involving the two independent scattering mechanisms.

View Article: PubMed Central - PubMed

Affiliation: Department of Physics, Indian Institute of Science, Bangalore 560012, India.

ABSTRACT
Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the transport properties are mainly governed by completely screened short range impurity scattering. On the other hand, for the low mobility devices transport properties are determined by both types of scattering potentials - long range due to ionized impurities and short range due to completely screened charged impurities. The results could be explained in the framework of Boltzmann transport equations involving the two independent scattering mechanisms.

No MeSH data available.


Related in: MedlinePlus

Raman spectrum of the SLG devices after the lithography processes.From the ratio of the intensities of the 2D-peak and the G-peak we can conclude that the device g28m6 is the cleanest while c2s2 is the most disordered.
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f2: Raman spectrum of the SLG devices after the lithography processes.From the ratio of the intensities of the 2D-peak and the G-peak we can conclude that the device g28m6 is the cleanest while c2s2 is the most disordered.

Mentions: Figure 2 shows the Raman spectrum for a few of the devices. From the ratio of the intensities of the 2D-peak and the G-peak we can conclude that the device g28m6 is the cleanest while c2s2 is the most disordered. The mobility μ and number density of charge impurities n0 in these devices were estimated by fitting the R-Vg curves measured at each temperature with the relation?16171819


Role of different scattering mechanisms on the temperature dependence of transport in graphene.

Sarkar S, Amin KR, Modak R, Singh A, Mukerjee S, Bid A - Sci Rep (2015)

Raman spectrum of the SLG devices after the lithography processes.From the ratio of the intensities of the 2D-peak and the G-peak we can conclude that the device g28m6 is the cleanest while c2s2 is the most disordered.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4660441&req=5

f2: Raman spectrum of the SLG devices after the lithography processes.From the ratio of the intensities of the 2D-peak and the G-peak we can conclude that the device g28m6 is the cleanest while c2s2 is the most disordered.
Mentions: Figure 2 shows the Raman spectrum for a few of the devices. From the ratio of the intensities of the 2D-peak and the G-peak we can conclude that the device g28m6 is the cleanest while c2s2 is the most disordered. The mobility μ and number density of charge impurities n0 in these devices were estimated by fitting the R-Vg curves measured at each temperature with the relation?16171819

Bottom Line: We find that for high mobility devices the transport properties are mainly governed by completely screened short range impurity scattering.On the other hand, for the low mobility devices transport properties are determined by both types of scattering potentials - long range due to ionized impurities and short range due to completely screened charged impurities.The results could be explained in the framework of Boltzmann transport equations involving the two independent scattering mechanisms.

View Article: PubMed Central - PubMed

Affiliation: Department of Physics, Indian Institute of Science, Bangalore 560012, India.

ABSTRACT
Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the transport properties are mainly governed by completely screened short range impurity scattering. On the other hand, for the low mobility devices transport properties are determined by both types of scattering potentials - long range due to ionized impurities and short range due to completely screened charged impurities. The results could be explained in the framework of Boltzmann transport equations involving the two independent scattering mechanisms.

No MeSH data available.


Related in: MedlinePlus