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Silicon nanocrystal growth under irradiation of electron beam.

Huang WQ, Liu SR, Huang ZM, Dong TG, Wang G, Qin CJ - Sci Rep (2015)

Bottom Line: In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm.In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.

View Article: PubMed Central - PubMed

Affiliation: Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025 (China).

ABSTRACT
In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm. In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.

No MeSH data available.


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TEM image of Si QDs embedded in SiOx and their PL spectra(a) TEM image of silicon QDs embedded in SiOx prepared by using irradiation of electron beam for 15 min (b) PL peaks on the Si QDs oxidized sample prepared with irradiation of electron beam for 15 min.
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f7: TEM image of Si QDs embedded in SiOx and their PL spectra(a) TEM image of silicon QDs embedded in SiOx prepared by using irradiation of electron beam for 15 min (b) PL peaks on the Si QDs oxidized sample prepared with irradiation of electron beam for 15 min.

Mentions: On the silicon nanocrystal sample prepared by using irradiation of electron beam, photoluminescence (PL) spectra were investigated in oxygen impurity atoms. Figure 7(a) shows TEM image of silicon QDs embedded in SiOx prepared by using irradiation of electron beam for 15 min, whose sharper PL peak at 604 nm is observed as shown in Fig. 7(b). Here, the PL peak at 604 nm with a very narrow linewidth belongs to a kind of localized states emission originating from Si – O bonds on silicon QDs.


Silicon nanocrystal growth under irradiation of electron beam.

Huang WQ, Liu SR, Huang ZM, Dong TG, Wang G, Qin CJ - Sci Rep (2015)

TEM image of Si QDs embedded in SiOx and their PL spectra(a) TEM image of silicon QDs embedded in SiOx prepared by using irradiation of electron beam for 15 min (b) PL peaks on the Si QDs oxidized sample prepared with irradiation of electron beam for 15 min.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4660392&req=5

f7: TEM image of Si QDs embedded in SiOx and their PL spectra(a) TEM image of silicon QDs embedded in SiOx prepared by using irradiation of electron beam for 15 min (b) PL peaks on the Si QDs oxidized sample prepared with irradiation of electron beam for 15 min.
Mentions: On the silicon nanocrystal sample prepared by using irradiation of electron beam, photoluminescence (PL) spectra were investigated in oxygen impurity atoms. Figure 7(a) shows TEM image of silicon QDs embedded in SiOx prepared by using irradiation of electron beam for 15 min, whose sharper PL peak at 604 nm is observed as shown in Fig. 7(b). Here, the PL peak at 604 nm with a very narrow linewidth belongs to a kind of localized states emission originating from Si – O bonds on silicon QDs.

Bottom Line: In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm.In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.

View Article: PubMed Central - PubMed

Affiliation: Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025 (China).

ABSTRACT
In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm. In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.

No MeSH data available.


Related in: MedlinePlus