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Silicon nanocrystal growth under irradiation of electron beam.

Huang WQ, Liu SR, Huang ZM, Dong TG, Wang G, Qin CJ - Sci Rep (2015)

Bottom Line: In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm.In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.

View Article: PubMed Central - PubMed

Affiliation: Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025 (China).

ABSTRACT
In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm. In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.

No MeSH data available.


Related in: MedlinePlus

TEM images of different silicon nanocrystals prepared in different impurity solid atoms after irradiation of electron beam for 30 min(a) TEM image of Si–Yb nanocrystals with various shapes in amorphous film after irradiation of electron beam for 30 min, in which the film structure is still kept (b) TEM image of Si–Ge nanocrystals with various shapes in amorphous film after irradiation of electron beam for 30 min, in which the film structure has been broken due to stronger condensed ability of Ge atoms (c) TEM image of Si–Er nanocrystals with various shapes in amorphous film after irradiation of electron beam for 30 min, in which the film structure has been broken because of stronger condensed ability of Er atoms.
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f6: TEM images of different silicon nanocrystals prepared in different impurity solid atoms after irradiation of electron beam for 30 min(a) TEM image of Si–Yb nanocrystals with various shapes in amorphous film after irradiation of electron beam for 30 min, in which the film structure is still kept (b) TEM image of Si–Ge nanocrystals with various shapes in amorphous film after irradiation of electron beam for 30 min, in which the film structure has been broken due to stronger condensed ability of Ge atoms (c) TEM image of Si–Er nanocrystals with various shapes in amorphous film after irradiation of electron beam for 30 min, in which the film structure has been broken because of stronger condensed ability of Er atoms.

Mentions: As shown in Fig. 6, TEM images show different structures of silicon nanocrystal with different impurity solid atoms, such as Yb atoms (a), Ge atoms (b) and Er atoms (c), in which the film structure of Si–Yb nanocrystals is still kept, but the film structures of Si–Ge and Si–Er nanocrystals have been broken. Here, it is obvious that some atoms have a stronger condensed ability, such as Er atoms.


Silicon nanocrystal growth under irradiation of electron beam.

Huang WQ, Liu SR, Huang ZM, Dong TG, Wang G, Qin CJ - Sci Rep (2015)

TEM images of different silicon nanocrystals prepared in different impurity solid atoms after irradiation of electron beam for 30 min(a) TEM image of Si–Yb nanocrystals with various shapes in amorphous film after irradiation of electron beam for 30 min, in which the film structure is still kept (b) TEM image of Si–Ge nanocrystals with various shapes in amorphous film after irradiation of electron beam for 30 min, in which the film structure has been broken due to stronger condensed ability of Ge atoms (c) TEM image of Si–Er nanocrystals with various shapes in amorphous film after irradiation of electron beam for 30 min, in which the film structure has been broken because of stronger condensed ability of Er atoms.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4660392&req=5

f6: TEM images of different silicon nanocrystals prepared in different impurity solid atoms after irradiation of electron beam for 30 min(a) TEM image of Si–Yb nanocrystals with various shapes in amorphous film after irradiation of electron beam for 30 min, in which the film structure is still kept (b) TEM image of Si–Ge nanocrystals with various shapes in amorphous film after irradiation of electron beam for 30 min, in which the film structure has been broken due to stronger condensed ability of Ge atoms (c) TEM image of Si–Er nanocrystals with various shapes in amorphous film after irradiation of electron beam for 30 min, in which the film structure has been broken because of stronger condensed ability of Er atoms.
Mentions: As shown in Fig. 6, TEM images show different structures of silicon nanocrystal with different impurity solid atoms, such as Yb atoms (a), Ge atoms (b) and Er atoms (c), in which the film structure of Si–Yb nanocrystals is still kept, but the film structures of Si–Ge and Si–Er nanocrystals have been broken. Here, it is obvious that some atoms have a stronger condensed ability, such as Er atoms.

Bottom Line: In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm.In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.

View Article: PubMed Central - PubMed

Affiliation: Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025 (China).

ABSTRACT
In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm. In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.

No MeSH data available.


Related in: MedlinePlus