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Silicon nanocrystal growth under irradiation of electron beam.

Huang WQ, Liu SR, Huang ZM, Dong TG, Wang G, Qin CJ - Sci Rep (2015)

Bottom Line: In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm.In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.

View Article: PubMed Central - PubMed

Affiliation: Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025 (China).

ABSTRACT
In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm. In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.

No MeSH data available.


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(a) TEM images of Si QDs prepared by irradiation of electron beam for 10 min on amorphous Si film prepared in nitrogen gas (b) TEM image of larger bulks Si crystals, which gradually grow in various orientations with increasing the exposure time under electron beam.
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f3: (a) TEM images of Si QDs prepared by irradiation of electron beam for 10 min on amorphous Si film prepared in nitrogen gas (b) TEM image of larger bulks Si crystals, which gradually grow in various orientations with increasing the exposure time under electron beam.

Mentions: It is very interesting that gradually growing process of QDs structure was observed under electron beam with increase of exposure time. For example, the QDs structure has been observed after irradiation for 10 min (TEM image in Fig. 3(a)) on amorphous Si film prepared in nitrogen gas, and the larger bulks crystals gradually grow in various orientations with increasing the exposure time under electron beam as shown in Fig. 3(b). It is discovered that the QDs size distribution is narrower (diameter is about 3–4 nm) for electronic irradiation time of 10–15 min.


Silicon nanocrystal growth under irradiation of electron beam.

Huang WQ, Liu SR, Huang ZM, Dong TG, Wang G, Qin CJ - Sci Rep (2015)

(a) TEM images of Si QDs prepared by irradiation of electron beam for 10 min on amorphous Si film prepared in nitrogen gas (b) TEM image of larger bulks Si crystals, which gradually grow in various orientations with increasing the exposure time under electron beam.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4660392&req=5

f3: (a) TEM images of Si QDs prepared by irradiation of electron beam for 10 min on amorphous Si film prepared in nitrogen gas (b) TEM image of larger bulks Si crystals, which gradually grow in various orientations with increasing the exposure time under electron beam.
Mentions: It is very interesting that gradually growing process of QDs structure was observed under electron beam with increase of exposure time. For example, the QDs structure has been observed after irradiation for 10 min (TEM image in Fig. 3(a)) on amorphous Si film prepared in nitrogen gas, and the larger bulks crystals gradually grow in various orientations with increasing the exposure time under electron beam as shown in Fig. 3(b). It is discovered that the QDs size distribution is narrower (diameter is about 3–4 nm) for electronic irradiation time of 10–15 min.

Bottom Line: In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm.In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.

View Article: PubMed Central - PubMed

Affiliation: Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025 (China).

ABSTRACT
In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm. In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.

No MeSH data available.


Related in: MedlinePlus