Limits...
Silicon nanocrystal growth under irradiation of electron beam.

Huang WQ, Liu SR, Huang ZM, Dong TG, Wang G, Qin CJ - Sci Rep (2015)

Bottom Line: In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm.In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.

View Article: PubMed Central - PubMed

Affiliation: Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025 (China).

ABSTRACT
In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm. In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.

No MeSH data available.


Related in: MedlinePlus

TEM images of Si QDs, in which the top insets show nanocrystal structures of QDs in various orientations, their simulation structures and their diffraction patterns (FFT images).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC4660392&req=5

f2: TEM images of Si QDs, in which the top insets show nanocrystal structures of QDs in various orientations, their simulation structures and their diffraction patterns (FFT images).

Mentions: In Fig. 2, it was observed that the nanocrystal structures of quantum dots form in the orientation of (100), (110) or (111) with the electron irradiation for 10 ~ 20 min, in which the insets show the electronic diffraction image in selection region and the fast Fourier transform (FFT) image on the polycrystalline.


Silicon nanocrystal growth under irradiation of electron beam.

Huang WQ, Liu SR, Huang ZM, Dong TG, Wang G, Qin CJ - Sci Rep (2015)

TEM images of Si QDs, in which the top insets show nanocrystal structures of QDs in various orientations, their simulation structures and their diffraction patterns (FFT images).
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4660392&req=5

f2: TEM images of Si QDs, in which the top insets show nanocrystal structures of QDs in various orientations, their simulation structures and their diffraction patterns (FFT images).
Mentions: In Fig. 2, it was observed that the nanocrystal structures of quantum dots form in the orientation of (100), (110) or (111) with the electron irradiation for 10 ~ 20 min, in which the insets show the electronic diffraction image in selection region and the fast Fourier transform (FFT) image on the polycrystalline.

Bottom Line: In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm.In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.

View Article: PubMed Central - PubMed

Affiliation: Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025 (China).

ABSTRACT
In our experiment, it was observed that silicon nanocrystal rapidly grows with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition, and shape of silicon nanocrystal is usually sphere in smaller nanoscale with less exposure time under electron beam, in which the quantum dots are prepared in nanoscale near 3 nm. In the electron interaction process, it was investigated that the various crystals structures in different orientations occur in the same time and the condensed structures of silicon nanocrystal are changed with different impurity atoms in silicon film.

No MeSH data available.


Related in: MedlinePlus