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Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.

Park JY, Man Song K, Min YS, Choi CJ, Seok Kim Y, Lee SN - Sci Rep (2015)

Bottom Line: The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs.Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm.Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

View Article: PubMed Central - PubMed

Affiliation: Department of Nano-Otpical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793 Republic of Korea.

ABSTRACT
Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

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Optical properties of InGaN NSs grown on CNT/Si template.(a) SEM top image and (b) CL image of InGaN NSs/CNT. CL spectra of (c) one InGaN NSs and (d) multiple InGaN NSs.
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f6: Optical properties of InGaN NSs grown on CNT/Si template.(a) SEM top image and (b) CL image of InGaN NSs/CNT. CL spectra of (c) one InGaN NSs and (d) multiple InGaN NSs.

Mentions: Figure 6(a,b) depict SEM and the panchromatic cathodoluminescence (CL) images, respectively, of the InGaN NSs on the CNT/Si template. The bright CL image is strongly consistent with the SEM image of the InGaN NSs. This indicates the excellent optical properties of the InGaN NSs. We measured a particularly strong panchromatic CL emission from InGaN NSs on the CNTs, as shown in Fig. 6(c). The CL wavelength and FWHM of the CL spectrum are 493.4 and 79.4 nm, respectively. In general, the emission FWHM of the InGaN active layer of GaN-based LEDs is ~25 nm at ~500 nm, which is much lower than the FWHM of our InGaN NSs on CNTs. Despite growing the InGaN NSs on the CNT template, we surmise that this broad emission spectrum could be caused by the non-uniform In distribution or the broad size distribution of the InGaN NSs. To clarify the origin of the broad emission spectrum, we measured the CL spectrum of one InGaN NSs at position A, shown in Fig. 6(d). The spectrum shows two emission peaks at 528 nm and 612 nm. This implies that the broad emission of the InGaN NSs does not mainly originate from the size distribution of InGaN NSs, but from two or more In compositions among the InGaN NSs because InGaN NSs show a few crystallographic planes, yielding the different In incorporation rate to the different crystal planes.


Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.

Park JY, Man Song K, Min YS, Choi CJ, Seok Kim Y, Lee SN - Sci Rep (2015)

Optical properties of InGaN NSs grown on CNT/Si template.(a) SEM top image and (b) CL image of InGaN NSs/CNT. CL spectra of (c) one InGaN NSs and (d) multiple InGaN NSs.
© Copyright Policy - open-access
Related In: Results  -  Collection

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f6: Optical properties of InGaN NSs grown on CNT/Si template.(a) SEM top image and (b) CL image of InGaN NSs/CNT. CL spectra of (c) one InGaN NSs and (d) multiple InGaN NSs.
Mentions: Figure 6(a,b) depict SEM and the panchromatic cathodoluminescence (CL) images, respectively, of the InGaN NSs on the CNT/Si template. The bright CL image is strongly consistent with the SEM image of the InGaN NSs. This indicates the excellent optical properties of the InGaN NSs. We measured a particularly strong panchromatic CL emission from InGaN NSs on the CNTs, as shown in Fig. 6(c). The CL wavelength and FWHM of the CL spectrum are 493.4 and 79.4 nm, respectively. In general, the emission FWHM of the InGaN active layer of GaN-based LEDs is ~25 nm at ~500 nm, which is much lower than the FWHM of our InGaN NSs on CNTs. Despite growing the InGaN NSs on the CNT template, we surmise that this broad emission spectrum could be caused by the non-uniform In distribution or the broad size distribution of the InGaN NSs. To clarify the origin of the broad emission spectrum, we measured the CL spectrum of one InGaN NSs at position A, shown in Fig. 6(d). The spectrum shows two emission peaks at 528 nm and 612 nm. This implies that the broad emission of the InGaN NSs does not mainly originate from the size distribution of InGaN NSs, but from two or more In compositions among the InGaN NSs because InGaN NSs show a few crystallographic planes, yielding the different In incorporation rate to the different crystal planes.

Bottom Line: The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs.Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm.Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

View Article: PubMed Central - PubMed

Affiliation: Department of Nano-Otpical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793 Republic of Korea.

ABSTRACT
Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

No MeSH data available.


Related in: MedlinePlus