Limits...
Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.

Park JY, Man Song K, Min YS, Choi CJ, Seok Kim Y, Lee SN - Sci Rep (2015)

Bottom Line: The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs.Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm.Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

View Article: PubMed Central - PubMed

Affiliation: Department of Nano-Otpical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793 Republic of Korea.

ABSTRACT
Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

No MeSH data available.


Related in: MedlinePlus

Compositional study of InGaN NSs grown on CNT/Si template using STEM.STEM image of InGaN NSs on carbon nanotube and STEM EDS mapping images of Ga, In, N, C, O, Si, Al, and Fe atoms.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC4644961&req=5

f5: Compositional study of InGaN NSs grown on CNT/Si template using STEM.STEM image of InGaN NSs on carbon nanotube and STEM EDS mapping images of Ga, In, N, C, O, Si, Al, and Fe atoms.

Mentions: Figure 5 presents the scanning transmission electron microscopy (STEM) Z-contrast image and corresponding EDS maps for Ga, In, and N atoms taken from the InGaN NSs grown on the CNT/Si template. The distributions of Ga, In, N and C atoms clearly match the positions of the InGaN NSs and CNTs shown in the STEM image. However, the distributions of Si, Al, and Fe atoms are inconsistent with the STEM image of the InGaN NSs on CNT within the detection limit of the instrument, indicating that the Si, Fe, and Al atoms do not diffuse from the Si substrate and Fe/Al catalyst with the growth of the InGaN NSs. From these results, we believe that InGaN NSs can be directly grown on CNTs without catalytic assistance.


Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.

Park JY, Man Song K, Min YS, Choi CJ, Seok Kim Y, Lee SN - Sci Rep (2015)

Compositional study of InGaN NSs grown on CNT/Si template using STEM.STEM image of InGaN NSs on carbon nanotube and STEM EDS mapping images of Ga, In, N, C, O, Si, Al, and Fe atoms.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4644961&req=5

f5: Compositional study of InGaN NSs grown on CNT/Si template using STEM.STEM image of InGaN NSs on carbon nanotube and STEM EDS mapping images of Ga, In, N, C, O, Si, Al, and Fe atoms.
Mentions: Figure 5 presents the scanning transmission electron microscopy (STEM) Z-contrast image and corresponding EDS maps for Ga, In, and N atoms taken from the InGaN NSs grown on the CNT/Si template. The distributions of Ga, In, N and C atoms clearly match the positions of the InGaN NSs and CNTs shown in the STEM image. However, the distributions of Si, Al, and Fe atoms are inconsistent with the STEM image of the InGaN NSs on CNT within the detection limit of the instrument, indicating that the Si, Fe, and Al atoms do not diffuse from the Si substrate and Fe/Al catalyst with the growth of the InGaN NSs. From these results, we believe that InGaN NSs can be directly grown on CNTs without catalytic assistance.

Bottom Line: The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs.Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm.Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

View Article: PubMed Central - PubMed

Affiliation: Department of Nano-Otpical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793 Republic of Korea.

ABSTRACT
Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

No MeSH data available.


Related in: MedlinePlus