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Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.

Park JY, Man Song K, Min YS, Choi CJ, Seok Kim Y, Lee SN - Sci Rep (2015)

Bottom Line: The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs.Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm.Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

View Article: PubMed Central - PubMed

Affiliation: Department of Nano-Otpical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793 Republic of Korea.

ABSTRACT
Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

No MeSH data available.


Related in: MedlinePlus

Crystallinity of InGaN NSs on CNT/Si template.(a) TEM images of CNT on Si substrate and (b) InGaN NSs. (c,d) TEM images of InGaN NSs on CNTs. The selected-area electron diffraction patterns (SADPs) of (e) multiple InGaN NSs and (f) one InGaN NS
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f4: Crystallinity of InGaN NSs on CNT/Si template.(a) TEM images of CNT on Si substrate and (b) InGaN NSs. (c,d) TEM images of InGaN NSs on CNTs. The selected-area electron diffraction patterns (SADPs) of (e) multiple InGaN NSs and (f) one InGaN NS

Mentions: The microstructural properties of InGaN NSs on the CNT/Si template were analyzed by transmission electron microscopy (TEM). Figure 4(a) shows that the InGaN NSs contain several types of polygonal crystals, which could be different thermodynamically stable facets. The dimensions of the InGaN NSs are evaluated to range from 100 to 200 nm, consistent with the SEM results (Fig. 1). Notably, the InGaN NSs are tightly bound to the CNTs, as shown in Fig. 4(b). The InGaN NSs were particularly well developed at the edges of the CNTs. This strongly suggests that InGaN NSs can be directly grown on CNTs. Furthermore, the selected area electron diffraction (SAED) pattern obtained from the interface between the InGaN NSs and the CNT shows well-defined sharp spots, corresponding to the10 plane of wurtzite InGaN, along with diffuse rings associated with the CNTs, as shown in Fig. 4(c). However, the SAED pattern obtained from several InGaN NSs crystallites exhibits numerous weak diffraction spots combined with sharp rings of diffracted intensity, as shown in Fig. 4(d), which is characteristic of a polycrystalline substance. Based on the SAED examinations, single-crystalline InGaN NSs were clearly grown on the CNT/Si templates, although the individual crystallites were oriented completely at random with respect to each other.


Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.

Park JY, Man Song K, Min YS, Choi CJ, Seok Kim Y, Lee SN - Sci Rep (2015)

Crystallinity of InGaN NSs on CNT/Si template.(a) TEM images of CNT on Si substrate and (b) InGaN NSs. (c,d) TEM images of InGaN NSs on CNTs. The selected-area electron diffraction patterns (SADPs) of (e) multiple InGaN NSs and (f) one InGaN NS
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4644961&req=5

f4: Crystallinity of InGaN NSs on CNT/Si template.(a) TEM images of CNT on Si substrate and (b) InGaN NSs. (c,d) TEM images of InGaN NSs on CNTs. The selected-area electron diffraction patterns (SADPs) of (e) multiple InGaN NSs and (f) one InGaN NS
Mentions: The microstructural properties of InGaN NSs on the CNT/Si template were analyzed by transmission electron microscopy (TEM). Figure 4(a) shows that the InGaN NSs contain several types of polygonal crystals, which could be different thermodynamically stable facets. The dimensions of the InGaN NSs are evaluated to range from 100 to 200 nm, consistent with the SEM results (Fig. 1). Notably, the InGaN NSs are tightly bound to the CNTs, as shown in Fig. 4(b). The InGaN NSs were particularly well developed at the edges of the CNTs. This strongly suggests that InGaN NSs can be directly grown on CNTs. Furthermore, the selected area electron diffraction (SAED) pattern obtained from the interface between the InGaN NSs and the CNT shows well-defined sharp spots, corresponding to the10 plane of wurtzite InGaN, along with diffuse rings associated with the CNTs, as shown in Fig. 4(c). However, the SAED pattern obtained from several InGaN NSs crystallites exhibits numerous weak diffraction spots combined with sharp rings of diffracted intensity, as shown in Fig. 4(d), which is characteristic of a polycrystalline substance. Based on the SAED examinations, single-crystalline InGaN NSs were clearly grown on the CNT/Si templates, although the individual crystallites were oriented completely at random with respect to each other.

Bottom Line: The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs.Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm.Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

View Article: PubMed Central - PubMed

Affiliation: Department of Nano-Otpical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793 Republic of Korea.

ABSTRACT
Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

No MeSH data available.


Related in: MedlinePlus