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Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.

Park JY, Man Song K, Min YS, Choi CJ, Seok Kim Y, Lee SN - Sci Rep (2015)

Bottom Line: The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs.Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm.Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

View Article: PubMed Central - PubMed

Affiliation: Department of Nano-Otpical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793 Republic of Korea.

ABSTRACT
Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

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Related in: MedlinePlus

High-resolution X-ray diffraction (HR-XRD) Ω-2θ wide scans of InGaN NSs grown on CNT/Si templates.Two peaks are indexed to (001) GaN and (004) C. Inset: HR-XRD peaks of (002) InGaN and (002) GaN, indicating the nitride nanocrystals grown on CNT could be aligned to the (002) of the InGaN and GaN epilayer.
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f3: High-resolution X-ray diffraction (HR-XRD) Ω-2θ wide scans of InGaN NSs grown on CNT/Si templates.Two peaks are indexed to (001) GaN and (004) C. Inset: HR-XRD peaks of (002) InGaN and (002) GaN, indicating the nitride nanocrystals grown on CNT could be aligned to the (002) of the InGaN and GaN epilayer.

Mentions: The structural and compositional properties of the InGaN NSs on CNT/Si template were characterized by high-resolution X-ray diffraction (HR-XRD). Figure 3 shows the high-resolution ω-2θ scan of InGaN NSs on CNT/Si template. Three peaks appear at 34.5°, 36.9°, and 49.8°. No peaks related to other components are observed at the resolution of the X-ray diffractometer. The peaks at 34.5° and 36.9° are indexed to the (002)GaN and (101)GaN planes, while the peak at 49.8° may be indexed to (004)C originating from the CNT. This implies that the crystal planes of the GaN columns consist of (002)GaN and (101)GaN. However, we believe that (002)GaN was the main crystallographic plane, rather than (101)GaN, because the (002)GaN peak is higher in intensity.


Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.

Park JY, Man Song K, Min YS, Choi CJ, Seok Kim Y, Lee SN - Sci Rep (2015)

High-resolution X-ray diffraction (HR-XRD) Ω-2θ wide scans of InGaN NSs grown on CNT/Si templates.Two peaks are indexed to (001) GaN and (004) C. Inset: HR-XRD peaks of (002) InGaN and (002) GaN, indicating the nitride nanocrystals grown on CNT could be aligned to the (002) of the InGaN and GaN epilayer.
© Copyright Policy - open-access
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4644961&req=5

f3: High-resolution X-ray diffraction (HR-XRD) Ω-2θ wide scans of InGaN NSs grown on CNT/Si templates.Two peaks are indexed to (001) GaN and (004) C. Inset: HR-XRD peaks of (002) InGaN and (002) GaN, indicating the nitride nanocrystals grown on CNT could be aligned to the (002) of the InGaN and GaN epilayer.
Mentions: The structural and compositional properties of the InGaN NSs on CNT/Si template were characterized by high-resolution X-ray diffraction (HR-XRD). Figure 3 shows the high-resolution ω-2θ scan of InGaN NSs on CNT/Si template. Three peaks appear at 34.5°, 36.9°, and 49.8°. No peaks related to other components are observed at the resolution of the X-ray diffractometer. The peaks at 34.5° and 36.9° are indexed to the (002)GaN and (101)GaN planes, while the peak at 49.8° may be indexed to (004)C originating from the CNT. This implies that the crystal planes of the GaN columns consist of (002)GaN and (101)GaN. However, we believe that (002)GaN was the main crystallographic plane, rather than (101)GaN, because the (002)GaN peak is higher in intensity.

Bottom Line: The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs.Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm.Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

View Article: PubMed Central - PubMed

Affiliation: Department of Nano-Otpical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793 Republic of Korea.

ABSTRACT
Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

No MeSH data available.


Related in: MedlinePlus