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Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.

Park JY, Man Song K, Min YS, Choi CJ, Seok Kim Y, Lee SN - Sci Rep (2015)

Bottom Line: The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs.Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm.Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

View Article: PubMed Central - PubMed

Affiliation: Department of Nano-Otpical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793 Republic of Korea.

ABSTRACT
Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

No MeSH data available.


Related in: MedlinePlus

SEM images of InGaN NSs grown on CNT/Si templates.(a) SEM images of CNT forest, (b) InGaN NSs grown on CNT/SiO2/Si template using Fe/Al catalysts. (c) Highly magnified SEM image of InGaN NSs and (d) bottom images of CNT surrounded by GaN crystallites.
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f1: SEM images of InGaN NSs grown on CNT/Si templates.(a) SEM images of CNT forest, (b) InGaN NSs grown on CNT/SiO2/Si template using Fe/Al catalysts. (c) Highly magnified SEM image of InGaN NSs and (d) bottom images of CNT surrounded by GaN crystallites.

Mentions: Figures 1(a,b) depict scanning electron microscopy (SEM) images of the CNT/Si template and the InGaN NSs grown on the CNT/Si template, respectively. Vertically aligned CNTs of 4.9 μm in length are observed on Fe/Al catalysts on the SiO2/Si template. The tilted SEM image shown in Fig. 1(b) shows the InGaN NSs grown vertically with respect to the substrate, indicating that InGaN NSs can be directly grown on a CNT/Si template using metalorganic chemical vapor deposition (MOCVD). The images indicate that InGaN NS formation was particularly successful at the ends of CNTs. The uniform coverage of InGaN NSs on the CNT bundles is shown in Fig. 1(c). From the SEM results, the InGaN NSs are polygonal crystal shapes with dimensions of 100–270 nm, which correspond to thermodynamically stable crystal planes, such as (0001) and (1010), in the wurtzite III-nitride crystal structure. The bundled CNTs are embedded with discontinuous hexagonal islands of crystals, which are not observed on the CNT/Si template shown in Fig. 1(a). SEM-energy dispersive X-ray spectroscopy (EDS) results show that these small hexagonal crystals are crystalline GaN, as shown in Fig. 1(b,d). Based on these results, we surmise that the nucleation and growth of hexagonal GaN crystals occurs on the regions of the SiO2/Si template with the Fe/Al catalysts where the Ga and N precursors pass through spaces between the CNTs, encasing the CNT bundles with hexagonal GaN crystals, as shown in Fig. 2(a–c).


Nanostructures of Indium Gallium Nitride Crystals Grown on Carbon Nanotubes.

Park JY, Man Song K, Min YS, Choi CJ, Seok Kim Y, Lee SN - Sci Rep (2015)

SEM images of InGaN NSs grown on CNT/Si templates.(a) SEM images of CNT forest, (b) InGaN NSs grown on CNT/SiO2/Si template using Fe/Al catalysts. (c) Highly magnified SEM image of InGaN NSs and (d) bottom images of CNT surrounded by GaN crystallites.
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Related In: Results  -  Collection

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f1: SEM images of InGaN NSs grown on CNT/Si templates.(a) SEM images of CNT forest, (b) InGaN NSs grown on CNT/SiO2/Si template using Fe/Al catalysts. (c) Highly magnified SEM image of InGaN NSs and (d) bottom images of CNT surrounded by GaN crystallites.
Mentions: Figures 1(a,b) depict scanning electron microscopy (SEM) images of the CNT/Si template and the InGaN NSs grown on the CNT/Si template, respectively. Vertically aligned CNTs of 4.9 μm in length are observed on Fe/Al catalysts on the SiO2/Si template. The tilted SEM image shown in Fig. 1(b) shows the InGaN NSs grown vertically with respect to the substrate, indicating that InGaN NSs can be directly grown on a CNT/Si template using metalorganic chemical vapor deposition (MOCVD). The images indicate that InGaN NS formation was particularly successful at the ends of CNTs. The uniform coverage of InGaN NSs on the CNT bundles is shown in Fig. 1(c). From the SEM results, the InGaN NSs are polygonal crystal shapes with dimensions of 100–270 nm, which correspond to thermodynamically stable crystal planes, such as (0001) and (1010), in the wurtzite III-nitride crystal structure. The bundled CNTs are embedded with discontinuous hexagonal islands of crystals, which are not observed on the CNT/Si template shown in Fig. 1(a). SEM-energy dispersive X-ray spectroscopy (EDS) results show that these small hexagonal crystals are crystalline GaN, as shown in Fig. 1(b,d). Based on these results, we surmise that the nucleation and growth of hexagonal GaN crystals occurs on the regions of the SiO2/Si template with the Fe/Al catalysts where the Ga and N precursors pass through spaces between the CNTs, encasing the CNT bundles with hexagonal GaN crystals, as shown in Fig. 2(a–c).

Bottom Line: The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs.Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm.Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

View Article: PubMed Central - PubMed

Affiliation: Department of Nano-Otpical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793 Republic of Korea.

ABSTRACT
Nanostructure (NS) InGaN crystals were grown on carbon nanotubes (CNTs) using metalorganic chemical vapor deposition. The NS-InGaN crystals, grown on a ~5-μm-long CNT/Si template, were estimated to be ~100-270 nm in size. Transmission electron microscope examinations revealed that single-crystalline InGaN NSs were formed with different crystal facets. The observed green (~500 nm) cathodoluminescence (CL) emission was consistent with the surface image of the NS-InGaN crystallites, indicating excellent optical properties of the InGaN NSs on CNTs. Moreover, the CL spectrum of InGaN NSs showed a broad emission band from 490 to 600 nm. Based on these results, we believe that InGaN NSs grown on CNTs could aid in overcoming the green gap in LED technologies.

No MeSH data available.


Related in: MedlinePlus