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Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications.

Chen LC, Weng CY - Nanoscale Res Lett (2015)

Bottom Line: Photocurrents from 300 to 900 nm were measured.The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm.Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

View Article: PubMed Central - PubMed

Affiliation: Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec.3, Chung-Hsiao E. Rd., Taipei, 106, Taiwan. ocean@ntut.edu.tw.

ABSTRACT
This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were measured. The photocurrent is high in two ranges of wavelength, which are 300-460 nm and 520-800 nm. The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm. Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

No MeSH data available.


Photocurrent as a function of wavelength of incident light for a graphene/MAPbI3/TiO2/porous Si heterostructure at a bias of 5 V
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Fig6: Photocurrent as a function of wavelength of incident light for a graphene/MAPbI3/TiO2/porous Si heterostructure at a bias of 5 V

Mentions: Figure 6 plots the photocurrent as a function of the wavelength of incident light for a graphene/MAPbI3/TiO2/porous Si heterostructure at a reverse bias of 5 V. The photocurrent is high in two ranges of wavelength from 300 to 450 nm and from 520 to 780 nm. The former corresponds to TiO2 and the latter corresponds to the MAPbI3. Two photocurrents tail off at wavelengths of 460 and 780 nm. As compared to the pure TiO2 with an absorption edge of 400 nm, the tailing off at 460 nm suggests the presence of traps in the band gap of the TiO2 that are generated by the presence of impurities from MAPbI3 [20]. The tailing off at 770 nm suggests the band gap 1.6 eV of the MAPbI3. The photocurrent plateau covers all visible wavelengths (360 to 780 nm) except for those of cyan from 460 to 520 nm. Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be used in a cyan sensor.Fig. 6


Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications.

Chen LC, Weng CY - Nanoscale Res Lett (2015)

Photocurrent as a function of wavelength of incident light for a graphene/MAPbI3/TiO2/porous Si heterostructure at a bias of 5 V
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4608950&req=5

Fig6: Photocurrent as a function of wavelength of incident light for a graphene/MAPbI3/TiO2/porous Si heterostructure at a bias of 5 V
Mentions: Figure 6 plots the photocurrent as a function of the wavelength of incident light for a graphene/MAPbI3/TiO2/porous Si heterostructure at a reverse bias of 5 V. The photocurrent is high in two ranges of wavelength from 300 to 450 nm and from 520 to 780 nm. The former corresponds to TiO2 and the latter corresponds to the MAPbI3. Two photocurrents tail off at wavelengths of 460 and 780 nm. As compared to the pure TiO2 with an absorption edge of 400 nm, the tailing off at 460 nm suggests the presence of traps in the band gap of the TiO2 that are generated by the presence of impurities from MAPbI3 [20]. The tailing off at 770 nm suggests the band gap 1.6 eV of the MAPbI3. The photocurrent plateau covers all visible wavelengths (360 to 780 nm) except for those of cyan from 460 to 520 nm. Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be used in a cyan sensor.Fig. 6

Bottom Line: Photocurrents from 300 to 900 nm were measured.The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm.Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

View Article: PubMed Central - PubMed

Affiliation: Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec.3, Chung-Hsiao E. Rd., Taipei, 106, Taiwan. ocean@ntut.edu.tw.

ABSTRACT
This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were measured. The photocurrent is high in two ranges of wavelength, which are 300-460 nm and 520-800 nm. The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm. Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

No MeSH data available.