Limits...
Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications.

Chen LC, Weng CY - Nanoscale Res Lett (2015)

Bottom Line: Photocurrents from 300 to 900 nm were measured.The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm.Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

View Article: PubMed Central - PubMed

Affiliation: Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec.3, Chung-Hsiao E. Rd., Taipei, 106, Taiwan. ocean@ntut.edu.tw.

ABSTRACT
This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were measured. The photocurrent is high in two ranges of wavelength, which are 300-460 nm and 520-800 nm. The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm. Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

No MeSH data available.


I-V characteristics of graphene/MAPbI3/TiO2/Si heterostructure in darkness. Inset schematically depicts the graphene/MAPbI3/TiO2/Si heterostructure diode
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
getmorefigures.php?uid=PMC4608950&req=5

Fig4: I-V characteristics of graphene/MAPbI3/TiO2/Si heterostructure in darkness. Inset schematically depicts the graphene/MAPbI3/TiO2/Si heterostructure diode

Mentions: Figure 4 plots the I-V characteristics of the graphene/MAPbI3/TiO2/porous Si heterostructure diode in darkness. The turn-on voltage of the graphene/MAPbI3/TiO2/porous Si heterostructure diode is approximately 2.5 V, and its breakdown voltage is over 15 V. The inset schematically depicts the graphene/MAPbI3/TiO2/porous Si heterostructure diode. The graphene/MAPbI3/TiO2/porous Si that was etched for 10 min exhibited the lowest series resistance, because it had the highest effective contact area of porous silicon and accommodated the largest MAPbI3/TiO2 bulk junction, relative to the polished silicon substrate, as shown in Figs. 1b, d and 5. As mentioned above, the purity and grain size of MAPbI3 on the porous silicon substrate with etching for 10 min is higher than that of the sample with etching for 5 min. It is believed that the TiO2 nanoparticle deposited on the substrate etched for 10 min can provide more surface area and good contact, leading to less MAI loss and better crystal quality. The morphology of the Si substrate influences the formation of the crystalline MAPbI3 and optoelectronic characteristics of MAPbI3-based devices.Fig. 4


Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications.

Chen LC, Weng CY - Nanoscale Res Lett (2015)

I-V characteristics of graphene/MAPbI3/TiO2/Si heterostructure in darkness. Inset schematically depicts the graphene/MAPbI3/TiO2/Si heterostructure diode
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4608950&req=5

Fig4: I-V characteristics of graphene/MAPbI3/TiO2/Si heterostructure in darkness. Inset schematically depicts the graphene/MAPbI3/TiO2/Si heterostructure diode
Mentions: Figure 4 plots the I-V characteristics of the graphene/MAPbI3/TiO2/porous Si heterostructure diode in darkness. The turn-on voltage of the graphene/MAPbI3/TiO2/porous Si heterostructure diode is approximately 2.5 V, and its breakdown voltage is over 15 V. The inset schematically depicts the graphene/MAPbI3/TiO2/porous Si heterostructure diode. The graphene/MAPbI3/TiO2/porous Si that was etched for 10 min exhibited the lowest series resistance, because it had the highest effective contact area of porous silicon and accommodated the largest MAPbI3/TiO2 bulk junction, relative to the polished silicon substrate, as shown in Figs. 1b, d and 5. As mentioned above, the purity and grain size of MAPbI3 on the porous silicon substrate with etching for 10 min is higher than that of the sample with etching for 5 min. It is believed that the TiO2 nanoparticle deposited on the substrate etched for 10 min can provide more surface area and good contact, leading to less MAI loss and better crystal quality. The morphology of the Si substrate influences the formation of the crystalline MAPbI3 and optoelectronic characteristics of MAPbI3-based devices.Fig. 4

Bottom Line: Photocurrents from 300 to 900 nm were measured.The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm.Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

View Article: PubMed Central - PubMed

Affiliation: Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec.3, Chung-Hsiao E. Rd., Taipei, 106, Taiwan. ocean@ntut.edu.tw.

ABSTRACT
This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were measured. The photocurrent is high in two ranges of wavelength, which are 300-460 nm and 520-800 nm. The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm. Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

No MeSH data available.