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Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications.

Chen LC, Weng CY - Nanoscale Res Lett (2015)

Bottom Line: Photocurrents from 300 to 900 nm were measured.The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm.Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

View Article: PubMed Central - PubMed

Affiliation: Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec.3, Chung-Hsiao E. Rd., Taipei, 106, Taiwan. ocean@ntut.edu.tw.

ABSTRACT
This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were measured. The photocurrent is high in two ranges of wavelength, which are 300-460 nm and 520-800 nm. The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm. Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

No MeSH data available.


RT PL spectrum of graphene/MAPbI3/TiO2/porous Si heterostructure
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Fig3: RT PL spectrum of graphene/MAPbI3/TiO2/porous Si heterostructure

Mentions: Figure 3 shows the room-temperature photoluminescence (RT PL) spectrum of the MAPbI3/TiO2/porous Si heterostructure. From all samples, the dominant peak at 1.6 eV (776 nm), labeled C, corresponds to the optical band gap of the MAPbI3 films, which have a direct band gap that can be attributed to the recombination of the near band-to-band (B-B) [1, 16]. Other than peak C, two weak peaks, A and B, are observed. The A peak at 382 nm corresponds to the recombination of the B-B of TiO2 [17]. Peak B at 566 nm is associated with the emission from defects in TiO2 [17–19]. The PL intensity increases with the etching time of the silicon substrate. That may be attributed to the amount of the TiO2 and MAPbI3 penetrated into the porous silicon substrates to fill in the porous increases due to the dimension increase of the porous when etching time increases.Fig. 3


Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications.

Chen LC, Weng CY - Nanoscale Res Lett (2015)

RT PL spectrum of graphene/MAPbI3/TiO2/porous Si heterostructure
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4608950&req=5

Fig3: RT PL spectrum of graphene/MAPbI3/TiO2/porous Si heterostructure
Mentions: Figure 3 shows the room-temperature photoluminescence (RT PL) spectrum of the MAPbI3/TiO2/porous Si heterostructure. From all samples, the dominant peak at 1.6 eV (776 nm), labeled C, corresponds to the optical band gap of the MAPbI3 films, which have a direct band gap that can be attributed to the recombination of the near band-to-band (B-B) [1, 16]. Other than peak C, two weak peaks, A and B, are observed. The A peak at 382 nm corresponds to the recombination of the B-B of TiO2 [17]. Peak B at 566 nm is associated with the emission from defects in TiO2 [17–19]. The PL intensity increases with the etching time of the silicon substrate. That may be attributed to the amount of the TiO2 and MAPbI3 penetrated into the porous silicon substrates to fill in the porous increases due to the dimension increase of the porous when etching time increases.Fig. 3

Bottom Line: Photocurrents from 300 to 900 nm were measured.The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm.Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

View Article: PubMed Central - PubMed

Affiliation: Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec.3, Chung-Hsiao E. Rd., Taipei, 106, Taiwan. ocean@ntut.edu.tw.

ABSTRACT
This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were measured. The photocurrent is high in two ranges of wavelength, which are 300-460 nm and 520-800 nm. The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm. Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

No MeSH data available.