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Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications.

Chen LC, Weng CY - Nanoscale Res Lett (2015)

Bottom Line: Photocurrents from 300 to 900 nm were measured.The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm.Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

View Article: PubMed Central - PubMed

Affiliation: Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec.3, Chung-Hsiao E. Rd., Taipei, 106, Taiwan. ocean@ntut.edu.tw.

ABSTRACT
This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were measured. The photocurrent is high in two ranges of wavelength, which are 300-460 nm and 520-800 nm. The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm. Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

No MeSH data available.


XRD patterns of MAPbI3 perovskite/TiO2 on porous Si substrate
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Fig2: XRD patterns of MAPbI3 perovskite/TiO2 on porous Si substrate

Mentions: Figure 2 shows the XRD patterns of the MAPbI3 perovskite/TiO2 on the porous Si substrate following etching for 5 and 10 min. The spectra include seven main peaks at 14.08°, 19.9°, 23.3°, 28.42°, 31.85°, 40.28°, and 43.21°, which correspond to the (110), (200), (211), (220), (310), (224), and (314) for the CH3NH3PbI3 perovskite, respectively. However, the PbI2 (004), (008), and (0012) peaks located at 12.58°, 25.81°, and 38.58°, respectively, can be observed in both samples. The coexistence of the two CH3NH3PbI3 and PbI2 phases can be observed in the MAPbI3 perovskite layers. This is due to the post annealing process leading to thermal decomposition of MAI and the formation of the PbI2 phase. Previous reports using transient photoluminescence exhibit the presence of the PbI2 in MAPbI3 active light harvesting layers that can enhance the carrier transportation to the electrode [12–14]. On the other hand, to further elucidate detailed structural information, the grain size G was calculated according to Scherrer’s equation [15]. The G grain sizes of the samples that were etched for 5 and 10 min are 22.2 and 29.5 nm, respectively. The quality of MAPbI3 on the porous silicon substrate with etching for 10 min is higher than that of the sample following etching for 5 min. The strongest signal from the samples with etching for 5 min is that of the (110) plane. However, the most intense signal of the samples that were etched for 10 min is that of the (101) plane. The morphology of the Si substrate influences the formation of the crystalline MAPbI3.Fig. 2


Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications.

Chen LC, Weng CY - Nanoscale Res Lett (2015)

XRD patterns of MAPbI3 perovskite/TiO2 on porous Si substrate
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4608950&req=5

Fig2: XRD patterns of MAPbI3 perovskite/TiO2 on porous Si substrate
Mentions: Figure 2 shows the XRD patterns of the MAPbI3 perovskite/TiO2 on the porous Si substrate following etching for 5 and 10 min. The spectra include seven main peaks at 14.08°, 19.9°, 23.3°, 28.42°, 31.85°, 40.28°, and 43.21°, which correspond to the (110), (200), (211), (220), (310), (224), and (314) for the CH3NH3PbI3 perovskite, respectively. However, the PbI2 (004), (008), and (0012) peaks located at 12.58°, 25.81°, and 38.58°, respectively, can be observed in both samples. The coexistence of the two CH3NH3PbI3 and PbI2 phases can be observed in the MAPbI3 perovskite layers. This is due to the post annealing process leading to thermal decomposition of MAI and the formation of the PbI2 phase. Previous reports using transient photoluminescence exhibit the presence of the PbI2 in MAPbI3 active light harvesting layers that can enhance the carrier transportation to the electrode [12–14]. On the other hand, to further elucidate detailed structural information, the grain size G was calculated according to Scherrer’s equation [15]. The G grain sizes of the samples that were etched for 5 and 10 min are 22.2 and 29.5 nm, respectively. The quality of MAPbI3 on the porous silicon substrate with etching for 10 min is higher than that of the sample following etching for 5 min. The strongest signal from the samples with etching for 5 min is that of the (110) plane. However, the most intense signal of the samples that were etched for 10 min is that of the (101) plane. The morphology of the Si substrate influences the formation of the crystalline MAPbI3.Fig. 2

Bottom Line: Photocurrents from 300 to 900 nm were measured.The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm.Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

View Article: PubMed Central - PubMed

Affiliation: Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec.3, Chung-Hsiao E. Rd., Taipei, 106, Taiwan. ocean@ntut.edu.tw.

ABSTRACT
This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were measured. The photocurrent is high in two ranges of wavelength, which are 300-460 nm and 520-800 nm. The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm. Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

No MeSH data available.