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Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications.

Chen LC, Weng CY - Nanoscale Res Lett (2015)

Bottom Line: Photocurrents from 300 to 900 nm were measured.The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm.Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

View Article: PubMed Central - PubMed

Affiliation: Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec.3, Chung-Hsiao E. Rd., Taipei, 106, Taiwan. ocean@ntut.edu.tw.

ABSTRACT
This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were measured. The photocurrent is high in two ranges of wavelength, which are 300-460 nm and 520-800 nm. The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm. Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

No MeSH data available.


Schematic top view (a, c) and cross section (b, d) of MAPbI3/TiO2 on porous Si heterostructure
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Fig1: Schematic top view (a, c) and cross section (b, d) of MAPbI3/TiO2 on porous Si heterostructure

Mentions: Figure 1 displays the top and cross-sectional FESEM images of the MAPbI3 perovskite/TiO2 on the porous Si substrates after etching for various times. Figure 1a, b presents the top and cross-sectional FESEM images of the MAPbI3 perovskite/TiO2 on the porous Si substrates that had been etched for 5 min. Figure 1c, d presents the top and cross-sectional FESEM images of the MAPbI3 perovskite/TiO2 on the porous Si substrates after etching for 10 min. The MAPbI3 perovskite was coated on the TiO2 layer, and the interface between the MAPbI3 perovskite and TiO2 layer formed the heterojunction. As presented in Fig. 1b, d, the MAPbI3 perovskite/TiO2 heterojunction penetrated into the porous silicon substrate. The thickness of the MAPbI3 perovskite films on the 5- and 10-min etched porous silicon substrates was around 500 nm.Fig. 1


Optoelectronic Properties of MAPbI3 Perovskite/Titanium Dioxide Heterostructures on Porous Silicon Substrates for Cyan Sensor Applications.

Chen LC, Weng CY - Nanoscale Res Lett (2015)

Schematic top view (a, c) and cross section (b, d) of MAPbI3/TiO2 on porous Si heterostructure
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4608950&req=5

Fig1: Schematic top view (a, c) and cross section (b, d) of MAPbI3/TiO2 on porous Si heterostructure
Mentions: Figure 1 displays the top and cross-sectional FESEM images of the MAPbI3 perovskite/TiO2 on the porous Si substrates after etching for various times. Figure 1a, b presents the top and cross-sectional FESEM images of the MAPbI3 perovskite/TiO2 on the porous Si substrates that had been etched for 5 min. Figure 1c, d presents the top and cross-sectional FESEM images of the MAPbI3 perovskite/TiO2 on the porous Si substrates after etching for 10 min. The MAPbI3 perovskite was coated on the TiO2 layer, and the interface between the MAPbI3 perovskite and TiO2 layer formed the heterojunction. As presented in Fig. 1b, d, the MAPbI3 perovskite/TiO2 heterojunction penetrated into the porous silicon substrate. The thickness of the MAPbI3 perovskite films on the 5- and 10-min etched porous silicon substrates was around 500 nm.Fig. 1

Bottom Line: Photocurrents from 300 to 900 nm were measured.The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm.Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

View Article: PubMed Central - PubMed

Affiliation: Department of Electro-optical Engineering, National Taipei University of Technology, 1, sec.3, Chung-Hsiao E. Rd., Taipei, 106, Taiwan. ocean@ntut.edu.tw.

ABSTRACT
This work elucidates the optoelectronic properties of graphene/methylammonium lead iodide (MAPbI3)/titanium dioxide (TiO2)/porous Si heterostructure diodes. The porous silicon substrates can accommodate more MAPbI3/TiO2 than the polished silicon substrate such that the MAPbI3/TiO2/porous Si substrate heterostructures have better optoelectronic properties. Photocurrents from 300 to 900 nm were measured. The photocurrent is high in two ranges of wavelength, which are 300-460 nm and 520-800 nm. The photocurrent plateau covers all visible light (360 to 780 nm) except for cyan between 460 and 520 nm. Therefore, the graphene/MAPbI3/TiO2/porous Si heterostructure can be utilized as cyan sensors.

No MeSH data available.