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MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation.

E Y, Hao Z, Yu J, Wu C, Liu R, Wang L, Xiong B, Wang J, Han Y, Sun C, Luo Y - Nanoscale Res Lett (2015)

Bottom Line: The influence of growth conditions on the morphologies of AlN NWs is carefully investigated.Island-like films are found to grow between the NWs due to poor migration ability of Al adatoms.Increasing the V/III ratio can efficiently suppress the growth of Al-polar AlN films.

View Article: PubMed Central - PubMed

Affiliation: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, People's Republic of China. eyx11@mails.tsinghua.edu.cn.

ABSTRACT
By introducing an aluminization process to achieve nucleation of nanowires (NWs), spontaneous growth of AlN NWs on Si substrates has been realized by plasma-assisted molecular beam epitaxy. The AlN NWs are grown from the nuclei formed by the aluminization process, and the NW density and diameter can be controlled by the aluminization parameters. The influence of growth conditions on the morphologies of AlN NWs is carefully investigated. Island-like films are found to grow between the NWs due to poor migration ability of Al adatoms. The films are proved to be Al-polar different from the N-polar AlN NWs, which can explain the absence of newly formed NWs. Increasing the V/III ratio can efficiently suppress the growth of Al-polar AlN films.

No MeSH data available.


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SEM images of AlN NWs. a A top-view image of NWs. b A bird’s-eye-view image taken with a 70° angle
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Fig9: SEM images of AlN NWs. a A top-view image of NWs. b A bird’s-eye-view image taken with a 70° angle

Mentions: It can also be observed from the SEM images that, when the V/III ratio changes, the morphologies of the AlN NWs also change. For sample M, the NW density is 1.6 × 109 cm−2; however, by taking the criteria established by Fernández-Garrido et al. [19], the density of distinguishable single NW is only 1 × 108 cm−2, accounting for 6.3 % of the total NWs. Based on the growth conditions of sample M, the Al source temperature was elevated to 1240 °C to grow sample P. The sample presents a NW density of 1.8 × 109 cm−2 as well as a significantly increased density of distinguishable single NW of 3.9 × 108 cm−2, accounting for 21.7 % of the total NWs. Finally, by increasing the aluminization temperature to 950 °C based on the conditions of sample P, sample Q presents a NW density of 1.9 × 109 cm−2 and a density of distinguishable single NW of 6.3 × 108 cm−2, accounting for 33.2 % of the total NWs, as shown in Fig. 9.Fig. 9


MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation.

E Y, Hao Z, Yu J, Wu C, Liu R, Wang L, Xiong B, Wang J, Han Y, Sun C, Luo Y - Nanoscale Res Lett (2015)

SEM images of AlN NWs. a A top-view image of NWs. b A bird’s-eye-view image taken with a 70° angle
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4593981&req=5

Fig9: SEM images of AlN NWs. a A top-view image of NWs. b A bird’s-eye-view image taken with a 70° angle
Mentions: It can also be observed from the SEM images that, when the V/III ratio changes, the morphologies of the AlN NWs also change. For sample M, the NW density is 1.6 × 109 cm−2; however, by taking the criteria established by Fernández-Garrido et al. [19], the density of distinguishable single NW is only 1 × 108 cm−2, accounting for 6.3 % of the total NWs. Based on the growth conditions of sample M, the Al source temperature was elevated to 1240 °C to grow sample P. The sample presents a NW density of 1.8 × 109 cm−2 as well as a significantly increased density of distinguishable single NW of 3.9 × 108 cm−2, accounting for 21.7 % of the total NWs. Finally, by increasing the aluminization temperature to 950 °C based on the conditions of sample P, sample Q presents a NW density of 1.9 × 109 cm−2 and a density of distinguishable single NW of 6.3 × 108 cm−2, accounting for 33.2 % of the total NWs, as shown in Fig. 9.Fig. 9

Bottom Line: The influence of growth conditions on the morphologies of AlN NWs is carefully investigated.Island-like films are found to grow between the NWs due to poor migration ability of Al adatoms.Increasing the V/III ratio can efficiently suppress the growth of Al-polar AlN films.

View Article: PubMed Central - PubMed

Affiliation: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, People's Republic of China. eyx11@mails.tsinghua.edu.cn.

ABSTRACT
By introducing an aluminization process to achieve nucleation of nanowires (NWs), spontaneous growth of AlN NWs on Si substrates has been realized by plasma-assisted molecular beam epitaxy. The AlN NWs are grown from the nuclei formed by the aluminization process, and the NW density and diameter can be controlled by the aluminization parameters. The influence of growth conditions on the morphologies of AlN NWs is carefully investigated. Island-like films are found to grow between the NWs due to poor migration ability of Al adatoms. The films are proved to be Al-polar different from the N-polar AlN NWs, which can explain the absence of newly formed NWs. Increasing the V/III ratio can efficiently suppress the growth of Al-polar AlN films.

No MeSH data available.


Related in: MedlinePlus