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MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation.

E Y, Hao Z, Yu J, Wu C, Liu R, Wang L, Xiong B, Wang J, Han Y, Sun C, Luo Y - Nanoscale Res Lett (2015)

Bottom Line: The influence of growth conditions on the morphologies of AlN NWs is carefully investigated.Island-like films are found to grow between the NWs due to poor migration ability of Al adatoms.Increasing the V/III ratio can efficiently suppress the growth of Al-polar AlN films.

View Article: PubMed Central - PubMed

Affiliation: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, People's Republic of China. eyx11@mails.tsinghua.edu.cn.

ABSTRACT
By introducing an aluminization process to achieve nucleation of nanowires (NWs), spontaneous growth of AlN NWs on Si substrates has been realized by plasma-assisted molecular beam epitaxy. The AlN NWs are grown from the nuclei formed by the aluminization process, and the NW density and diameter can be controlled by the aluminization parameters. The influence of growth conditions on the morphologies of AlN NWs is carefully investigated. Island-like films are found to grow between the NWs due to poor migration ability of Al adatoms. The films are proved to be Al-polar different from the N-polar AlN NWs, which can explain the absence of newly formed NWs. Increasing the V/III ratio can efficiently suppress the growth of Al-polar AlN films.

No MeSH data available.


Related in: MedlinePlus

The NW density, average diameter, and length versus Al flux. Solid lines are guides to the eye
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Fig5: The NW density, average diameter, and length versus Al flux. Solid lines are guides to the eye

Mentions: The influence of Al flux on the morphologies of AlN NWs can be analyzed by comparing samples G, C, and H that were grown using different Al source temperatures while keeping the N2 flow rate constant. The corresponding Al fluxes were measured to be 5.8 × 10−8, 8.1 × 10−8, and 1.1 × 10−7 Torr, respectively. Figure 5 shows that the density, average diameter, and length of AlN NWs increase with the Al flux. The increase of NW diameter and length can be understood straightforwardly since increased Al flux will result in more Al atoms incorporating in both the tops and the sidewalls of NWs. Meanwhile, the possible reason for the increase of the NW density is that a higher Al flux will benefit the thermodynamic transformation of nucleation islands to NWs.Fig. 5


MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation.

E Y, Hao Z, Yu J, Wu C, Liu R, Wang L, Xiong B, Wang J, Han Y, Sun C, Luo Y - Nanoscale Res Lett (2015)

The NW density, average diameter, and length versus Al flux. Solid lines are guides to the eye
© Copyright Policy - OpenAccess
Related In: Results  -  Collection

License
Show All Figures
getmorefigures.php?uid=PMC4593981&req=5

Fig5: The NW density, average diameter, and length versus Al flux. Solid lines are guides to the eye
Mentions: The influence of Al flux on the morphologies of AlN NWs can be analyzed by comparing samples G, C, and H that were grown using different Al source temperatures while keeping the N2 flow rate constant. The corresponding Al fluxes were measured to be 5.8 × 10−8, 8.1 × 10−8, and 1.1 × 10−7 Torr, respectively. Figure 5 shows that the density, average diameter, and length of AlN NWs increase with the Al flux. The increase of NW diameter and length can be understood straightforwardly since increased Al flux will result in more Al atoms incorporating in both the tops and the sidewalls of NWs. Meanwhile, the possible reason for the increase of the NW density is that a higher Al flux will benefit the thermodynamic transformation of nucleation islands to NWs.Fig. 5

Bottom Line: The influence of growth conditions on the morphologies of AlN NWs is carefully investigated.Island-like films are found to grow between the NWs due to poor migration ability of Al adatoms.Increasing the V/III ratio can efficiently suppress the growth of Al-polar AlN films.

View Article: PubMed Central - PubMed

Affiliation: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing, 100084, People's Republic of China. eyx11@mails.tsinghua.edu.cn.

ABSTRACT
By introducing an aluminization process to achieve nucleation of nanowires (NWs), spontaneous growth of AlN NWs on Si substrates has been realized by plasma-assisted molecular beam epitaxy. The AlN NWs are grown from the nuclei formed by the aluminization process, and the NW density and diameter can be controlled by the aluminization parameters. The influence of growth conditions on the morphologies of AlN NWs is carefully investigated. Island-like films are found to grow between the NWs due to poor migration ability of Al adatoms. The films are proved to be Al-polar different from the N-polar AlN NWs, which can explain the absence of newly formed NWs. Increasing the V/III ratio can efficiently suppress the growth of Al-polar AlN films.

No MeSH data available.


Related in: MedlinePlus